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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Toshiba Semiconductor and Storage TTC008(Q)

Name: TTC008(Q)
Brand: Toshiba Semiconductor and Storage
SKU: TTC008(Q)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TTC008(Q)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: TTC008(Q).pdf

Description:: TRANS NPN 285V 1.5A PW-MOLD2

Quantity:: RFQ Add To RFQ list

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Inventory:149

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Product details

Overview

TTC008(Q) from Toshiba is a silicon NPN bipolar transistor designed for high-voltage switching applications, featuring V_CEO = 285 V, V_CES = 600 V, h_FE = 100–200 at I_C = 0.3 A, and typ. fall time t_f = 0.1 µs. It is used in high-speed DC-DC converters and switching voltage regulators where robust voltage handling and fast turn-off are critical.

For engineers reviewing the TTC008(Q) datasheet, TTC008(Q) pinout, TTC008(Q) application, or TTC008(Q) equivalent, key selection criteria include its 600 V collector-base breakdown rating, 1.1 W power dissipation in New PW-Mold2 package, and suitability for industrial power conversion circuits requiring reliable high-voltage switching.

Technical Context

The TTC008(Q) employs triple-diffused silicon construction to achieve high V_CES (600 V) and stable h_FE across operating current range. Its static gain is specified at two test points: h_FE(1) ≥ 80 at V_CE = 5 V, I_C = 1 mA and h_FE(2) ≥ 100 at V_CE = 5 V, I_C = 0.3 A.

Dynamic performance is characterized by fast switching: typ. rise time t_r = 0.05 µs and fall time t_f = 0.1 µs under defined test conditions. The device's safe operating area (SOA) is guaranteed up to T_j = 150 °C with pulsed I_C = 3 A capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	285 V - Maximum continuous collector-emitter voltage before breakdown under open-base condition
V_CES	600 V - Collector-emitter voltage with base shorted to emitter, enabling higher blocking in clamped-switching topologies
h_FE	100–200 - DC current gain at I_C = 0.3 A ensures predictable base drive requirements in linear and switching modes
t_f	0.1 µs (typ.) - Fast fall time supports operation above 1 MHz in hard-switched SMPS designs
P_C	1.1 W - Power dissipation limit at T_a = 25 °C defines thermal design margin for PCB layout and heatsinking
T_j max	150 °C - Maximum junction temperature sets derating curve for reliability in sustained high-power operation

Pinout & Package

Package: New PW-Mold2 (TOSHIBA designation: 2-7J2S), surface-mount, 3-pin, 0.36 g typical weight.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased injection; requires current-limited drive to ensure h_FE-based saturation
2	Collector	Main high-voltage current path; connected to primary-side switching node in flyback or forward converters
3	Emitter	Reference terminal for base drive and load return; tied to ground or low-side switch node in common-emitter configuration

Key Features

Feature	Design Value
High V_CES rating	600 V enables use in 400 V DC bus systems with margin for voltage spikes and ringing
Controlled h_FE spread	100–200 range allows consistent base resistor selection across production lots without recalibration
Fast fall time	0.1 µs typ. reduces switching losses during turn-off, improving efficiency in high-frequency converters
Triple-diffused structure	Provides superior ruggedness against secondary breakdown compared to planar NPN transistors

Applications

High-Speed High-Voltage Switching	Switching Voltage Regulators
Use Scenario: Controlling 300–400 V DC bus in industrial motor drives and solid-state relays. IC Role / Device Role / Timing Role: Main switching element in single-ended topologies, driven by isolated gate driver with current-limited base drive. Use Value: 600 V V_CES withstands transient overvoltages during IGBT/MOSFET replacement in legacy designs.	Use Scenario: Primary-side switch in offline AC-DC flyback converters delivering 10–50 W. IC Role / Device Role / Timing Role: High-voltage NPN switch synchronized to PWM controller via optocoupler feedback loop. Use Value: 0.1 µs t_f minimizes dead-time loss and improves regulation at 100–500 kHz switching frequencies.
High-Speed DC-DC Converters	Industrial Power Supplies
Use Scenario: Step-down converter in telecom rectifier modules converting -48 V input to 3.3/5/12 V outputs. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck or quasi-resonant topology with snubberless operation. Use Value: 1.1 W P_C and 150 °C T_j allow compact heatsink-free design at 25 °C ambient with 75% duty cycle.	Use Scenario: Auxiliary power supply for PLC I/O modules requiring 12 V/100 mA isolated output. IC Role / Device Role / Timing Role: Linear regulator pass transistor or switching element in discrete buck-derived architecture. Use Value: Guaranteed SOA up to 3 A pulse current supports inrush limiting and short-circuit foldback protection.

High-Speed High-Voltage Switching

Switching Voltage Regulators

Use Scenario: Controlling 300–400 V DC bus in industrial motor drives and solid-state relays.

IC Role / Device Role / Timing Role: Main switching element in single-ended topologies, driven by isolated gate driver with current-limited base drive.

Use Value: 600 V V_CES withstands transient overvoltages during IGBT/MOSFET replacement in legacy designs.

Use Scenario: Primary-side switch in offline AC-DC flyback converters delivering 10–50 W.

