Texas Instruments UCC21750DW

Overview

UCC21750DW from Texas Instruments is a reinforced isolated single-channel gate driver IC for SiC MOSFETs and IGBTs, delivering ±10-A peak source/sink drive strength, 5.7-kVRMS isolation rating, 150-V/ns CMTI, 200-ns DESAT fault response, and integrated isolated analog sensing with PWM output. It operates up to 2121-Vpk DC bus voltage in high-reliability industrial power conversion systems.

For engineers reviewing the UCC21750DW datasheet, UCC21750DW pinout, UCC21750DW application, or UCC21750DW equivalent, key selection criteria include reinforced isolation certification (VDE 0884-17/UL 1577), split-output gate drive architecture, active Miller clamp (4-A), soft turn-off (400-mA), and isolated temperature/voltage sensing capability via AIN/APWM interface.

Technical Context

The UCC21750DW employs SiO₂ capacitive isolation with >8 mm creepage/clearance, supporting 1.5-kVRMS working voltage and 12.8-kVPK surge immunity. Its dual-supply gate drive stage (VDD–VEE up to 33 V) enables flexible biasing for high-side SiC/IGBT switching with split OUTH/OUTL outputs and internal 4-A active Miller clamp referenced to VEE.

It integrates a galvanically isolated analog front-end: AIN accepts 0.6–4.5 V input (NTC/PTC/thermal diode or DC-link voltage), converted to a 380–420 kHz PWM output on APWM with 10-kHz bandwidth and programmable duty cycle (7.5–89.5%). Fault handling includes 200-ns DESAT detection, open-drain FLT assertion, and RST/EN-controlled reset with <1-μs pulse rejection.

Key Specifications

Pinout & Package

UCC21750DW uses a SOIC-16 DW package (10.3 mm × 7.5 mm) with >8 mm creepage and clearance, optimized for reinforced isolation in high-voltage applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Compared with UCC21750DW, UCC21732DW removes analog sensing but retains identical protection and drive performance-ideal for simplified architectures. Si827xISO-16 offers lower cost and integration but sacrifices reinforced certification, drive strength, and sensing-making it unsuitable for 1500-V+ solar or UPS applications requiring VDE/UL compliance.

Availability

UCC21750DW is available at Aetrix Electronics and suitable for industrial motor drives, server/telecom power supplies, uninterruptible power supplies (UPS), and solar inverters requiring stable component supply, long-term lifecycle support, and certified reinforced isolation.

Supply support for UCC21750DW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and high-reliability power management solutions.

The UCC21750DW belongs to TI's reinforced isolated gate driver product line, engineered for high-voltage SiC/IGBT systems demanding functional safety, fast protection, and integrated sensing in motor drives, renewable energy, and enterprise power infrastructure.

FAQ

What is the maximum DC bus voltage supported by the UCC21750DW?

The UCC21750DW supports SiC MOSFETs and IGBTs operating up to 2121-Vpk DC bus voltage, validated by its 5.7-kVRMS reinforced isolation rating and 2121-VPK repetitive peak isolation voltage per VDE 0884-17. This enables direct use in 1500-V solar inverters and 690-V industrial motor drives without additional isolation barriers. The UCC21750DW's VDD–VEE rating of up to 33 V further accommodates negative gate bias for enhanced IGBT robustness.

How does the isolated analog sensing feature of the UCC21750DW work?

The UCC21750DW converts analog signals applied to the AIN pin (0.6–4.5 V, referenced to COM) into a duty-cycle-modulated PWM signal on the APWM pin (380–420 kHz, 7.5–89.5% duty). This fully isolated front-end supports NTC/PTC thermistors, thermal diodes, or DC-link voltage dividers-eliminating external isolation amplifiers or ADCs. The UCC21750DW's 10-kHz bandwidth and ±0.1% linearity ensure accurate real-time monitoring without compromising safety isolation.

What protection features does the UCC21750DW provide against short-circuit events?

The UCC21750DW delivers comprehensive short-circuit protection via its DESAT circuit: detection threshold at 8.5–9.8 V, 200-ns propagation delay to fault assertion, and 400-mA soft turn-off current to limit voltage overshoot. It also includes a 4-A internal active Miller clamp (CLMPI) to suppress false turn-on during high dV/dt transitions and input/output UVLO with hysteresis to prevent erratic behavior during supply brownouts. All protections are fully isolated and reported via open-drain FLT.

Can the UCC21750DW drive both SiC MOSFETs and IGBTs?

Yes, the UCC21750DW is explicitly designed for both SiC MOSFETs and IGBTs, supporting devices rated up to 2121-Vpk. Its ±10-A peak drive strength, split OUTH/OUTL outputs, and VDD–VEE range up to 33 V (including negative VEE down to –17.5 V) accommodate the higher gate charge and negative turn-off requirements of IGBTs, while its fast 130-ns propagation delay and 150-V/ns CMTI meet the demanding switching needs of SiC devices. The UCC21750DW's datasheet validates performance across both technologies.

What certifications apply to the UCC21750DW's isolation barrier?

The UCC21750DW carries reinforced isolation certification per DIN EN IEC 60747-17 (VDE 0884-17) and UL 1577 Component Recognition, with certificate number 40040142 (VDE) and file number E181974 (UL). It achieves 5.7-kVRMS withstand voltage, 8000-VPK transient isolation, and 2121-VPK repetitive peak voltage-meeting IEC 61800-5-1 and IEC 62109 safety requirements for industrial drives and renewable energy systems. The UCC21750DW's >40-year barrier lifetime projection further validates long-term reliability.