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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Toshiba Semiconductor and Storage TTC1949-Y,LF

Name: TTC1949-Y,LF
Brand: Toshiba Semiconductor and Storage
SKU: TTC1949-Y,LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TTC1949-Y,LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: TTC1949-Y,LF.pdf

Description:: TRANS NPN 50V 0.5A S-MINI

Quantity:: RFQ Add To RFQ list

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Inventory:11,995

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Product details

Overview

TTC1949-Y,LF from Toshiba Electronic Devices & Storage Corporation is a silicon NPN epitaxial bipolar transistor designed for low-frequency power amplification. It features V_CEO = 50 V, I_C = 500 mA, P_C = 200 mW, h_FE (Y rank) = 120–270, and f_T = 100 MHz typical, operating in S-Mini package with 1–2–3 pinout (Base–Emitter–Collector). It is used in audio preamplifier stages and DC motor drive interfaces.

For engineers reviewing the TTC1949-Y,LF datasheet, TTC1949-Y,LF pinout, TTC1949-Y,LF application, or TTC1949-Y,LF equivalent, key selection criteria include its Y-rank h_FE tolerance, low V_CE(sat) of 0.4 V at I_C = 500 mA/ I_B = 50 mA, thermal derating on FR4 boards, and suitability for linear amplification below 100 MHz.

Technical Context

The TTC1949-Y,LF operates as a general-purpose NPN switching and amplification device with fixed emitter-base junction geometry optimized for stable h_FE across I_C = 100–500 mA. Its f_T = 100 MHz (typ.) and C_ob = 3 pF (typ.) support bandwidth-limited analog gain up to ~10 MHz in common-emitter configurations.

Thermal performance is defined for mounting on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 0.42 mm² Cu pads per terminal. Junction-to-ambient thermal resistance is derived from P_C = 200 mW at T_a = 25 °C and T_j(max) = 150 °C, enabling operation up to +100 °C ambient with appropriate derating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum collector-emitter voltage before breakdown under open-base conditions; sets safe rail limit for Class-A amplifier supply.
I_C	500 mA - Continuous collector current rating; supports medium-power output stages without forced cooling.
P_C	200 mW - Total package power dissipation at T_a = 25 °C; requires thermal derating above 25 °C ambient.
h_FE (Y rank)	120–270 - DC current gain range at V_CE = 1 V, I_C = 100 mA; enables predictable biasing in fixed-gain amplifier designs.
V_CE(sat)	0.4 V max at I_C = 500 mA / I_B = 50 mA - Low saturation voltage reduces conduction loss in switching applications.
f_T	100 MHz typ. - Transition frequency at V_CE = 5 V, I_C = 10 mA; confirms usable gain up to audio and low-RF frequencies.

Pinout & Package

S-Mini package: surface-mount plastic case (JEDEC TO-236 compatible), 3-terminal, 12 mg typical weight, footprint optimized for high-density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input for forward-biased junction; requires current-limiting resistor to set I_B for desired I_C.
2	Emitter	Common reference node in common-emitter configuration; connected to ground or low-impedance return path.
3	Collector	Output terminal carrying amplified I_C; connects to load or next stage with appropriate supply decoupling.

Key Features

Feature	Design Value
Y-rank h_FE binning	Guaranteed 120–270 gain range enables consistent DC bias point setting without individual trimming.
Low V_CE(sat)	0.4 V maximum ensures <100 mW conduction loss at full 500 mA load, improving efficiency in driver circuits.
High f_T	100 MHz typical supports stable small-signal gain up to 10 MHz, suitable for wideband audio and signal conditioning.
FR4-optimized thermal design	Rated P_C defined on standard 25.4 mm × 25.4 mm FR4 board, simplifying thermal validation for industrial PCBs.