IC Role / Device Role / Timing Role: High-voltage NPN switch synchronized to PWM controller via optocoupler feedback loop.

Use Value: 0.1 µs t_f minimizes dead-time loss and improves regulation at 100–500 kHz switching frequencies.

High-Speed DC-DC Converters

Industrial Power Supplies

Use Scenario: Step-down converter in telecom rectifier modules converting -48 V input to 3.3/5/12 V outputs.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck or quasi-resonant topology with snubberless operation.

Use Value: 1.1 W P_C and 150 °C T_j allow compact heatsink-free design at 25 °C ambient with 75% duty cycle.

Use Scenario: Auxiliary power supply for PLC I/O modules requiring 12 V/100 mA isolated output.

IC Role / Device Role / Timing Role: Linear regulator pass transistor or switching element in discrete buck-derived architecture.

Use Value: Guaranteed SOA up to 3 A pulse current supports inrush limiting and short-circuit foldback protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC5707	V_CEO = 250 V, V_CES = 500 V, h_FE = 80–160, t_f = 0.15 µs	Lower voltage ratings reduce margin in 400 V systems; slower fall time increases switching loss	Acceptable where 50 V headroom is sufficient and frequency ≤ 200 kHz
BU508AF	V_CEO = 1500 V, V_CES = 1500 V, h_FE = 5–25, t_f = 0.5 µs	Higher voltage but much lower h_FE and slower switching; requires larger base drive and heatsinking	Suitable only when extreme voltage isolation is required and speed is secondary

Compared with 2SC5707 and BU508AF, the TTC008(Q) delivers optimal balance of 600 V blocking, 100–200 h_FE, and 0.1 µs t_f, making it preferred for 100–500 kHz industrial SMPS where both voltage margin and switching efficiency matter.

Availability

TTC008(Q) is available at Aetrix Electronics and suitable for high-voltage switching, DC-DC conversion, and industrial power supply applications requiring stable component supply and long-term manufacturability.

Supply support for TTC008(Q) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability and industrial-grade performance.

The TTC008(Q) belongs to Toshiba's high-voltage bipolar transistor product line, engineered specifically for robust switching in offline power supplies and industrial DC-DC converters operating up to 400 V DC bus.

FAQ

What is the maximum continuous collector-emitter voltage rating for TTC008(Q)?

The TTC008(Q) has a maximum continuous collector-emitter voltage rating of V_CEO = 285 V under open-base conditions. This rating is confirmed in the Absolute Maximum Ratings table and applies at T_a = 25 °C with derating above that ambient temperature. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Does TTC008(Q) support high-frequency switching applications?

Yes, the TTC008(Q) supports high-frequency switching with a typical fall time t_f of 0.1 µs and rise time t_r of 0.05 µs. These values enable reliable operation up to 500 kHz in hard-switched topologies. Its triple-diffused structure also enhances secondary breakdown immunity, critical for repetitive high-dV/dt stress in such applications.

What package type is used for TTC008(Q)?

The TTC008(Q) uses the New PW-Mold2 package, designated by Toshiba as 2-7J2S. It is a surface-mount, 3-pin molded plastic package weighing 0.36 g (typical). Pin 1 is Base, Pin 2 is Collector, and Pin 3 is Emitter - verified in the "Packaging and Internal Circuit" section of the official datasheet.

How does the DC current gain (h_FE) of TTC008(Q) vary with collector current?

The TTC008(Q) specifies h_FE = 100–200 at I_C = 0.3 A and V_CE = 5 V. At lower I_C = 1 mA, h_FE is ≥ 80. This gain profile ensures stable base drive design across operating ranges. The h_FE variation is documented in Figure 7.2 (h_FE vs. I_C) of the datasheet, showing monotonic decrease above 0.5 A.

Is TTC008(Q) RoHS compliant?

Yes, the TTC008(Q) is RoHS compliant. Per the marking note in the datasheet, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. Toshiba confirms environmental compliance per Directive 2011/65/EU, and RoHS documentation is available through authorized Toshiba sales representatives.

TTC008(Q) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 285 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 62.5mA, 500mA

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 80 @ 1mA, 5V

Power - Max:: 1.1 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PW-MOLD2

TTC008(Q) FAQ

1.How can I place an order for TTC008(Q) through Aetrix?

Please submit a Request for Quotation (RFQ) for TTC008(Q) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TTC008(Q) reliable?

The price and inventory of TTC008(Q) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TTC008(Q) is usually 5 days.

3.What payment methods are accepted for TTC008(Q)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TTC008(Q) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TTC008(Q)?

TTC008(Q) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TTC008(Q) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TTC008(Q)?

For technical support, including TTC008(Q) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TTC008(Q) requirements.

6.How does Aetrix verify that TTC008(Q) is sourced from the original manufacturer or authorized distributors?

All TTC008(Q) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TTC008(Q) meets industry standards.

7.What is the process for return or replacement of TTC008(Q)?

All TTC008(Q) units undergo pre-shipment inspection (PSI). If there is an issue with TTC008(Q), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TTC008(Q) part is unused and in its original packaging.

Return procedure for TTC008(Q):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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