Toshiba Semiconductor and Storage TTC5460B,Q(S

Overview

TTC5460B,Q(S) from Toshiba is a silicon NPN bipolar transistor designed for high-voltage switching and amplification in CRT display focus circuits, featuring V_CEO = 800 V, I_C = 50 mA DC, h_FE ≥ 15 at 7 mA, V_CE(sat) ≤ 1 V at 20 mA/4 mA, and TO-126N package with emitter-collector-base pinout.

For engineers reviewing the TTC5460B,Q(S) datasheet, TTC5460B,Q(S) pinout, TTC5460B,Q(S) application, or TTC5460B,Q(S) equivalent, key selection criteria include high-voltage blocking capability (800 V), safe operating area for dynamic focus pulse handling, thermal derating guidance per Toshiba Reliability Handbook, and RoHS-compliant marking per EU Directive 2011/65/EU.

Technical Context

The TTC5460B,Q(S) employs triple-diffused silicon NPN construction optimized for stable gain and low saturation voltage under high-V_CE stress. Its static characteristics are specified at T_a = 25 °C with guaranteed h_FE ≥ 15 and V_CE(sat) ≤ 1 V at I_C = 20 mA / I_B = 4 mA.

Dynamic performance includes f_T = 5.5 MHz typical and C_ob = 2.2 pF at V_CB = 100 V, supporting moderate-speed switching in analog video focus control and HV amplifier stages where junction temperature must remain ≤150 °C.

Key Specifications

Pinout & Package

Package: TO-126N (Toshiba designation 2-8U1A), epoxy-molded, non-isolated, 0.84 g typical weight. Not rated for electrical isolation - external creepage/clearance design required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Compared with 2SC5460 and BU508A, the TTC5460B,Q(S) delivers optimal balance of 800 V rating, controlled h_FE, and TO-126N form factor for CRT dynamic focus - whereas 2SC5460 lacks RoHS compliance and BU508A introduces layout and drive compatibility challenges.

Availability

TTC5460B,Q(S) is available at Aetrix Electronics and suitable for CRT display repair, high-voltage test equipment, and legacy analog amplifier designs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for TTC5460B,Q(S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and industrial-grade robustness.

The TTC5460B,Q(S) belongs to Toshiba's high-voltage bipolar transistor product line, engineered specifically for CRT dynamic focus, HV switching, and linear amplifier applications demanding 800 V blocking and stable gain at elevated voltages.

FAQ

What is the maximum junction temperature specification for the TTC5460B,Q(S)?

The TTC5460B,Q(S) has a maximum junction temperature (T_j) of 150 °C, as defined in its Absolute Maximum Ratings table. Operation must ensure T_j does not exceed this limit - derating is required above T_a = 25 °C per Toshiba's Reliability Handbook guidelines. Thermal design for the TTC5460B,Q(S) must account for P_C = 1.5 W at T_c = 25 °C and safe operating area constraints.

Is the TTC5460B,Q(S) RoHS compliant?

Yes, the TTC5460B,Q(S) is RoHS compliant, indicated by the [[G]]/RoHS [[Pb]] marking on the device body per EU Directive 2011/65/EU. Toshiba confirms compliance for lead-free soldering processes and restricted substance limits. Full environmental documentation is available through authorized Toshiba sales representatives - no exemptions apply to the TTC5460B,Q(S) standard production version.

Does the TTC5460B,Q(S) provide electrical isolation between collector and mounting surface?

No, the TTC5460B,Q(S) uses epoxy-molded TO-126N packaging without internal isolation. The datasheet explicitly states it "does not provide any guarantee to the maximum isolation voltage." Designers must maintain external creepage and clearance distances per system safety standards - the collector terminal is electrically connected to the metal tab, which serves as the thermal path, not an isolated interface.

What is the guaranteed DC current gain (h_FE) range for the TTC5460B,Q(S) under standard test conditions?

The TTC5460B,Q(S) guarantees h_FE ≥ 15 when tested at V_CE = 5 V and I_C = 7 mA, with no upper limit specified. Typical values fall within 25–60 range per characterization curves, but design margins must be based on the minimum guaranteed value. This h_FE specification ensures consistent base drive sizing across production lots for dynamic focus and HV amplifier applications.

Can the TTC5460B,Q(S) replace the 2SC5460 in existing designs?

Yes, the TTC5460B,Q(S) is the direct RoHS-compliant successor to the 2SC5460, sharing identical electrical specifications, pinout, package (TO-126N), and thermal characteristics. No PCB or schematic changes are needed - only compliance documentation and sourcing updates. Toshiba introduced TTC5460B,Q(S) in February 2014 to replace 2SC5460 in new production while maintaining full functional and mechanical equivalence.