Texas Instruments UCC5304DWV

Overview

UCC5304DWV from Texas Instruments is a reinforced-isolation single-channel gate driver designed to drive power MOSFETs and GaNFETs in high-efficiency PFC, isolated AC/DC, and DC/DC converters. It delivers 4-A peak source and 6-A peak sink output current, features >100-V/ns common-mode transient immunity (CMTI), and operates across –40°C to +125°C ambient temperature with dual UVLO (5-V VDD, 2.7-V VCCI).

For engineers reviewing the UCC5304DWV datasheet, UCC5304DWV pinout, UCC5304DWV application, or UCC5304DWV equivalent, this page provides verified technical context on isolation barrier integrity, propagation delay (≤40 ns), active pull-down clamping (≤2.1 V), TTL/CMOS input compatibility, and SOIC-8 DWV package creepage (>8.5 mm) - all critical for high-noise industrial power stage design.

Technical Context

The UCC5304DWV integrates galvanically isolated signal transmission across a reinforced dielectric barrier using capacitive coupling, enabling independent primary (VCCI/GND) and secondary (VDD/VSS) supply domains. Its input stage employs TTL/CMOS-compatible thresholds (VINH = 1.8 V typ., VINL = 1.0 V typ.) with 0.8-V hysteresis and internal pull-down for open-input robustness.

The output stage combines a P-channel MOSFET (ROH = 5 Ω) and a transient-activated N-channel boost device (RNMOS ≈ 1.47 Ω) to achieve 4-A peak sourcing during Miller plateau, while a dedicated N-channel sink (ROL = 0.55 Ω) enables 6-A peak sinking. UVLO is implemented independently on both VCCI (2.7-V rising threshold) and VDD (5.5-V rising threshold), each with hysteresis and asymmetric power-up/power-down timing.

Key Specifications

Pinout & Package

UCC5304DWV is housed in an 8-pin SOIC package (DWV) with reinforced isolation barrier separating primary (input/control) and secondary (output/power) sides. Creepage and clearance exceed 8.5 mm, supporting 5-kVRMS isolation voltage and safety certifications including UL 1577 and planned VDE 0884-11.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Compared with Si8271BD-IS and ADUM4135BRWZ, the UCC5304DWV uniquely combines reinforced isolation, >100-V/ns CMTI, and active output clamping in a single SOIC-8 package - enabling safer, more compact designs in high-noise, high-reliability industrial power stages without external protection components.

Availability

UCC5304DWV is available at Aetrix Electronics and suitable for AC-DC converters, motor drives, and industrial transportation systems requiring stable component supply, long-term lifecycle support, and certified reinforced isolation.

Supply support for UCC5304DWV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with decades of leadership in high-reliability isolation solutions.

The UCC5304DWV belongs to TI's reinforced-isolation gate driver product line, engineered specifically for high-efficiency, high-density power conversion in industrial, automotive, and renewable energy systems where safety, noise immunity, and thermal robustness are critical.

FAQ

What is the maximum recommended VDD supply voltage for the UCC5304DWV?

The UCC5304DWV supports a VDD supply range of 6.0 V to 18 V, with absolute maximum rating of 20 V. Operation above 18 V risks exceeding safe operating area limits and may trigger overvoltage stress on internal output transistors. For optimal lifetime and thermal performance in continuous 12-V or 15-V gate drive applications, maintain VDD within the recommended range and use local 1-µF low-ESR decoupling to VSS.

Does the UCC5304DWV require external components for basic operation?

Yes - the UCC5304DWV requires external decoupling capacitors: a 0.1-µF ceramic capacitor from VCCI to GND and a 1-µF ceramic capacitor from VDD to VSS, placed as close as possible to their respective pins. No external pull-up/down resistors are needed on IN due to its internal 200-kΩ pull-down. Additional components like gate resistors or Miller clamps depend on the specific FET being driven and layout parasitics.

How does the UCC5304DWV handle undervoltage conditions on VDD and VCCI?

The UCC5304DWV implements independent UVLO circuits on both VDD (5.5-V rising threshold) and VCCI (2.7-V rising threshold), each with hysteresis. When either supply drops below its falling threshold, the output is actively pulled low within <1 µs. During power-up, output enablement is delayed by up to 59 µs (VCCI) or 35 µs (VDD) after UVLO crossing - ensuring stable bias before gate drive activation.

Can the UCC5304DWV drive both silicon MOSFETs and GaNFETs?

Yes - the UCC5304DWV is explicitly qualified for driving both silicon MOSFETs and GaNFETs. Its 4-A peak source and 6-A peak sink currents, low ROL (0.55 Ω), and Miller-boosted pull-up structure provide sufficient dV/dt immunity and gate charge delivery for fast-switching GaN devices (e.g., 650-V GaN HEMTs with Qg < 10 nC) as well as high-Qg silicon MOSFETs used in PFC and LLC stages.

What safety certifications apply to the UCC5304DWV?

The UCC5304DWV is certified to UL 1577 (5000 VRMS, 1-min withstand) and is planned for certification to DIN V VDE V 0884-11:2017-01 (reinforced insulation) and GB 4943.1-2011. Its DWV package achieves >8.5-mm creepage/clearance and 17-µm internal barrier thickness, meeting reinforced isolation requirements for industrial equipment operating up to 400-VAC mains voltage.