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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Renesas UPA1716G-E2-A

Name: UPA1716G-E2-A
Brand: Renesas
SKU: UPA1716G-E2-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA1716G-E2-A

Manufacturer:: Renesas

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: UPA1716G-E2-A.pdf

Description:: TRANSISTOR

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Product details

Overview

UPA1716G-E2-A from Renesas Electronics is a P-channel enhancement-mode power MOSFET designed for high-efficiency DC/DC converter and notebook computer power management circuits. It delivers 12.5 mΩ typical R_DS(on) at V_GS = –10 V, –4 A drain current, supports –30 V drain-to-source voltage, and features integrated gate-source ESD protection diode in Power SOP8 package.

For engineers reviewing the UPA1716G-E2-A datasheet, UPA1716G-E2-A pinout, UPA1716G-E2-A application, or UPA1716G-E2-A equivalent, key selection criteria include low-voltage gate drive capability (R_DS(on) = 17.0 mΩ @ V_GS = –4.5 V), fast switching (t_d(off) = 120 ns), and thermal performance on ceramic substrate (R_th(ch–A) = 62.5 °C/W).

Technical Context

This device operates as a synchronous rectifier or high-side load switch in buck converters and battery protection circuits. Its P-channel topology enables simple gate drive without bootstrap circuitry, and its low C_iss (2100 pF typ.) reduces switching losses at high frequencies up to several hundred kHz.

The built-in gate-source protection diode guards against ESD events, but external transient suppression remains required for system-level robustness. The device's V_GS(off) range (–1.0 to –2.5 V) ensures reliable turn-off under varying temperature conditions (T_ch up to 150 °C) and supports stable operation across industrial ambient ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–30 V - Supports input rails up to 24 V DC/DC stages with margin for transients.
R_DS(on) @ V_GS = –10 V	12.5 mΩ typ. - Enables ≤50 mW conduction loss at 4 A, critical for thermally constrained notebook PCBs.
R_DS(on) @ V_GS = –4.5 V	17.0 mΩ typ. - Allows direct interface with 5 V logic or low-voltage microcontroller GPIO without level shifters.
C_iss	2100 pF typ. - Limits gate drive power and enables efficient 300–500 kHz switching with standard drivers.
Q_G	40 nC - Determines gate driver current requirement (e.g., 4 mA avg. at 100 kHz, 50% duty).
T_ch max	150 °C - Defines maximum junction temperature for SOA-limited continuous operation on ceramic substrate.
I_D(DC)	8 A - Sets steady-state current capability for high-current power rail switching or OR-ing applications.

Pinout & Package

UPA1716G-E2-A is housed in Power SOP8 (also known as PSOP8 or SOP-8L), a surface-mount package with exposed drain pad for thermal dissipation. Dimensions: 6.0 mm × 4.4 mm × 1.8 mm max, lead pitch 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; tied to ground or negative rail in high-side switch configuration.
4	Gate	Control terminal; requires negative voltage relative to source to turn on; protected by internal Zener diode.
5, 6, 7, 8	Drain	Main power output node; electrically and thermally connected to exposed backside pad for heat transfer to PCB copper.

Key Features

Feature	Design Value
Low R_DS(on) at low V_GS	17.0 mΩ @ –4.5 V enables direct MCU-level control without gate driver ICs in space-constrained designs.
Integrated G–S protection diode	Clamps gate voltage to ±20 V, reducing need for external TVS in board-level ESD protection schemes.
Fast switching speed	120 ns t_d(off) + 76 ns t_f supports high-frequency PWM operation while minimizing overlap loss in synchronous rectifiers.
Body diode with low Q_rr	33 nC reverse recovery charge minimizes shoot-through risk and improves efficiency in freewheeling paths.
Thermally enhanced package	Exposed drain pad lowers thermal resistance (R_th(ch–A) = 62.5 °C/W on 1200 mm² ceramic), enabling 2.0 W continuous dissipation.

Applications

DC/DC Synchronous Rectifier	Notebook CPU Core Voltage Regulator
Use Scenario: Replaces Schottky diode in secondary side of buck converter to reduce conduction loss and improve efficiency above 85%. IC Role / Device Role / Timing Role: P-channel MOSFET operating as low-side synchronous rectifier, driven by controller's complementary output. Use Value: 12.5 mΩ R_DS(on) cuts forward drop to ~50 mV at 4 A, reducing rectifier loss by >60% vs. 0.4 V Schottky diode.	Use Scenario: High-side load switch controlling 1.2 V/15 A CPU core rail during sleep/wake transitions. IC Role / Device Role / Timing Role: P-channel power switch controlled by PMIC enable signal; handles inrush current and fault isolation. Use Value: 8 A I_D(DC) rating and –30 V V_DSS provide margin for 1.2 V rail transients and long-term reliability under thermal cycling.
Battery Protection Circuit	Hot-Swap OR-ing Controller
Use Scenario: Reverse-polarity and overcurrent protection in 3-cell Li-ion battery packs (12.6 V max). IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (one per UPA1716G-E2-A) configured for bidirectional blocking and fast shutdown. Use Value: 17.0 mΩ R_DS(on) @ –4.5 V allows use of single 5 V supply for gate drive, simplifying protection IC interface.	Use Scenario: Redundant 12 V power supply OR-ing in embedded industrial controllers to prevent backfeed and ensure seamless switchover. IC Role / Device Role / Timing Role: High-side P-MOSFET acting as ideal diode, controlled by dedicated OR-ing controller (e.g., LTC4352). Use Value: Low Q_rr (33 nC) and fast t_f (76 ns) minimize cross-conduction during switchover, preventing bus collapse.

