Texas Instruments UCC23113DWYR
- Part No.:
- UCC23113DWYR
- Manufacturer:
- Texas Instruments
- Category:
- Isolators - Gate Drivers
- Package:
- 6-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
UCC23113DWYR.pdf
- Description:
- ISOLATED GATE DRIVER
- Quantity:
- Payment:

- Shipping:

Inventory:1,689
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Product details
Overview
UCC23113DWYR from Texas Instruments is a 5-A source/5-A sink, single-channel functional isolated gate driver with opto-compatible e-diode input, 1.5-kVDC isolation, 12-V UVLO, and rail-to-rail output-designed for driving IGBTs, SiC MOSFETs, and silicon MOSFETs in high-reliability industrial motor drives and solar inverters.
For engineers reviewing the UCC23113DWYR datasheet, UCC23113DWYR pinout, UCC23113DWYR application, or UCC23113DWYR equivalent, key selection considerations include CMTI >100 kV/μs, propagation delay ≤105 ns, part-to-part skew ≤25 ns, pulse width distortion ≤35 ns, and stretched SO-6 package with >8.5-mm creepage/clearance for reinforced insulation compliance.
Technical Context
The UCC23113DWYR employs an emulated diode (e-diode) input stage with dual-series HV SiO₂ capacitors in full differential configuration, enabling on-off keying (OOK) modulation across the isolation barrier-eliminating LED aging and supporting stable operation from –40°C to +150°C junction temperature.
Its output stage integrates parallel P- and N-channel MOSFETs for boosted peak sourcing (ROH || RNMOS ≈ 3.3 Ω during Miller plateau), while the active pulldown and short-circuit clamping circuits ensure safe gate control under VDD loss or fault conditions without external components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 1.5-kVDC functional isolation with >8.5-mm creepage/clearance and CTI >600 V (Material Group I) |
| Output Drive | 5-A peak source / 5-A peak sink current enables fast switching of high-Qg IGBTs and SiC MOSFETs |
| Propagation Delay | ≤105 ns max ensures tight timing control in high-frequency PWM systems (e.g., >100 kHz inverters) |
| CMTI | ≥100 kV/μs minimum prevents false triggering in noisy high-dV/dt environments like motor phase legs |
| UVLO Threshold | 12-V rising-edge UVLO (11–13.5 V range) with 1-V hysteresis avoids chatter during supply transients |
| Operating Temperature | –40°C to +150°C junction temperature supports compact heatsink designs and high-ambient industrial enclosures |
| Input Compatibility | Opto-emulated anode/cathode interface accepts 3.3-V or 5-V PWM with external current-limiting resistor (7–16 mA IF) |
Pinout & Package
UCC23113DWYR is housed in a stretched SOIC-6 (DWY) package with >8.5-mm creepage and clearance, optimized for reinforced insulation in industrial safety standards (IEC 61800, UL 1577).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| ANODE (Pin 1) | Input anode | Forward-biased terminal for e-diode input; accepts 3.3-V/5-V PWM via series resistor (IF = 7–16 mA) |
| NC (Pin 2) | No connection | Internally unconnected; may be left floating or tied to GND for mechanical stability |
| CATHODE (Pin 3) | Input cathode | Reference terminal for e-diode; reverse polarity tolerance up to 5 V enables interlock architectures |
| VEE (Pin 4) | Negative output supply rail | Supports bipolar gate drive (e.g., –8 V for IGBTs); enables active pulldown when VDD is unpowered |
| VOUT (Pin 5) | Gate-drive output | Rail-to-rail output (VEE to VDD) with <25 mV VOL at 20 mA sink; drives gate capacitance directly |
| VDD (Pin 6) | Positive output supply rail | 13–30 V range supports unipolar (15 V) or bipolar (15 V/–8 V) configurations for IGBT/SiC FETs |
Key Features
| Feature | Design Value |
|---|---|
| e-Diode input stage | Eliminates LED degradation; delivers stable forward voltage (2.1 V typ) and low tempco (<1.35 mV/°C) |
| Parallel pull-up architecture | Combines P-MOS (ROH = 9.5 Ω) and N-MOS (RNMOS = 5.1 Ω) for <3.3 Ω effective turn-on resistance during Miller plateau |
