Infineon Technologies TZ400N26KOFHPSA1

Overview

TZ400N26KOFHPSA1 from Infineon Technologies is a phase-control thyristor module rated for 400 A average on-state current (ITAVM) at TC = 85°C, 2600 V repetitive peak off-state voltage (VRRM), and 13 kA non-repetitive surge current (ITSM). It integrates two inverse-parallel thyristor dies in a press-pack ceramic housing with AlN isolation, designed for high-power AC line commutation in industrial rectifiers and motor drives.

For engineers reviewing the TZ400N26KOFHPSA1 datasheet, TZ400N26KOFHPSA1 pinout, TZ400N26KOFHPSA1 application, or TZ400N26KOFHPSA1 equivalent, key selection criteria include its 0.062 °C/W junction-to-case thermal resistance, 150 A/µs critical di/dt rating, 1000 V/µs critical dv/dt capability, and gate trigger current ≤250 mA - all validated under full-rated conduction angles up to 180°.

Technical Context

This thyristor module implements a dual-die, inverse-parallel configuration enabling bidirectional AC phase control without external anti-parallel diodes. Its pressure-contact Si pellet design with aluminum nitride (AlN) internal insulation ensures stable thermal performance and high voltage standoff across wide temperature ranges (–40°C to +125°C junction).

The device operates under line-commutated conditions with a typical circuit commutated turn-off time (tq) of 300 µs at Tvj max and supports forced-air or natural cooling via heatsink mounting (M2 torque: 12 Nm). Gate triggering follows DIN IEC 747-6 standards with defined latching (IL ≤1500 mA) and holding (IH ≤300 mA) thresholds.

Key Specifications

Pinout & Package

Package: Press-pack ceramic module with two isolated thyristor arms (A1/K1 and A2/K2), AlN internal isolation, M1 mechanical mounting (5 Nm), M2 electrical terminals (12 Nm), weight 900 g, creepage distance 15 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT400N26KOFHPSA1, TZ400N26KOFHPSA1 delivers 67% higher average current at the same case temperature, while TZ500N26KOFHPSA1 extends that capability further but adds mechanical integration constraints.

Availability

TZ400N26KOFHPSA1 is available at Aetrix Electronics and suitable for industrial AC motor drives, medium-voltage rectifier systems, static VAR compensators, and grid-scale battery charging interfaces requiring stable component supply across extended product lifecycles.

Supply support for TZ400N26KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's "Netz-Thyristor-Modul" series, engineered specifically for high-reliability, high-current phase control in industrial power conversion where line commutation, thermal robustness, and long service life are mandatory.

FAQ

What is the maximum allowable junction temperature for TZ400N26KOFHPSA1?

The maximum junction temperature (Tvj max) is strictly limited to 125°C, as specified in the official datasheet. Exceeding this value risks irreversible degradation of the silicon die and AlN isolation layer. Thermal design must ensure that under worst-case conduction angle (180°) and ambient conditions, the calculated junction temperature remains below 125°C using the provided ZthJC transient thermal impedance curves.

Can TZ400N26KOFHPSA1 be used in forced-air cooled systems?

Yes - the module is qualified for both natural and forced-air cooling. With a KM17 heatsink and Papst 4650N fan, the transient thermal impedance ZthCA drops significantly (Rthn values down to 0.239 °C/W), enabling higher ITAVM operation. Mounting torque for electrical terminals must remain at 12 Nm ±10% to maintain low-contact-resistance interfaces under vibration.

What gate drive voltage and current are required for reliable turn-on?

A gate trigger voltage ≤2.2 V and current ≤250 mA at 25°C are sufficient for turn-on, per datasheet limits. However, for robust operation across temperature (–40°C to +125°C) and aging, a 15 V / 1 A pulse with 20 µs width and ≥1 A/µs diG/dt is recommended. The latching current IL is ≤1500 mA, so gate drive must sustain current beyond initial triggering until anode current exceeds this threshold.

How does the dual-arm inverse-parallel configuration affect PCB or heatsink layout?

The module has fully isolated A1/K1 and A2/K2 arms with independent gate terminals, requiring separate gate drive circuits and physical separation of high-current paths. Heatsink mounting uses a single baseplate, but thermal coupling between arms is minimal due to AlN isolation - allowing asymmetric loading. Mechanical mounting torque (M1: 5 Nm ±15%) must be uniformly applied to avoid die tilt and contact resistance variation.