STMicroelectronics TYN612MFP

Overview

TYN612MFP from STMicroelectronics is a 12 A, 600 V RMS sensitive-gate silicon controlled rectifier (SCR) in TO-220FPAB insulated package, rated for 5 mA max gate trigger current and 1.6 V max on-state voltage at 24 A, used in motorbike voltage regulation, capacitive discharge ignition, and crowbar overvoltage protection circuits.

For engineers reviewing the TYN612MFP datasheet, TYN612MFP pinout, TYN612MFP application, or TYN612MFP equivalent, key selection criteria include IT(RMS) = 12 A, VDRM/VRRM = 600 V, IGT(max) = 5 mA, dV/dt(min) = 50 V/µs, and thermal resistance Rth(j-c) = 4.5 °C/W - all critical for reliable phase-control and surge-protection designs.

Technical Context

This SCR operates in forward-blocking mode until gate-triggered, then latches into conduction until current falls below holding level (IH ≤ 20 mA). It supports 125 A non-repetitive surge (tp = 8.3 ms) and sustains 50 A/µs critical dI/dt with 2×IGT gate drive.

Designed for half-wave or full-wave AC phase control, it features low threshold voltage (Vt0 ≤ 0.85 V) and dynamic resistance (Rd ≤ 30 mΩ) at 125 °C, enabling efficient power switching in thermally constrained TO-220FPAB mounts.

Key Specifications

Pinout & Package

TYN612MFP uses the TO-220FPAB package: insulated plastic case with metal tab (cathode-connected), 3-terminal configuration, UL94 V0 epoxy, lead-free terminations per ECOPACK® standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SCR applications.

Compared with BT169G and TYN612, TYN612MFP uniquely combines 12 A/600 V ratings with integrated insulation in TO-220FPAB - eliminating external isolation components and enabling compact, dual-SCR AC control topologies without creepage compromises.

Availability

TYN612MFP is available at Aetrix Electronics and suitable for motorbike voltage regulation, capacitive discharge ignition, and overvoltage crowbar protection requiring stable component supply and long-lifecycle support.

Supply support for TYN612MFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

TYN612MFP belongs to ST's standard SCR product line, engineered specifically for ruggedized AC power control in cost-sensitive, thermally constrained applications like power tools and two-wheeler electronics.

FAQ

What is the maximum junction temperature for continuous operation?

The TYN612MFP has an operating junction temperature range of –40 °C to +125 °C. For continuous 12 A RMS operation in TO-220FPAB, case temperature must be held ≤70 °C per absolute ratings - requiring heatsinking to maintain Rth(j-c) × Pd + Tc ≤ 125 °C.

Can TYN612MFP be used in back-to-back configuration without external isolation?

Yes - its TO-220FPAB package provides reinforced insulation between the metal tab (cathode) and PCB mount surface, enabling direct back-to-back mounting for full-wave AC control without additional insulating hardware or pads.

What gate drive circuitry is recommended for reliable triggering?

A 5–12 V pulse with ≥1.5 mA (min) and ≤5 mA (max) peak current, duration ≥20 µs, is sufficient. Use a series resistor (e.g., 1.5 kΩ with 12 V supply) and suppress gate-cathode transients with a 0.1 µF capacitor to prevent false turn-on from dV/dt coupling.

How does the TO-220FPAB package affect thermal performance vs. TO-220AB?

TO-220FPAB has higher junction-to-case thermal resistance (4.5 °C/W vs. 1.3 °C/W for TO-220AB) due to internal insulation layers, requiring more aggressive heatsinking for equivalent 12 A RMS operation - but enables safer mounting in space-constrained or double-sided layouts.