| Active pulldown | Clamps VOUT to <2 V when VDD is unpowered-prevents unintended power device turn-on without external circuitry |
| Short-circuit clamping | Internal diodes limit VOUT overshoot during gate short events; supports 500-mA transient (10 µs) and 20-mA continuous clamp current |
| Interlock-ready input | 5-V reverse polarity tolerance on ANODE/CATHODE enables direct implementation of shoot-through prevention logic |
Applications
| Industrial Motor Drives | Solar Inverters |
|---|---|
Use Scenario: Three-phase inverter stage controlling IGBTs in HVAC compressors and servo drives operating at 10–20 kHz PWM frequency. IC Role / Device Role: High-side and low-side gate driver providing 5-A peak current to overcome Miller capacitance and ensure clean, jitter-free switching. Use Value: 25-ns part-to-part skew and 35-ns pulse width distortion enable precise interleaved phase timing, reducing torque ripple and audible noise. |
Use Scenario: DC–AC conversion stage in string inverters using SiC MOSFETs, requiring fast turn-on and robust noise immunity near PV array grounding points. IC Role / Device Role: Functional isolated gate driver delivering 20-V unipolar gate drive with 100-kV/μs CMTI to suppress common-mode noise from ground loops and EMI filters. Use Value: 150°C max junction temperature allows placement near power modules without derating, simplifying thermal layout. |
| Industrial UPS Systems | Induction Heating |
Use Scenario: Bidirectional AC–DC and DC–AC stages in double-conversion UPS, where reliability over 10+ years is mandatory and ambient temperatures exceed 70°C. IC Role / Device Role: Isolated gate driver for IGBT half-bridges handling 16–20 kHz resonant switching with strict dead-time control. Use Value: e-Diode input eliminates LED aging failure mode-extending system MTBF beyond 100,000 hours in continuous operation. |
Use Scenario: Resonant LLC or Class-D inverter driving high-current GaN or SiC switches at 100–500 kHz in cooktop and industrial heating systems. IC Role / Device Role: Low-propagation-delay (≤105 ns) gate driver ensuring accurate zero-voltage switching (ZVS) timing across wide load and temperature ranges. Use Value: Tight propagation delay matching (≤25 ns) minimizes timing mismatch between paralleled half-bridge drivers, preventing current imbalance and thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8273BD-IS | 3.75-kVRMS reinforced isolation; 4-A peak drive; 100-V/ns CMTI; SOIC-8 package | Higher isolation rating suits medical/AFCI applications; lower peak current limits SiC gate charge handling | Prefer for safety-critical systems needing >2.5-kVRMS, but verify gate drive strength for >100-nC SiC FETs |
| ADUM4135BRWZ | 5-kVRMS reinforced isolation; 4-A peak drive; 150-V/ns CMTI; wide-body SOIC-16 package | Larger footprint and higher cost; integrated Miller clamp and DESAT detection add protection complexity | Choose when system-level fault protection (DESAT, Miller clamp) is required-but adds BOM and layout overhead vs. UCC23113DWYR's simplicity |
Compared with Si8273BD-IS and ADUM4135BRWZ, the UCC23113DWYR delivers optimal balance of 5-A drive strength, 100-kV/μs CMTI, and SOIC-6 footprint-making it ideal for space-constrained industrial inverters where pin compatibility with legacy optocouplers and long-term reliability are primary requirements.
Availability
UCC23113DWYR is available at Aetrix Electronics and suitable for industrial motor-control drives, solar inverters, and induction heating systems requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.
Supply support for UCC23113DWYR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader focused on analog, embedded processing, and high-reliability power solutions for industrial, automotive, and communications markets.
The UCC23113DWYR belongs to TI's UCC231xx family of opto-compatible isolated gate drivers-engineered specifically to replace aging optocoupler-based solutions in high-efficiency, high-temperature motor and energy conversion systems.
