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Texas Instruments TXS4555RGTR
- Part No.:
- TXS4555RGTR
- Manufacturer:
- Texas Instruments
- Category:
- Translators, Level Shifters
- Package:
- Datasheet:
-
TXS4555RGTR.pdf
- Description:
- IC TRANSLTR BIDIRECTIONAL 16VQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,001
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Product details
Overview
TXS4555RGTR from Texas Instruments is a SIM card power supply and bidirectional level translator IC for mobile baseband-to-SIM interfacing. It integrates a 50mA LDO with selectable 1.8V/2.95V output, supports ISO/IEC 7816-3 shutdown sequencing, delivers ≤100mV dropout at 50mA, and provides 8kV HBM ESD protection on SIM pins - deployed in GSM/3G handhelds requiring dual-voltage SIM support.
For engineers reviewing the TXS4555RGTR datasheet, TXS4555RGTR pinout, TXS4555RGTR application, or TXS4555RGTR equivalent, key selection criteria include LDO output voltage selectability (SEL pin), SIM-side ESD robustness, ISO 7816-3 compliant shutdown timing, VQFN-16 thermal pad grounding requirement, and simultaneous A-port (1.65–3.3V) / B-port (2.3–5.5V) supply compatibility.
Technical Context
The TXS4555RGTR implements two tightly coupled functional blocks: a PMOS-based low-dropout regulator with fixed 1.8V/2.95V outputs controlled by SEL, and a bidirectional MOSFET-based level translator supporting voltage translation between VCC (1.65–3.3V) and VSIM (1.8V or 2.95V). Both blocks share EN-controlled shutdown with defined ISO 7816-3 sequence: SIM_RST deactivates first, followed by SIM_CLK, SIM_I/O, and VSIM.
Its architecture enables direct interface between low-voltage baseband processors and legacy or modern SIM cards without external voltage translation or discrete LDOs. The device operates across –40°C to +85°C ambient, maintains PSRR ≥40dB at 10kHz, and uses internal 2kΩ pull-downs on SIM pins during shutdown to prevent data corruption during hot-swap or accidental power loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| LDO Output Voltage | Selectable 1.8V (Class-C) or 2.95V (Class-B) via SEL pin - matches GSM/3G SIM voltage classes |
| Max Output Current | 50mA continuous - sufficient to power SIM card I/O, CLK, RST, and VSIM simultaneously |
| Dropout Voltage | ≤100mV at 50mA - enables stable regulation even with VBATT as low as 2.3V |
| ESD Protection (SIM pins) | 8kV HBM - exceeds ISO/IEC 7816-3 requirements for SIM card interface reliability |
| Level Translation Range | VCC: 1.65–3.3V ↔ VSIM: 1.8V/2.95V - supports 1.8V microprocessor cores interfacing with 2.95V SIMs |
| Shutdown Sequence | ISO 7816-3 compliant - ensures safe, ordered deactivation of SIM_RST → SIM_CLK → SIM_I/O → VSIM |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade mobile handset environments |
Pinout & Package
TXS4555RGTR is housed in a 3mm × 3mm, 16-pin VQFN (RGT) package with exposed thermal pad requiring PCB ground connection for thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| EN (Pin 1) | Enable control input | Pull low to disable LDO and place all SIM-side outputs in Hi-Z - initiates ISO 7816-3 shutdown sequence |
| SEL (Pin 2) | Voltage select input | Low = 1.8V VSIM output; High = 2.95V VSIM output - sets SIM operating class |
| VCC (Pin 3) | A-port power supply | Supplies baseband-side logic (CLK, RST, I/O, EN, SEL); range 1.65–3.3V |
| VBATT (Pin 5) | LDO input supply | Accepts battery input 2.3–5.5V - powers internal LDO generating VSIM |
| VSIM (Pin 7) | SIM card power output | Regulated 1.8V or 2.95V output - directly powers SIM card VCC pin |
| SIM_RST (Pin 9) | SIM reset output | Drives SIM RESET pin - actively driven high/low during operation; pulled low during shutdown |
| SIM_CLK (Pin 11) | SIM clock output | Drives SIM CLK pin - supports up to 25MHz clock frequency per ISO 7816 |
| SIM_I/O (Pin 8) | SIM bidirectional data | Translates I/O signals between baseband and SIM - includes internal 14kΩ pull-up and 3kΩ active pull-down |
| GND (Pin 10) | Ground reference | Common return path for LDO, translator, and digital logic - must connect to exposed thermal pad |
| CLK (Pin 13) | Baseband clock input | Receives clock signal from baseband processor - translated to SIM_CLK output |