Applications

Audio Preamp Stage	DC Motor Driver Interface
Use Scenario: Amplifying line-level signals (≤1 V_pp) before power-stage buffering in portable audio equipment. IC Role / Device Role / Timing Role: NPN common-emitter voltage amplifier with fixed bias network and emitter degeneration. Use Value: Stable 120–270 h_FE ensures repeatable gain (≈40–60 dB) across production units without calibration.	Use Scenario: Switching 24 V / 300 mA brushed DC motors in industrial actuators using PWM at ≤20 kHz. IC Role / Device Role / Timing Role: Low-side switch with base-driven saturation control and flyback diode protection. Use Value: 0.4 V V_CE(sat) limits power loss to <120 mW during on-state, reducing thermal stress in enclosed housings.
LED Constant-Current Sink	Signal-Level Shifter
Use Scenario: Driving high-brightness white LEDs (3.2 V, 350 mA) from 5 V logic-controlled supplies in signage systems. IC Role / Device Role / Timing Role: Linear current sink with emitter resistor feedback and base voltage reference. Use Value: Tight h_FE binning allows ±5% LED current accuracy with 1% emitter resistor, eliminating need for op-amp feedback.	Use Scenario: Level-shifting 3.3 V microcontroller GPIO outputs to interface with 5 V peripheral logic inputs. IC Role / Device Role / Timing Role: Digital switch configured in common-emitter inverter topology with pull-up resistor. Use Value: 100 MHz f_T supports clean edge transitions up to 10 MHz, preserving timing integrity in synchronous digital links.

Audio Preamp Stage

DC Motor Driver Interface

Use Scenario: Amplifying line-level signals (≤1 V_pp) before power-stage buffering in portable audio equipment.

IC Role / Device Role / Timing Role: NPN common-emitter voltage amplifier with fixed bias network and emitter degeneration.

Use Value: Stable 120–270 h_FE ensures repeatable gain (≈40–60 dB) across production units without calibration.

Use Scenario: Switching 24 V / 300 mA brushed DC motors in industrial actuators using PWM at ≤20 kHz.

IC Role / Device Role / Timing Role: Low-side switch with base-driven saturation control and flyback diode protection.

Use Value: 0.4 V V_CE(sat) limits power loss to <120 mW during on-state, reducing thermal stress in enclosed housings.

LED Constant-Current Sink

Signal-Level Shifter

Use Scenario: Driving high-brightness white LEDs (3.2 V, 350 mA) from 5 V logic-controlled supplies in signage systems.

IC Role / Device Role / Timing Role: Linear current sink with emitter resistor feedback and base voltage reference.

Use Value: Tight h_FE binning allows ±5% LED current accuracy with 1% emitter resistor, eliminating need for op-amp feedback.

Use Scenario: Level-shifting 3.3 V microcontroller GPIO outputs to interface with 5 V peripheral logic inputs.

IC Role / Device Role / Timing Role: Digital switch configured in common-emitter inverter topology with pull-up resistor.

Use Value: 100 MHz f_T supports clean edge transitions up to 10 MHz, preserving timing integrity in synchronous digital links.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC4738-Y,LF	V_CEO = 60 V, I_C = 150 mA, h_FE = 120–270, S-Mini package	Lower I_C rating limits use to signal-level switching only; unsuitable for 500 mA loads.	Select when higher V_CEO margin is required but load current remains ≤150 mA.
BC847B,LF	V_CEO = 45 V, I_C = 100 mA, h_FE = 200–450, SOT-23 package	Smaller package and lower P_C (250 mW derated); not rated for continuous 500 mA operation.	Choose for space-constrained low-current signal paths where gain consistency is critical but power handling is secondary.

Compared with TTC1949-Y,LF, the 2SC4738-Y,LF offers higher voltage headroom but reduced current capacity, while BC847B,LF provides tighter h_FE spread in a smaller footprint but cannot sustain 500 mA continuously-making TTC1949-Y,LF uniquely balanced for medium-power linear and switching roles in compact S-Mini form.

Availability

TTC1949-Y,LF is available at Aetrix Electronics and suitable for audio preamplifiers, DC motor drivers, LED constant-current sinks, and logic-level shifters requiring stable component supply and consistent Y-rank h_FE performance.

