Texas Instruments TX810IRHHR

Overview

TX810IRHHR from Texas Instruments is an 8-channel, current-programmable transmit/receive (T/R) switch optimized for medical and industrial ultrasound systems. It features programmable bias current (0–7 mA per channel), ±5 V dual supply operation, <1 µs wake-up from power-down mode, and integrated high-voltage Schottky diode clamping to limit output to ±2 V_PP. It isolates low-noise receiver amplifiers from high-voltage transmitter pulses in phased-array transducer interfaces.

For engineers reviewing the TX810IRHHR datasheet, TX810IRHHR pinout, TX810IRHHR application, or TX810IRHHR equivalent, key selection criteria include insertion loss vs. bias setting (-4.1 dB typical at 7 mA), channel-to-channel IL matching (0.06 dB), recovery time (<1 µs), and thermal performance in the 6 mm × 6 mm PQFN package with exposed thermal pad.

Technical Context

The TX810IRHHR implements a diode-bridge-based T/R architecture with back-to-back clamp diodes and a 3-bit programmable bias network controlling seven MOSFET switches. Its internal level-shifting logic accepts 2.5–5 V digital inputs (B1–B3) to set one of eight discrete bias currents (0–7 mA), directly tuning trade-offs among insertion loss, input-referred noise (0.91–1.12 nV/√Hz), on-resistance (30–67 Ω), and per-channel power (10–70 mW).

It operates with independent ±5 V analog supplies (VP = +5 V, VN = −5 V), VB = 0 V reference, and VD = 2.5–5 V logic supply. The substrate voltage (V_SUB) is tied to VN (−5 V), and all 36-pin PQFN thermal management relies on soldering the exposed PowerPAD™ to PCB ground for junction-to-board thermal resistance of 7.2 °C/W.

Key Specifications

Pinout & Package

The TX810IRHHR is housed in a 36-pin PQFN (RHH) package measuring 6 mm × 6 mm with 0.5 mm pitch and an exposed thermal pad (PowerPAD™) requiring solder connection to PCB ground for thermal and mechanical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar T/R switch applications.

Compared with MAX14827AETM+ and ADG1414BRUZ, the TX810IRHHR uniquely integrates HV diode clamping, 3-bit bias programmability, and sub-µs wake-up-enabling direct replacement of discrete T/R solutions in space-constrained ultrasound front-ends without compromising dynamic range or power efficiency.

Availability

TX810IRHHR is available at Aetrix Electronics and suitable for medical ultrasound imaging, industrial NDT scanning, portable handheld scanners, and ultrasound beamforming systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TX810IRHHR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and high-reliability ICs for industrial, automotive, and medical applications.

The TX810IRHHR belongs to TI's ultrasound analog front-end (AFE) portfolio, designed specifically to replace discrete HV T/R switch implementations with integrated, programmable, and thermally robust solutions for phased-array transducer interfaces.

FAQ

What is the maximum input voltage the TX810IRHHR can handle on its INn pins?

The TX810IRHHR supports ±100 V AC input on each INn pin, as specified in Absolute Maximum Ratings. Its internal Schottky diode bridge and clamp structure limit the output voltage to ±1.4–1.9 V_PP depending on bias setting, protecting downstream low-noise amplifiers from damage during transmit bursts. This rating applies under continuous operation with proper decoupling and thermal management.

How does the 3-bit bias programming (B1–B3) affect insertion loss and power consumption in the TX810IRHHR?

In the TX810IRHHR, B1–B3 select one of eight bias current levels (0–7 mA). At 7 mA (B3B2B1 = 111), insertion loss is minimized (−4.1 dB typical), but power per channel rises to 70 mW. At 1 mA (001), insertion loss increases to −7 dB and power drops to 10 mW. This trade-off allows system designers to dynamically optimize SNR versus power budget per imaging frame.

Can the TX810IRHHR operate with supply voltages other than ±5 V?

The TX810IRHHR is specified for VP = +5 V and VN = −5 V, with VB = 0 V. While Absolute Maximum Ratings allow VP/VN from −0.3 V to +6 V and −6 V to +0.3 V respectively, TI's characterization, timing, and performance data (including insertion loss, noise, and recovery) are validated only at ±5 V. Operation outside this range may degrade specifications and is not recommended for production ultrasound systems.

What is the role of the V_SUB pin on the TX810IRHHR, and how should it be connected?

The V_SUB pin on the TX810IRHHR connects to the silicon substrate and must be tied to VN (−5 V) as specified in the datasheet. This bias ensures proper operation of the internal high-voltage diode bridge and maintains ESD robustness. Leaving V_SUB unconnected or misbiased risks latch-up, increased leakage, or permanent device failure under HV stress.

Is the TX810IRHHR pin-compatible with other members of the TX810 family, such as TX810IRHHT?

Yes, the TX810IRHHR and TX810IRHHT share identical 36-pin PQFN (RHH) packaging, pinout, electrical specifications, and thermal characteristics. The only difference is tape-and-reel quantity: TX810IRHHR ships in 2500-unit reels, while TX810IRHHT ships in 250-unit reels. Both are functionally and mechanically interchangeable in PCB layouts and system designs.