| RST (Pin 14) | Baseband reset input | Receives reset signal from baseband - translated to SIM_RST output |
| I/O (Pin 15) | Baseband I/O bidirectional | Receives/transmits data from baseband - translated to SIM_I/O output |
Key Features
| Feature | Design Value |
|---|---|
| ISO 7816-3 Shutdown Sequencing | Guarantees safe, timed deactivation order (SIM_RST → SIM_CLK → SIM_I/O → VSIM) to prevent SIM data corruption during power loss |
| 8kV HBM ESD on SIM Pins | Enables robust field operation in consumer handsets without external TVS diodes on SIM interface lines |
| Sub-100mV Dropout at 50mA | Maintains regulation down to VBATT = 2.3V, extending usable battery life in Li-ion-powered devices |
| Integrated Pull-Up/Pull-Down Networks | Provides 14kΩ SIM_I/O pull-up and active 3kΩ pull-down during shutdown - eliminates need for external resistors |
| Thermal Protection | Auto-shutdown at ~160°C junction temperature with hysteresis (~20°C) - prevents permanent damage under sustained overload |
Applications
| GSM Mobile Handset | 3G Smart Card Terminal |
|---|---|
Use Scenario: Baseband processor (1.8V core) interfaces with legacy 2.95V SIM card in dual-mode GSM handset. IC Role / Device Role / Timing Role: TXS4555RGTR acts as voltage translator and dedicated SIM power source - translates CLK/RST/I/O levels and supplies regulated 2.95V to SIM VCC. Use Value: Eliminates need for separate LDO and level shifter ICs, reducing BOM count and PCB area while ensuring ISO 7816-3 compliance. | Use Scenario: Portable 3G payment terminal requires hot-swappable SIM support with guaranteed data integrity during insertion/removal. IC Role / Device Role / Timing Role: TXS4555RGTR manages SIM power and signal sequencing - activates VSIM only after stable CLK/RST/I/O initialization and shuts down in strict ISO-defined order. Use Value: Prevents SIM memory corruption during hot-swap events via hardware-enforced shutdown timing, avoiding firmware-level workarounds. |
| eSIM-Enabled Tablet | Industrial M2M Module |
Use Scenario: Tablet with embedded SIM (eSIM) uses 1.8V application processor but must retain backward compatibility with removable 2.95V SIM slots. IC Role / Device Role / Timing Role: TXS4555RGTR serves as configurable SIM interface - SEL pin dynamically selects 1.8V or 2.95V VSIM based on detected SIM type. Use Value: Enables single-hardware design supporting both eSIM and physical SIM variants, simplifying inventory and certification. | Use Scenario: Ruggedized M2M module operates in extended temperature (-40°C to +85°C) with SIM-based authentication in remote telemetry applications. IC Role / Device Role / Timing Role: TXS4555RGTR provides temperature-stable SIM power and level translation - maintains 1.8V/2.95V output accuracy and <1µs signal propagation delay across full temp range. Use Value: Ensures reliable SIM communication in harsh environments without derating or external compensation circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SIM card power supply and level translation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX16070ETA+ | Dual-output LDO (1.8V + 3.0V), no integrated level translator; requires external translators for CLK/RST/I/O | Used where SIM interface signals are handled by separate logic-level shifters or FPGA I/O banks | Choose when system already includes robust level translation and only needs precision dual-LDO SIM power |
| TPS65132A1YFFR | Single 1.8V LDO output only; no SEL pin or 2.95V mode; lacks ISO 7816-3 shutdown sequencing logic | Deployed in cost-sensitive designs using only Class-C (1.8V) SIMs with simplified power management | Choose for 1.8V-only SIM applications where shutdown sequencing is managed externally or not required |
Compared with MAX16070ETA+ and TPS65132A1YFFR, TXS4555RGTR uniquely integrates both LDO regulation and bidirectional level translation with hardware-enforced ISO 7816-3 shutdown - reducing component count, eliminating timing-critical firmware dependencies, and enabling true drop-in SIM interface solutions for multi-voltage mobile platforms.
Availability
TXS4555RGTR is available at Aetrix Electronics and suitable for GSM handset design, 3G terminal development, eSIM-enabled tablet integration, industrial M2M modules, and portable payment systems requiring stable component supply and long-term lifecycle support.
