Texas Instruments TXB0101DCKT

Overview

TXB0101DCKT from Texas Instruments is a 1-bit bidirectional voltage translator with auto direction-sensing, supporting 1.2V–3.6V on A port and 1.65V–5.5V on B port (VCCA ≤ VCCB), ±15 kV HBM ESD protection on B port, and 5 µA max ICC. It enables level-shifting between low-voltage logic domains in space-constrained mobile interfaces.

For engineers reviewing the TXB0101DCKT datasheet, TXB0101DCKT pinout, TXB0101DCKT application, or TXB0101DCKT equivalent, key selection criteria include VCCA/VCCB voltage compatibility, auto-direction operation without control signals, Ioff partial-power-down support, SC70-6 package footprint, and high-impedance state behavior during power sequencing.

Technical Context

The TXB0101DCKT implements edge-accelerated buffered translation using one-shot circuits to enhance rise/fall times-PMOS for low-to-high and NMOS for high-to-low transitions-achieving up to 100 Mbps data rate at 3.3V/5V conditions. Its architecture eliminates need for external direction control by dynamically overdriving weak output drivers during signal transitions.

VCCA-referenced OE input controls 3-state operation; VCC isolation ensures all outputs enter high-impedance when either supply drops to GND. The device supports push-pull CMOS only-not open-drain protocols like I²C-and requires external pull resistors >50 kΩ if used on terminated lines.

Key Specifications

Pinout & Package

TXB0101DCKT uses the SC70-6 (DCK) package: 2.00 mm × 1.25 mm body, 0.65 mm pitch, 6-pin surface-mount outline optimized for high-density PCB layouts in mobile applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional level-shifting applications.

Compared with TXS0101DCKT and SN74AVC1T45DBVR, TXB0101DCKT uniquely combines auto-direction sensing, VCC isolation, ±15 kV B-port ESD, and asymmetric voltage support-making it optimal for high-integrity, high-speed, space-constrained mobile SoC interconnects where direction changes frequently and power sequencing is non-deterministic.

Availability

TXB0101DCKT is available at Aetrix Electronics and suitable for smartphone baseband interfaces, tablet USB OTG data paths, desktop SMBus sensor links, and handset sensor hub interconnects requiring stable component supply across high-volume consumer electronics production.

Supply support for TXB0101DCKT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and personal electronics markets.

The TXB0101DCKT belongs to TI's voltage translation portfolio, engineered specifically for low-voltage, high-density, bidirectional logic-level bridging in portable and battery-powered systems where space, power, and ESD robustness are critical.

FAQ

What voltage combinations are supported by the TXB0101DCKT?

The TXB0101DCKT supports A-port voltages from 1.2V to 3.6V and B-port voltages from 1.65V to 5.5V, with the strict requirement that VCCA ≤ VCCB. Valid combinations include 1.8V A ↔ 3.3V B, 1.2V A ↔ 1.8V B, and 3.3V A ↔ 5V B. It does not support VCCA > VCCB or open-drain protocols like I²C. The TXB0101DCKT datasheet specifies absolute maximum ratings and recommended operating conditions for each pair.

Does the TXB0101DCKT require an external direction-control signal?

No, the TXB0101DCKT features auto direction-sensing and requires no external DIR pin or GPIO control. Its internal one-shot circuitry detects signal edges on either A or B port and dynamically enables the appropriate driver-enabling seamless bidirectional data flow. This eliminates timing-critical direction handshaking and reduces MCU pin usage. The TXB0101DCKT is designed exclusively for push-pull CMOS interfaces, not open-drain buses.

How does the TXB0101DCKT behave during power-up or power-down sequencing?

The TXB0101DCKT includes VCC isolation: if either VCCA or VCCB drops to GND, all outputs automatically enter high-impedance state-preventing bus contention and backdrive damage. During power-up, VCCA may ramp before or after VCCB without risk. For guaranteed Hi-Z at startup, OE must be tied to GND via a pulldown resistor. This behavior is intrinsic to the TXB0101DCKT architecture and documented in Section 6.3.2 of its datasheet.

What is the maximum data rate achievable with the TXB0101DCKT?

The TXB0101DCKT achieves up to 100 Mbps under recommended conditions: VCCA = 2.5V or 3.3V and VCCB = 3.3V or 5V. At lower voltages-e.g., VCCA = 1.2V-the max rate drops to 20 Mbps. Propagation delay ranges from 0.8 ns (3.3V/5V) to 6.9 ns (1.2V/1.8V). These values are measured per JEDEC standards and confirmed across SC70-6 packaged TXB0101DCKT units in production characterization.

Can the TXB0101DCKT be used for I²C level shifting?

No, the TXB0101DCKT is not suitable for I²C or other open-drain buses. Its push-pull output architecture cannot emulate the wired-AND behavior required by I²C, and external pullup resistors <50 kΩ will conflict with its weak drivers. For I²C, TI recommends the TXS0101DCKT-a purpose-built open-drain translator with internal pullups. Using TXB0101DCKT on I²C lines risks bus lockup, signal corruption, and failure to meet I²C timing specs.