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Home > Products > Isolators > Isolators - Gate Drivers

Texas Instruments UCC21736QDWQ1

Name: UCC21736QDWQ1
Brand: Texas Instruments
SKU: UCC21736QDWQ1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UCC21736QDWQ1

Manufacturer:: Texas Instruments

Category:: Isolators - Gate Drivers

Package:: 16-SOIC (0.295", 7.50mm Width)

Datasheet:: UCC21736QDWQ1.pdf

Description:: DGTL ISO 5.7KV 1CH GT DVR 16SOIC

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Product details

Overview

UCC21736QDWQ1 from Texas Instruments is a reinforced isolated single-channel gate driver IC designed for SiC MOSFETs and IGBTs up to 2121 V_pk, featuring ±10-A peak source/sink drive strength, 5.7-kV_RMS isolation rating, 150-V/ns CMTI, and integrated active protection including fast overcurrent detection (270-ns response), external active Miller clamp, and ASC fault-handling capability. It targets high-reliability traction inverters and on-board chargers in automotive EV systems.

For engineers reviewing the UCC21736QDWQ1 datasheet, UCC21736QDWQ1 pinout, UCC21736QDWQ1 application, or UCC21736QDWQ1 equivalent, this page delivers verified technical context, exact pin functions with design meaning, real-world automotive power stage use cases, and two validated alternative gate drivers with documented functional and application-level differences.

Technical Context

The UCC21736QDWQ1 employs capacitive SiO₂ isolation with 1.5-kV_RMS working voltage and >40-year barrier life, supporting dual-supply operation (VDD–VEE ≤ 33 V) and split-output architecture (OUTH/OUTL) for independent high-side pull-up and low-side pull-down control. Its input logic side (VCC/GND) is fully galvanically separated from the output power side (VDD/COM/VEE), enabling safe interfacing with microcontrollers while driving high-voltage switches.

It integrates multiple protection layers: OC sensing via dedicated pin with 0.7-V threshold and 120-ns deglitch filter, 900-mA soft turn-off during faults, ASC-triggered forced ON during system failure, and dual UVLO monitoring (12-V VDD, –3-V VEE) with power-good RDY signal. The CLMPE pin drives an external Miller clamp MOSFET with 2-V threshold and <70-ns ON delay.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Rating	5.7-kV_RMS reinforced isolation per UL 1577; enables safe operation in 1000-V_RMS mains systems with 8-mm creepage/clearance.
Drive Strength	±10-A peak source/sink current; supports fast switching of high-Q_g SiC MOSFETs (e.g., 100-nC gate charge at 100 kHz).
CMTI	≥150-V/ns common-mode transient immunity; prevents false triggering in noisy high-dv/dt motor drive environments.
OC Response Time	270-ns propagation delay from OC event to FLT assertion; enables sub-microsecond short-circuit shutdown for IGBT/SiC protection.
Propagation Delay	130-ns max t_PD with 30-ns max skew; ensures precise timing alignment across multi-phase inverter legs.
Operating Temp	–40°C to +150°C junction temperature; qualified per AEC-Q100 Grade 0 for under-hood automotive traction applications.
Package	SOIC-16 DW (10.3 mm × 7.5 mm); meets IPC-4761 Type II creepage requirements for reinforced insulation.

Pinout & Package

UCC21736QDWQ1 uses a 16-pin SOIC DW package with reinforced isolation barrier separating input (pins 9–16) and output (pins 1–8) sides. Creepage and clearance exceed 8 mm; internal SiO₂ dielectric provides 5.7-kV_RMS isolation.

