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Texas Instruments UCC5390ECQDWVQ1
- Part No.:
- UCC5390ECQDWVQ1
- Manufacturer:
- Texas Instruments
- Category:
- Isolators - Gate Drivers
- Package:
- 8-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
UCC5390ECQDWVQ1.pdf
- Description:
- DGTL ISO 5KV 1CH GATE DVR 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,884
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Product details
Overview
UCC5390ECQDWVQ1 from Texas Instruments is a single-channel, SiO₂-based capacitive isolated gate driver optimized for automotive-grade SiC MOSFETs and IGBTs. It delivers 10A peak source/sink current, features 5kVRMS isolation (UL 1577), 100V/ns minimum CMTI, 60ns typical propagation delay, and UVLO referenced to GND2 - enabling robust bipolar gate control in traction inverters and on-board chargers.
For engineers reviewing the UCC5390ECQDWVQ1 datasheet, UCC5390ECQDWVQ1 pinout, UCC5390ECQDWVQ1 application, or UCC5390ECQDWVQ1 equivalent, this page provides verified functional safety–managed specs, AEC-Q100 Grade 1 qualification details, DWV package creepage validation, and real-world switching performance data for EV power stage design.
Technical Context
The UCC5390ECQDWVQ1 implements on-off keying (OOK) modulation across a SiO₂ capacitive isolation barrier, supporting >40-year lifetime isolation with 7000VPK transient rating. Its dual UVLO architecture - VCC1-referenced (2.6V/2.4V thresholds) and GND2-referenced VCC2 UVLO (13V/11V) - enables stable bipolar supply operation for SiC and IGBT gate control.
Input logic uses CMOS-compatible thresholds (0.55×VCC1 high, 0.45×VCC1 low) with 0.1×VCC1 hysteresis and internal 128kΩ pull-down/pull-up resistors. Output stage combines P- and N-channel MOSFETs for dynamic peak sourcing during Miller plateau, achieving 10A pulse capability with rail-to-rail swing between VCC2 (up to 33V) and VEE2 (down to –16V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 5000VRMS (1 min UL 1577); 7000VPK transient per VDE 0884-11 - meets reinforced insulation requirements for automotive traction systems. |
| Peak Output Current | 10A source/sink - sufficient to drive high-Qg SiC MOSFETs (e.g., 100nC) with fast turn-on/turn-off in <100ns. |
| Propagation Delay | 65–100ns (typ 60ns) - enables precise timing control in 10–20kHz traction inverter PWM loops. |
| CMTI | ≥100kV/µs - suppresses false triggering under high dV/dt noise in 800V+ battery systems. |
| Supply Range | VCC1: 3–15V; VCC2/VEE2: up to 33V/–16V - supports unipolar (15V/0V) or bipolar (15V/–8V or 20V/–5V) gate bias for SiC/IGBT optimization. |
| Operating Temperature | –40°C to +150°C junction - qualified per AEC-Q100 Grade 1 for under-hood automotive environments. |
| Package | DWV (SOIC-8, 7.5mm × 5.85mm) with ≥8.5mm creepage - meets IPC-2221B clearance requirements for 800V DC bus isolation. |
Pinout & Package
UCC5390ECQDWVQ1 is housed in an 8-pin SOIC package (DWV) with 8.5mm creepage and reinforced insulation per DIN V VDE V 0884-11 and UL 1577. The package supports surface-mount assembly and thermal dissipation via PCB copper area (RθJA = 119.8°C/W on high-K test board).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC1 | Input-side power supply | 3–15V supply for logic side; decoupling capacitor required at pin for noise immunity. |
| IN+ | Noninverting input | CMOS threshold (0.55×VCC1); pulled low internally if open - used for PWM enable or direct logic-level drive. |
| IN– | Inverting input | CMOS threshold (0.45×VCC1); pulled high internally if open - enables differential input configuration or active-low control. |
| GND1 | Input ground reference | Reference for all input signals and VCC1; must be separated from power ground to maintain isolation integrity. |
| VCC2 | Positive output supply | Up to 33V positive rail for gate drive; UVLO2 referenced to GND2 ensures safe turn-off during supply sag. |
| OUT | Gate-drive output | Push-pull output capable of 10A pulses; rail-to-rail swing between VCC2 and VEE2 enables full gate voltage utilization. |
| GND2 | Output common / emitter reference | Reference for UVLO2 and gate output; connects directly to IGBT emitter or SiC source - critical for Miller immunity. |
| VEE2 | Negative output supply | Up to –16V negative rail; enables active Miller clamp and negative gate bias to prevent spurious turn-on. |