Supply support for TTC1949-Y,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power electronics, and storage solutions, with global distribution and automotive-grade reliability standards.

The TTC1949-Y,LF belongs to Toshiba's general-purpose bipolar transistor product line, engineered for cost-effective, thermally robust amplification and switching in industrial and consumer equipment operating below 100 MHz.

FAQ

What is the h_FE range guaranteed for TTC1949-Y,LF?

The TTC1949-Y,LF is Y-rank binned with a guaranteed DC current gain (h_FE) range of 120 to 270 at V_CE = 1 V and I_C = 100 mA. This binning is explicitly defined in Toshiba's datasheet Rev. 1.0.A and applies to every unit marked "Y" on the device top. The TTC1949-Y,LF does not meet GR-rank (180–390) specifications.

Can TTC1949-Y,LF be used in switching applications at 20 kHz PWM?

Yes, the TTC1949-Y,LF supports 20 kHz PWM switching due to its 100 MHz f_T and low V_CE(sat) of 0.4 V max at I_C = 500 mA / I_B = 50 mA. For reliable operation, ensure base drive delivers ≥50 mA peak and include a flyback diode across inductive loads. The TTC1949-Y,LF thermal limits must be observed with appropriate PCB copper area.

What is the maximum allowable ambient temperature for continuous 500 mA operation of TTC1949-Y,LF?

At I_C = 500 mA and V_CE(sat) ≈ 0.4 V, power dissipation is ~200 mW. With P_C = 200 mW rated at T_a = 25 °C and T_j(max) = 150 °C, the maximum ambient temperature for continuous operation is ~100 °C when mounted per the specified FR4 test board. Derating is required above 25 °C per the datasheet's P_C vs. T_a curve. The TTC1949-Y,LF must not exceed this limit to avoid junction overheating.

Is TTC1949-Y,LF RoHS compliant and lead-free?

Yes, TTC1949-Y,LF is RoHS compliant and lead-free, as confirmed by Toshiba's environmental documentation and marking "LF" suffix (Lead-Free). It meets EU RoHS Directive 2011/65/EU requirements, including restrictions on Pb, Cd, Hg, Cr(VI), PBB, and PBDE. The "LF" in TTC1949-Y,LF explicitly denotes lead-free termination and packaging.

What is the pin configuration of TTC1949-Y,LF in the S-Mini package?

The TTC1949-Y,LF uses a standardized 3-pin S-Mini (JEDEC TO-236) package with pin 1 = Base, pin 2 = Emitter, pin 3 = Collector - verified from Toshiba's official package drawing and internal circuit diagram. This configuration is consistent across all TTC1949 variants and matches industry-standard SOT-23 orientation when viewed from top with marking side up and pin 1 in the bottom-left corner.

TTC1949-Y,LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 100mA, 1V

Power - Max:: 200 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: S-Mini

TTC1949-Y,LF FAQ

1.How can I place an order for TTC1949-Y,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for TTC1949-Y,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TTC1949-Y,LF reliable?

The price and inventory of TTC1949-Y,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TTC1949-Y,LF is usually 5 days.

3.What payment methods are accepted for TTC1949-Y,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TTC1949-Y,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TTC1949-Y,LF?

TTC1949-Y,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TTC1949-Y,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TTC1949-Y,LF?

For technical support, including TTC1949-Y,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TTC1949-Y,LF requirements.

6.How does Aetrix verify that TTC1949-Y,LF is sourced from the original manufacturer or authorized distributors?

All TTC1949-Y,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TTC1949-Y,LF meets industry standards.

7.What is the process for return or replacement of TTC1949-Y,LF?

All TTC1949-Y,LF units undergo pre-shipment inspection (PSI). If there is an issue with TTC1949-Y,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TTC1949-Y,LF part is unused and in its original packaging.

Return procedure for TTC1949-Y,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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