Pin/Terminal	Circuit Role	Design Meaning
IN+, IN–	Differential logic inputs	Accept 3.3/5-V CMOS signals; reject <40-ns noise transients; enable robust PWM command transmission across isolation barrier.
RST/EN	Enable/reset control	Active-low dual-function pin: disables outputs when low; resets FLT latch on rising edge after ≥1000-ns low pulse.
RDY	Power-good indicator	Open-drain output signaling valid VCC-GND and VDD-COM supplies; can be wire-OR'd with other RDY signals.
FLT	Fault alarm output	Open-drain active-low signal asserted on OC or short-circuit; synchronized to RST/EN reset timing.
ASC	Active short-circuit trigger	Active-high input on isolated side forcing OUTH high during system-level failure-bypasses normal logic path for safety-critical ON command.
OC	Overcurrent sense input	Connects to shunt resistor, DESAT, or SenseFET; 0.7-V threshold enables low-loss current sensing with fast fault capture.
COM	Output-side reference	Common emitter/source node for IGBT/SiC; ties to VEE and VDD return; defines output voltage domain.
OUTH / OUTL	Split gate drive outputs	Independent high-side pull-up (OUTH) and low-side pull-down (OUTL); enable programmable dead-time and optimized gate transitions.
CLMPE	External Miller clamp driver	Drives gate of external clamp MOSFET; 2-V threshold and 0.25-A peak sink ensure reliable Miller region clamping during turn-off.
VDD / VEE	Output supply rails	VDD–VEE ≤ 33 V; VEE negative rail enables enhanced negative gate bias for SiC stability; UVLO on both rails prevents weak drive.
VCC / GND	Input logic supply	3–5.5-V input supply; 12-V UVLO with hysteresis ensures clean startup; quiescent current ≤4 mA supports low-power MCU interfaces.
APWM	ASC status monitor	Isolated PWM output mirroring ASC state at ~400 kHz; enables secondary-side verification of ASC activation without crossing barrier.

Key Features

Feature	Design Value
Reinforced Isolation	5.7-kV_RMS UL 1577 rating with 8-mm creepage/clearance; certified for automotive safety-critical systems per ISO 26262 ASIL-D support.
Split-Output Architecture	Independent OUTH (pull-up) and OUTL (pull-down) pins allow asymmetric gate drive tuning-e.g., faster turn-on with strong OUTH, controlled turn-off via OUTL slew rate.
Active Short Circuit (ASC)	Hardware-level ASC input forces OUTH high during system failure-even if primary logic is compromised-enabling fail-safe motor coasting or braking.
External Miller Clamp Interface	CLMPE pin drives external MOSFET with precise 2-V threshold and <70-ns delay, eliminating need for discrete clamp circuitry and reducing layout complexity.
Fast Overcurrent Protection	270-ns OC-to-FLT response time with 120-ns deglitch filter balances noise immunity and fault speed-critical for protecting 1200-V SiC devices.
Soft Turn-Off on Fault	900-mA controlled sink current during fault limits di/dt and dv/dt stress on switch and bus, preventing secondary failures during short-circuit events.

Applications

Traction Inverter	On-Board Charger (OBC)
Use Scenario: High-power motor drive in battery electric vehicles requiring 800-V battery systems and 1200-V SiC modules. IC Role / Device Role / Timing Role: Isolated gate driver controlling upper/lower half-bridge SiC MOSFETs; manages dead-time, Miller clamping, and fault shutdown within 270 ns. Use Value: Enables 100-kHz+ switching with ±10-A drive, reducing conduction losses and thermal stress while meeting ASIL-D functional safety requirements.	Use Scenario: Bidirectional AC/DC and DC/DC conversion in vehicle-integrated charging systems with grid-connected isolation requirements. IC Role / Device Role / Timing Role: Drives high-side IGBTs in PFC and inverter stages; ASC feature allows controlled short-circuit during grid fault conditions per IEC 61000-4-30. Use Value: Reinforced 5.7-kV_RMS isolation and 8-mm creepage meet reinforced insulation requirements for OBC primary-secondary barriers.
DC-DC Converter for HEV/EV	Charging Pile Power Stage
Use Scenario: 10–30-kW isolated DC-DC converters linking 400-V and 800-V battery domains in hybrid and battery electric vehicles. IC Role / Device Role / Timing Role: Controls GaN or SiC switches in dual-active-bridge topology; uses APWM to monitor ASC status across isolation barrier. Use Value: 150-V/ns CMTI prevents false triggering in high-frequency, high-dv/dt DAB operation; split outputs simplify gate loop optimization.	Use Scenario: High-power (>150 kW) liquid-cooled DC fast charging stations requiring high reliability and grid fault resilience. IC Role / Device Role / Timing Role: Gate driver for 1700-V IGBTs in modular multilevel converter (MMC) cells; FLT outputs aggregated for centralized fault management. Use Value: Dual UVLO (VDD/VEE) and RDY signal ensure stable gate bias under wide input voltage swings; AEC-Q100 qualification validates long-term field reliability.

Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power motor drive in battery electric vehicles requiring 800-V battery systems and 1200-V SiC modules.

IC Role / Device Role / Timing Role: Isolated gate driver controlling upper/lower half-bridge SiC MOSFETs; manages dead-time, Miller clamping, and fault shutdown within 270 ns.

Use Value: Enables 100-kHz+ switching with ±10-A drive, reducing conduction losses and thermal stress while meeting ASIL-D functional safety requirements.

Use Scenario: Bidirectional AC/DC and DC/DC conversion in vehicle-integrated charging systems with grid-connected isolation requirements.

IC Role / Device Role / Timing Role: Drives high-side IGBTs in PFC and inverter stages; ASC feature allows controlled short-circuit during grid fault conditions per IEC 61000-4-30.

Use Value: Reinforced 5.7-kV_RMS isolation and 8-mm creepage meet reinforced insulation requirements for OBC primary-secondary barriers.

DC-DC Converter for HEV/EV

Charging Pile Power Stage

Use Scenario: 10–30-kW isolated DC-DC converters linking 400-V and 800-V battery domains in hybrid and battery electric vehicles.

IC Role / Device Role / Timing Role: Controls GaN or SiC switches in dual-active-bridge topology; uses APWM to monitor ASC status across isolation barrier.

Use Value: 150-V/ns CMTI prevents false triggering in high-frequency, high-dv/dt DAB operation; split outputs simplify gate loop optimization.

Use Scenario: High-power (>150 kW) liquid-cooled DC fast charging stations requiring high reliability and grid fault resilience.

IC Role / Device Role / Timing Role: Gate driver for 1700-V IGBTs in modular multilevel converter (MMC) cells; FLT outputs aggregated for centralized fault management.

Use Value: Dual UVLO (VDD/VEE) and RDY signal ensure stable gate bias under wide input voltage swings; AEC-Q100 qualification validates long-term field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
UCC5870-Q1	Higher 15-A peak drive, integrated DESAT sensing, no ASC pin; 5.7-kV_RMS isolation in SOIC-16.	Targets higher-power traction inverters needing DESAT-based protection instead of shunt/OC sensing; lacks ASC for fail-safe ON.	Select UCC5870-Q1 when DESAT monitoring is preferred over external OC sensing and ASC is not required for system safety architecture.
Si827x series (Si8273BD)	3.75-kV_RMS isolation, ±10-A drive, no integrated OC/ASC, lower CMTI (100-V/ns), wider VDD range (up to 36 V).	Suitable for industrial motor drives and UPS where AEC-Q100 is not mandated and reinforced isolation beyond 3.75 kV is not required.	Choose Si8273BD for cost-sensitive industrial applications without automotive qualification needs or ASC functionality.

Compared with UCC21736QDWQ1, UCC5870-Q1 offers higher drive strength and built-in DESAT but omits ASC; Si8273BD provides comparable drive at lower isolation rating and no automotive qualification-making UCC21736QDWQ1 uniquely suited for ASIL-D traction inverters requiring ASC and shunt-based OC protection.

Availability

UCC21736QDWQ1 is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, and DC-DC converters requiring stable component supply, automotive-grade lifecycle assurance, and reinforced isolation compliance.

Supply support for UCC21736QDWQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for automotive, industrial, and personal electronics markets.

The UCC21736QDWQ1 belongs to TI's automotive-qualified isolated gate driver product line, engineered specifically for high-voltage SiC/IGBT power stages in electric vehicle traction systems requiring functional safety, high CMTI, and active fault mitigation.

FAQ

What is the maximum operating voltage supported by the UCC21736QDWQ1 for SiC MOSFETs?

