Infineon Technologies TZ425N16KOFHPSA1

Overview

TZ425N16KOFHPSA1 from Infineon Technologies is a phase-control thyristor module designed for high-power AC line switching and rectification in industrial drive systems. It delivers 425 A average on-state current at TC = 85°C, supports repetitive peak voltages up to 1600 V (VDRM/VRRM), and features a low on-state voltage drop of 0.9 V (VT0) with 0.3 mΩ slope resistance (rT), enabling efficient power conversion in soft starters and static switches.

For engineers reviewing the TZ425N16KOFHPSA1 datasheet, TZ425N16KOFHPSA1 pinout, TZ425N16KOFHPSA1 application, or TZ425N16KOFHPSA1 equivalent, key selection criteria include its pressure-contact construction, electrically insulated base plate, 0.078 K/W junction-to-case thermal resistance, and suitability for crowbar protection and UPS rectifier circuits requiring high surge current capability (14.5 kA ITSM).

Technical Context

This thyristor module operates as a bidirectional, gate-controlled semiconductor switch for phase-angle control in AC power systems. Its design integrates two anti-parallel thyristor dies in a single press-pack package with AlN ceramic isolation, supporting commutation-safe turn-off (tq = 250 µs typical) and high dv/dt immunity (1000 V/µs).

The device uses pressure-contact technology-no wire bonds or solder interconnects-ensuring stable thermal and electrical performance under high di/dt (120 A/µs critical) and repeated surge stress. Its DC-rated RthJC of 0.078 K/W enables direct mounting to heatsinks with minimal thermal interface resistance.

Key Specifications

Pinout & Package

Package: Press-pack module with electrically insulated AlN-ceramic base plate, 50 mm × 50 mm footprint, M1 mechanical mounting (5 Nm), M2 terminal torque (12 Nm), weight ≈ 900 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT175N16KOFHPSA1 and TZ650N16KOFHPSA1, TZ425N16KOFHPSA1 occupies the mid-range current tier-offering optimal balance between conduction loss, thermal management, and board-space utilization for 300–500 A industrial power converters.

Availability

TZ425N16KOFHPSA1 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, crowbar protection circuits, and static switches requiring stable component supply and long-lifecycle support.

Supply support for TZ425N16KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to Infineon's high-power thyristor module product line, engineered specifically for ruggedized AC power control in industrial motor drives, energy storage systems, and grid-tied power conversion equipment.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The maximum junction temperature (Tvj max) is 125°C. This value sets the upper thermal limit for safe operation and must be respected in heatsink sizing. With RthJC = 0.078 K/W and ITAVM = 425 A, power dissipation is calculated using VT0 + rT·ITAVM, then combined with ambient and heatsink conditions to ensure Tvj stays below 125°C under worst-case load and cooling scenarios.

Can TZ425N16KOFHPSA1 be used in parallel configurations?

Yes, but only with strict matching and forced current sharing. The module's pressure-contact construction and low rT improve current-sharing behavior, yet dynamic imbalance during turn-on requires matched gate drive timing, identical layout, and possibly external balancing resistors or reactors. Parallel use is not recommended without empirical validation per application.

What gate drive requirements must be met for reliable triggering?

A minimum gate trigger current of 250 mA (IGT max) and voltage of 1.5 V (VGT max) at 25°C is required. Gate pulses must exceed 20 µs duration with diG/dt ≥ 1 A/µs to ensure latching. For robust operation across temperature, gate drive should deliver ≥350 mA peak with 5–10 V compliance and low-impedance path to minimize noise-induced false triggering.

Is the base plate electrically isolated, and what is its isolation rating?

Yes-the base plate is electrically isolated using aluminum nitride (AlN) ceramic with a rated insulation test voltage of 3.6 kV RMS for 1 second. This allows direct mounting onto grounded metal heatsinks without additional insulating hardware, simplifying mechanical integration while maintaining safety clearance in industrial power systems.