Key Features
| Feature | Design Value |
|---|---|
| SiO₂ capacitive isolation | 5kVRMS rated, >40-year barrier lifetime - eliminates LED aging and CTR drift issues found in optocouplers. |
| Bipolar UVLO architecture | VCC2 UVLO referenced to GND2 - ensures reliable gate shutdown even during high-side floating node transients. |
| Dynamic peak-current boost | N-channel parallel pull-up delivers brief 10A surge during Miller plateau - reduces SiC turn-on time by ~30% vs fixed ROH drivers. |
| Input overvoltage tolerance | IN± withstands –5V below GND1 - accommodates controller-side ESD events without external clamping diodes. |
| AEC-Q100 Grade 1 qualification | Rated for –40°C to +125°C ambient; HBM ±4kV / CDM ±1.5kV ESD - validated for automotive powertrain deployment. |
Applications
| On-Board Charger (OBC) | Traction Inverter |
|---|---|
Use Scenario: Bidirectional AC/DC conversion in 11–22kW EV on-board chargers using SiC MOSFET half-bridges. IC Role / Device Role / Timing Role: Isolated gate driver controlling high-side/lower-side SiC switches with synchronized dead-time management. Use Value: 100V/ns CMTI prevents false triggering during 1000V bus switching; bipolar –5V/20V gate bias minimizes conduction loss and improves efficiency by >1.2%. |
Use Scenario: High-power motor control in 400V/800V electric vehicle traction inverters driving permanent magnet synchronous motors. IC Role / Device Role / Timing Role: Single-channel isolated driver per switch leg, enabling independent gate control and fault isolation in multi-phase inverters. Use Value: 60ns propagation delay and <25ns part-to-part skew ensure precise phase alignment across 3-phase legs; 150°C junction rating supports compact heatsink designs. |
| DC Fast Charging Station | Industrial Motor Drive |
Use Scenario: Front-end rectification and DC-link regulation in 150–350kW liquid-cooled charging stations using SiC modules. IC Role / Device Role / Timing Role: Gate driver for 1200V SiC half-bridge modules operating at 50–100kHz switching frequency. Use Value: 7000VPK transient isolation withstands lightning-induced surges on grid-connected equipment; 10A peak current drives 300nC gate charge with <150ns total transition time. |
Use Scenario: High-reliability variable-frequency drives for HVAC compressors and industrial pumps requiring long service life and thermal resilience. IC Role / Device Role / Timing Role: Isolated gate driver for 650V/1200V IGBTs in 3-phase inverter stages with integrated Miller clamp. Use Value: Negative 5V handling on IN± pins simplifies interface with legacy 5V microcontrollers; AEC-Q100 qualification extends field reliability beyond standard industrial temperature grades. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si827x series (e.g., Si8273BD-IS) | 3.75kVRMS isolation; 4A peak drive; 100ns propagation delay; no bipolar VEE2 support | Limited to unipolar gate bias; lower CMTI (35kV/µs); not AEC-Q100 qualified | Acceptable for cost-sensitive industrial inverters where 800V bus dV/dt is <50V/ns and automotive qualification is not required. |
| ISO5852S-Q1 | 5.7kVRMS isolation; 2.5A peak drive; 105ns propagation delay; integrated Miller clamp | Lower drive strength limits SiC gate charge handling; lacks negative input tolerance and VEE2 flexibility | Suitable for IGBT-based traction inverters with moderate Qg (<50nC); preferred when integrated Miller clamp is prioritized over peak current. |
Compared with Si8273BD-IS and ISO5852S-Q1, the UCC5390ECQDWVQ1 uniquely combines AEC-Q100 Grade 1 qualification, 10A peak drive, bipolar VEE2 support, and –5V input tolerance - making it the only option qualified for high-power SiC traction inverters demanding both robustness and dynamic gate control.
Availability
UCC5390ECQDWVQ1 is available at Aetrix Electronics and suitable for automotive traction inverters, on-board chargers, and DC fast charging stations requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.
Supply support for UCC5390ECQDWVQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with deep expertise in automotive-grade isolation and high-reliability power solutions.
The UCC5390-Q1 product line was designed specifically for next-generation electric vehicle power systems, targeting SiC and IGBT gate driving in AEC-Q100–compliant traction, charging, and energy storage applications.