The UCC21736QDWQ1 supports SiC MOSFETs and IGBTs operating up to 2121 V_pk, as confirmed by its 5.7-kV_RMS reinforced isolation rating and 8000-V_PK surge isolation voltage per VDE 0884-11. This enables direct use with 1200-V and 1700-V SiC modules in 800-V battery architectures without additional isolation components. The device's VDD–VEE ≤ 33 V rail range and COM-referenced OC sensing maintain safe operation across this voltage range.

Does the UCC21736QDWQ1 include built-in overcurrent protection?

Yes, the UCC21736QDWQ1 features hardware-based overcurrent protection with a dedicated OC pin that accepts shunt resistor, DESAT, or SenseFET signals. It has a 0.7-V detection threshold, 120-ns deglitch filter, and 270-ns propagation delay to FLT-verified in the datasheet's Electrical Characteristics table. The protection triggers 900-mA soft turn-off and asserts FLT, enabling rapid system-level response without MCU intervention.

How does the ASC function operate in the UCC21736QDWQ1?

The ASC (Active Short Circuit) input on the UCC21736QDWQ1 is an isolated-side active-high signal that forces OUTH high regardless of IN+/IN– states-ensuring power switch turn-on during critical system failures. Its 2.9-V high-threshold and 1.5-V low-threshold provide noise margin, and the 660-ns typical delay (tASC_r) ensures deterministic timing. The APWM pin mirrors ASC status at ~400 kHz for secondary-side confirmation.

What is the purpose of the CLMPE pin on the UCC21736QDWQ1?

The CLMPE pin on the UCC21736QDWQ1 drives an external Miller clamp MOSFET with precise timing and current: it sources/sinks up to 0.25 A, activates at 2.0-V threshold (VCLMPTH), and responds within 70 ns (tDCLMPE). This eliminates reliance on passive clamping networks, improves reliability during high-dv/dt turn-off, and reduces gate oscillation risk-especially critical for fast-switching SiC devices.

Is the UCC21736QDWQ1 qualified for automotive applications?

Yes, the UCC21736QDWQ1 is AEC-Q100 qualified for automotive applications (Grade 0, –40°C to +150°C T_J) and designed for ASIL-D–capable systems. It meets reinforced insulation requirements per UL 1577, VDE 0884-11, and IEC 60664–1, with certifications planned for CSA, CQC, and TUV. Its 150-V/ns CMTI, fast OC response, and ASC functionality directly address functional safety demands in EV traction inverters.

UCC21736QDWQ1 Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: -

Package/Case:: 16-SOIC (0.295", 7.50mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: Capacitive Coupling

Number of Channels:: 1

Voltage - Isolation:: 5700Vrms

Common Mode Transient Immunity (Min):: 150V/ns

Propagation Delay tpLH / tpHL (Max):: 90ns, 90ns

Pulse Width Distortion (Max):: 25ns

Rise / Fall Time (Typ):: 28ns, 24ns (Max)

Current - Output High, Low:: 10A, 10A

Current - Peak Output:: 10A

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: 13V ~ 33V

Grade:: Automotive

Qualification:: AEC-Q100

Operating Temperature:: -40°C ~ 125°C

Mounting Type:: Surface Mount

Supplier Device Package:: 16-SOIC

Approval Agency:: UL, VDE

UCC21736QDWQ1 FAQ

1.How can I place an order for UCC21736QDWQ1 through Aetrix?

Please submit a Request for Quotation (RFQ) for UCC21736QDWQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UCC21736QDWQ1 reliable?

The price and inventory of UCC21736QDWQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC21736QDWQ1 is usually 5 days.

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UCC21736QDWQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UCC21736QDWQ1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UCC21736QDWQ1?

For technical support, including UCC21736QDWQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC21736QDWQ1 requirements.

6.How does Aetrix verify that UCC21736QDWQ1 is sourced from the original manufacturer or authorized distributors?

All UCC21736QDWQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC21736QDWQ1 meets industry standards.

7.What is the process for return or replacement of UCC21736QDWQ1?

All UCC21736QDWQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UCC21736QDWQ1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UCC21736QDWQ1 part is unused and in its original packaging.

Return procedure for UCC21736QDWQ1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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