FAQ
What is the maximum recommended output supply voltage for UCC23113DWYR?
The UCC23113DWYR supports a maximum output supply voltage (VDD – VEE) of 30 V, with recommended operating range from 13 V to 30 V. This enables bipolar gate drive configurations-for example, +15 V / –8 V for IGBTs or +20 V / –5 V for SiC MOSFETs-ensuring robust turn-on and Miller immunity without external level-shifting circuitry. Exceeding 30 V risks violating absolute maximum ratings.
Does UCC23113DWYR require an input power supply?
No, the UCC23113DWYR does not require an input power supply-the e-diode input stage operates solely on forward current (IF) injected between ANODE and CATHODE pins. A simple series resistor converts standard 3.3-V or 5-V PWM signals into the required 7–16 mA IF range. This eliminates input-side bias rails, simplifying PCB layout and reducing component count compared to digital-isolator-based gate drivers.
How does the active pulldown feature work in UCC23113DWYR?
When VDD is unpowered or below UVLO threshold, the UCC23113DWYR's internal active pulldown circuit clamps VOUT to <2 V by enabling a dedicated NMOS path tied to VOUT. This prevents unintended turn-on of the power device during startup, shutdown, or supply faults-without requiring external pull-down resistors or auxiliary bias supplies. The function is fully integrated and operates automatically based on VDD status.
Can UCC23113DWYR drive both high-side and low-side FETs?
Yes, the UCC23113DWYR is designed to drive both high-side and low-side power FETs. Its rail-to-rail output (VEE to VDD), 5-A peak sourcing/sinking capability, and bipolar supply support (e.g., VDD = +15 V, VEE = –8 V) allow direct connection to high-side IGBT gates referenced to phase voltage. Layout best practices-such as minimizing loop inductance and separating input/output grounds-must still be followed to maintain CMTI performance.
What is the creepage and clearance distance of the UCC23113DWYR DWY package?
The UCC23113DWYR in the stretched SOIC-6 (DWY) package provides >8.5 mm of both external creepage and external clearance-meeting reinforced insulation requirements per IEC 61800-5-1 and UL 1577. This spacing is achieved through molded package geometry and Material Group I mold compound (CTI >600 V), enabling use in 1000-V AC industrial bus applications without additional slotting or coating.
UCC23113DWYR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 6-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Optical Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 1500VDC
- Common Mode Transient Immunity (Min):
- 100V/ns
- Propagation Delay tpLH / tpHL (Max):
- 105ns, 105ns
- Pulse Width Distortion (Max):
- 35ns
- Rise / Fall Time (Typ):
- 28ns, 25ns (Max)
- Current - Output High, Low:
- 5A, 5A
- Current - Peak Output:
- 1A
- Voltage - Forward (Vf) (Typ):
- 2.1V
- Current - DC Forward (If) (Max):
- 1 A
- Voltage - Output Supply:
- 13V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-SOIC
- Approval Agency:
- -
UCC23113DWYR FAQ
1.How can I place an order for UCC23113DWYR through Aetrix?
Please submit a Request for Quotation (RFQ) for UCC23113DWYR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UCC23113DWYR reliable?
The price and inventory of UCC23113DWYR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC23113DWYR is usually 5 days.
3.What payment methods are accepted for UCC23113DWYR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UCC23113DWYR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UCC23113DWYR?
UCC23113DWYR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UCC23113DWYR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UCC23113DWYR?
For technical support, including UCC23113DWYR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC23113DWYR requirements.
6.How does Aetrix verify that UCC23113DWYR is sourced from the original manufacturer or authorized distributors?
All UCC23113DWYR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC23113DWYR meets industry standards.
7.What is the process for return or replacement of UCC23113DWYR?
All UCC23113DWYR units undergo pre-shipment inspection (PSI). If there is an issue with UCC23113DWYR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UCC23113DWYR part is unused and in its original packaging.
Return procedure for UCC23113DWYR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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