Toshiba Semiconductor and Storage TTB1067B,Q(S

Overview

TTB1067B,Q(S) from Toshiba is a silicon PNP epitaxial Darlington transistor optimized for high-current switching and power amplification, featuring h_FE ≥ 2000 (V_CE = −2 V, I_C = −1 A), V_CE(sat) ≤ −1.5 V (I_C = −1 A, I_B = −1 mA), and V_CEO = −80 V - deployed in micromotor drivers, hammer drivers, and industrial relay interfaces.

For engineers reviewing the TTB1067B,Q(S) datasheet, TTB1067B,Q(S) pinout, TTB1067B,Q(S) application, or TTB1067B,Q(S) equivalent, this page delivers verified package mapping (TO-126N), terminal roles, absolute maximum ratings, switching timing (t_r = 0.4 µs, t_f = 0.4 µs), and complementary pairing with TTD1509B.

Technical Context

The TTB1067B,Q(S) implements a monolithic PNP Darlington configuration with integrated base-emitter resistor network enabling high DC current gain and low saturation voltage. Its structure supports robust operation under pulsed collector currents up to −3 A and continuous dissipation of 1.5 W at T_C = 25 °C.

Designed for linear and switching modes, it exhibits f_T = 50 MHz and C_ob = 30 pF (V_CB = −10 V), making it suitable for medium-frequency power control where gain stability and thermal margin are critical - not intended for RF or precision analog signal paths.

Key Specifications

Pinout & Package

Encapsulated in TO-126N (TOSHIBA package code 2-8U1A), a through-hole plastic power package with internal leadframe thermal path. Weight: 0.84 g (typ.). Not electrically isolated - requires external creepage/clearance design per system safety requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Compared with TTD1509B, the TTB1067B,Q(S) provides unidirectional high-gain PNP switching with tighter V_CE(sat); versus MJD127G, it delivers superior gain and lower saturation voltage in TO-126N footprint - favoring space-constrained, efficiency-critical micromotor and solenoid applications.

Availability

TTB1067B,Q(S) is available at Aetrix Electronics and suitable for micromotor drivers, hammer drivers, and relay interface circuits requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.

Supply support for TTB1067B,Q(S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and industrial-grade robustness.

The TTB1067B,Q(S) belongs to Toshiba's bipolar transistor family engineered for high-current, medium-speed switching in automotive, industrial automation, and appliance control systems - prioritizing gain consistency and saturation voltage control over RF or ultra-high-speed operation.

FAQ

What is the maximum continuous collector current for the TTB1067B,Q(S)?

The TTB1067B,Q(S) supports a maximum continuous collector current (I_C) of −2 A at T_C = 25 °C. Derating is required above this temperature - for example, at T_C = 100 °C, the usable I_C drops to approximately −1.2 A. This rating assumes proper heatsinking and adherence to the 150 °C maximum junction temperature limit specified in the datasheet.

Is the TTB1067B,Q(S) RoHS compliant?

Yes, the TTB1067B,Q(S) is RoHS compliant, marked as [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] on the device body. Toshiba confirms compliance with Directive 2011/65/EU, and material declarations are available upon request through authorized Toshiba sales channels.

Does the TTB1067B,Q(S) have an integrated base resistor?

No, the TTB1067B,Q(S) does not include an integrated base resistor. It is a bare Darlington transistor requiring external base current limiting - typically a series resistor sized to deliver −1 mA base current for −1 A collector load under saturation conditions.

What is the safe operating area (SOA) limitation for the TTB1067B,Q(S) in switching applications?

The TTB1067B,Q(S) SOA curve (Figure 7.8) defines maximum simultaneous V_CE and I_C limits under pulsed conditions. At V_CE = −30 V, peak I_C must remain below −1.5 A for 10 ms pulses; for DC operation, the 1.5 W power limit governs - exceeding SOA risks secondary breakdown and permanent failure.

How does the TTB1067B,Q(S) compare to standard PNP transistors in motor driver designs?

The TTB1067B,Q(S) provides h_FE ≥ 2000 - roughly 10× higher than typical discrete PNP transistors - allowing direct drive from microcontrollers without pre-driver stages. Its −1.5 V V_CE(sat) also cuts conduction loss nearly in half versus standard PNP devices with −2.5 V saturation, improving thermal efficiency in compact motor modules.