FAQ
What is the isolation voltage rating of the UCC5390ECQDWVQ1 and which standards does it meet?
The UCC5390ECQDWVQ1 has a 5000VRMS isolation rating for 1 minute per UL 1577 and a 7000VPK transient isolation voltage per DIN V VDE V 0884-11:2017-01. It also holds CQC certification per GB4943.1-2011. These ratings apply specifically to the DWV package and are validated for reinforced insulation in automotive applications - confirming its suitability for 800V battery system isolation barriers in the UCC5390ECQDWVQ1.
Does the UCC5390ECQDWVQ1 support bipolar gate drive for SiC MOSFETs, and how is it implemented?
Yes, the UCC5390ECQDWVQ1 supports bipolar gate drive via separate VCC2 (positive) and VEE2 (negative) output supply pins, with UVLO2 referenced to GND2. This allows configurations such as +20V/–5V for SiC MOSFETs, ensuring strong turn-on and reliable Miller immunity. The UCC5390ECQDWVQ1's output stage delivers rail-to-rail swing between these rails, and its 10A peak current sustains fast transitions even under high gate charge loads - a core capability of the UCC5390ECQDWVQ1.
What is the significance of GND2-referenced UVLO2 in the UCC5390ECQDWVQ1?
GND2-referenced UVLO2 ensures that gate drive remains disabled when the output-side supply collapses relative to the power device's emitter/source - a critical failure mode in high-side switching. Unlike input-referenced UVLO, this architecture guarantees safe turn-off during floating-node supply faults. This behavior is explicitly specified for the UCC5390ECQDWVQ1 and directly enables robust operation in half-bridge and three-phase inverter topologies where GND2 tracks the switching node.
Can the UCC5390ECQDWVQ1 drive both IGBTs and SiC MOSFETs, and what design adaptations are needed?
Yes, the UCC5390ECQDWVQ1 is explicitly designed for both IGBTs and SiC MOSFETs. For IGBTs, use +15V/–8V gate bias; for SiC MOSFETs, use +20V/–5V. The UCC5390ECQDWVQ1's 10A peak current, 100V/ns CMTI, and bipolar supply support accommodate the higher dV/dt and lower Qg of SiC devices while maintaining ruggedness for IGBT Miller clamping. No external components are required to switch between these modes - all adaptations are implemented via supply rail configuration on the UCC5390ECQDWVQ1.
How does the UCC5390ECQDWVQ1 achieve its 10A peak output current specification?
The UCC5390ECQDWVQ1 achieves 10A peak sourcing via a dynamic parallel structure: a primary P-channel MOSFET (ROH = 12Ω) combined with a brief-turn-on N-channel MOSFET (RNMOS = 0.76Ω) during the Miller plateau. This lowers effective on-resistance to ~0.7Ω during critical turn-on, delivering high instantaneous current without increasing steady-state losses. This architecture is validated in the UCC5390ECQDWVQ1's electrical characteristics table and confirmed in TI's application notes for SiC gate driving.
UCC5390ECQDWVQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 120kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 60ns, 60ns
- Pulse Width Distortion (Max):
- 20ns
- Rise / Fall Time (Typ):
- 10ns, 10ns
- Current - Output High, Low:
- 17A, 17A
- Current - Peak Output:
- 10A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 13.2V ~ 33V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 150°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
- Approval Agency:
- CQC, UL, VDE
UCC5390ECQDWVQ1 FAQ
1.How can I place an order for UCC5390ECQDWVQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UCC5390ECQDWVQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UCC5390ECQDWVQ1 reliable?
The price and inventory of UCC5390ECQDWVQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC5390ECQDWVQ1 is usually 5 days.
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UCC5390ECQDWVQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UCC5390ECQDWVQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UCC5390ECQDWVQ1?
For technical support, including UCC5390ECQDWVQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC5390ECQDWVQ1 requirements.
6.How does Aetrix verify that UCC5390ECQDWVQ1 is sourced from the original manufacturer or authorized distributors?
All UCC5390ECQDWVQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC5390ECQDWVQ1 meets industry standards.
7.What is the process for return or replacement of UCC5390ECQDWVQ1?
All UCC5390ECQDWVQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UCC5390ECQDWVQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UCC5390ECQDWVQ1 part is unused and in its original packaging.
Return procedure for UCC5390ECQDWVQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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