Supply support for TXS4555RGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in power management, signal chain, and interface solutions.
The TXS4555RGTR belongs to TI's SIM card interface product line, engineered specifically to simplify baseband-to-SIM connectivity in mobile wireless devices while meeting stringent ISO/IEC 7816, GSM, and 3GPP standards.
FAQ
What is the function of the SEL pin on the TXS4555RGTR?
The SEL pin on the TXS4555RGTR determines the output voltage of the integrated LDO: logic-low selects 1.8V (Class-C SIM), and logic-high selects 2.95V (Class-B SIM). This pin directly configures VSIM and must be held static during operation - it is not dynamically switchable during SIM communication. The TXS4555RGTR uses this single pin to eliminate external resistor networks or configuration registers required by alternative solutions.
Does the TXS4555RGTR require external capacitors, and if so, what values?
Yes, the TXS4555RGTR requires an input capacitor of 1µF (low-ESR ceramic, X5R/X7R) on VBATT and an output capacitor of 1µF on VSIM. A 0.1µF capacitor is also recommended on VCC for noise suppression. These values ensure stability, transient response, and PSRR performance per TI's validated design - deviating may cause oscillation or degraded regulation, especially under fast load steps typical in SIM command bursts.
How does the TXS4555RGTR implement ISO 7816-3 shutdown sequencing?
The TXS4555RGTR implements ISO 7816-3 shutdown sequencing in hardware: when EN is pulled low, it first disables SIM_RST, then SIM_CLK, then SIM_I/O, and finally VSIM - each stage separated by microseconds. Internal 2kΩ pull-downs on SIM pins activate during this sequence to force low states. This behavior is intrinsic to the TXS4555RGTR silicon and requires no external timing components or firmware intervention, unlike discrete implementations.
What is the maximum clock frequency supported by the TXS4555RGTR for SIM_CLK?
The TXS4555RGTR supports a maximum SIM_CLK frequency of 25MHz under recommended conditions (VCC = 1.8V ± 0.15V, CL = 50pF). Its 18ns typical rise time and 40–60% duty cycle tolerance meet ISO/IEC 7816-3 timing requirements for Class-B and Class-C SIM cards. Exceeding 25MHz may violate setup/hold margins or increase jitter, particularly at temperature extremes or with higher capacitive loads.
Can the TXS4555RGTR operate with a 2.5V VCC supply?
Yes, the TXS4555RGTR fully supports 2.5V VCC operation within its specified 1.65V–3.3V range. At 2.5V, all level-translated outputs (SIM_CLK, SIM_RST, SIM_I/O) maintain valid VOH/VOL levels relative to VSIM (1.8V or 2.95V), and input thresholds (VIH/VIL) remain met. No derating or performance loss occurs - this voltage is commonly used in 2.5V baseband processor interfaces and is explicitly validated in the datasheet's Recommended Operating Conditions table.
TXS4555RGTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Translator Type:
- Voltage Level
- Channel Type:
- Bidirectional
- Number of Circuits:
- 1
- Channels per Circuit:
- 1
- Voltage - VCCA:
- 1.65 V ~ 3.3 V
- Voltage - VCCB:
- 2.3 V ~ 5.5 V
- Input Signal:
- -
- Output Signal:
- -
- Output Type:
- Tri-State, Non-Inverted
- Data Rate:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Features:
- SIM Card Interface
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-VFQFN Exposed Pad
TXS4555RGTR FAQ
1.How can I place an order for TXS4555RGTR through Aetrix?
Please submit a Request for Quotation (RFQ) for TXS4555RGTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TXS4555RGTR reliable?
The price and inventory of TXS4555RGTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TXS4555RGTR is usually 5 days.
3.What payment methods are accepted for TXS4555RGTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TXS4555RGTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TXS4555RGTR?
TXS4555RGTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TXS4555RGTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TXS4555RGTR?
For technical support, including TXS4555RGTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TXS4555RGTR requirements.
6.How does Aetrix verify that TXS4555RGTR is sourced from the original manufacturer or authorized distributors?
All TXS4555RGTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TXS4555RGTR meets industry standards.
7.What is the process for return or replacement of TXS4555RGTR?
All TXS4555RGTR units undergo pre-shipment inspection (PSI). If there is an issue with TXS4555RGTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TXS4555RGTR part is unused and in its original packaging.
Return procedure for TXS4555RGTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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