DC/DC Synchronous Rectifier

Notebook CPU Core Voltage Regulator

Use Scenario: Replaces Schottky diode in secondary side of buck converter to reduce conduction loss and improve efficiency above 85%.

IC Role / Device Role / Timing Role: P-channel MOSFET operating as low-side synchronous rectifier, driven by controller's complementary output.

Use Value: 12.5 mΩ R_DS(on) cuts forward drop to ~50 mV at 4 A, reducing rectifier loss by >60% vs. 0.4 V Schottky diode.

Use Scenario: High-side load switch controlling 1.2 V/15 A CPU core rail during sleep/wake transitions.

IC Role / Device Role / Timing Role: P-channel power switch controlled by PMIC enable signal; handles inrush current and fault isolation.

Use Value: 8 A I_D(DC) rating and –30 V V_DSS provide margin for 1.2 V rail transients and long-term reliability under thermal cycling.

Battery Protection Circuit

Hot-Swap OR-ing Controller

Use Scenario: Reverse-polarity and overcurrent protection in 3-cell Li-ion battery packs (12.6 V max).

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (one per UPA1716G-E2-A) configured for bidirectional blocking and fast shutdown.

Use Value: 17.0 mΩ R_DS(on) @ –4.5 V allows use of single 5 V supply for gate drive, simplifying protection IC interface.

Use Scenario: Redundant 12 V power supply OR-ing in embedded industrial controllers to prevent backfeed and ensure seamless switchover.

IC Role / Device Role / Timing Role: High-side P-MOSFET acting as ideal diode, controlled by dedicated OR-ing controller (e.g., LTC4352).

Use Value: Low Q_rr (33 nC) and fast t_f (76 ns) minimize cross-conduction during switchover, preventing bus collapse.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-GE3	R_DS(on) = 115 mΩ @ –4.5 V; smaller SOT-23 package; lower I_D(DC) (2.6 A).	Suitable only for <2 A loads; insufficient for notebook CPU rail or DC/DC rectification.	Select when board space is critical and current demand is ≤2 A; not a functional replacement for UPA1716G-E2-A.
IRF7425PBF	R_DS(on) = 29 mΩ @ –4.5 V; SO-8 package; higher Q_G (55 nC); no integrated G–S diode.	Requires external gate protection; higher conduction loss impacts thermal design in 4–8 A applications.	Choose if legacy IR footprint compatibility is required and 29 mΩ R_DS(on) is acceptable for target efficiency targets.

Compared with Si2301DDS-T1-GE3 and IRF7425PBF, the UPA1716G-E2-A offers superior low-V_GS on-resistance (17.0 mΩ), integrated ESD protection, and optimized thermal performance for 4–8 A industrial and computing power stages - making it uniquely suited for thermally dense notebook and embedded DC/DC designs.

Availability

UPA1716G-E2-A is available at Aetrix Electronics and suitable for DC/DC converters, notebook power management systems, and battery protection circuits requiring stable component supply and long-term industrial availability.

Supply support for UPA1716G-E2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and computing markets.

The UPA1716G-E2-A belongs to Renesas' legacy Power MOSFET product line, engineered specifically for high-efficiency, low-voltage power conversion in portable and space-constrained computing equipment.

FAQ

What is the maximum continuous drain current rating for UPA1716G-E2-A?

The UPA1716G-E2-A has a maximum continuous drain current (I_D(DC)) rating of 8 A at T_A = 25 °C when mounted on a 1200 mm² ceramic substrate. Derating applies above 25 °C ambient; at 70 °C, usable current drops to approximately 4.5 A based on thermal resistance (R_th(ch–A) = 62.5 °C/W) and 150 °C channel limit. Always verify layout thermal performance in final design.

Does UPA1716G-E2-A require an external gate resistor for safe switching?

Yes - while the UPA1716G-E2-A can operate without a gate resistor, a series gate resistor (typically 5–22 Ω) is recommended to dampen ringing, control dV/dt, and limit peak gate current during fast transitions. The datasheet specifies switching times using RG = 10 Ω; omitting it may cause overshoot, EMI, or gate driver stress. For UPA1716G-E2-A, this is especially important given its 40 nC total gate charge and 2100 pF input capacitance.

Can UPA1716G-E2-A be used in linear regulation mode?

No - the UPA1716G-E2-A is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) graph shows pulse-limited capability only, with no DC SOA curve. Continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient thermal design margin. Use only in switching applications per its specified DC/DC converter and power management role.

Is the body diode in UPA1716G-E2-A suitable for reverse recovery in high-frequency applications?

Yes - the UPA1716G-E2-A body diode exhibits trr = 45 ns and Q_rr = 33 nC under IF = 8 A, di/dt = 100 A/µs conditions, making it suitable for synchronous rectification in buck converters operating up to ~1 MHz. However, its softness factor is not specified; for critical zero-voltage-switching (ZVS) topologies, consult Renesas application notes or validate with bench testing using actual UPA1716G-E2-A units.

What is the gate-to-source voltage limit for UPA1716G-E2-A, and why does it matter?

The UPA1716G-E2-A specifies a maximum gate-to-source voltage (V_GS) of ±20 V. Exceeding this - even briefly - risks permanent gate oxide damage. This limit matters because the device includes an internal gate-source Zener diode for ESD protection, but that diode clamps only up to ~20 V and is not rated for sustained overvoltage. Always ensure gate drive circuits (e.g., microcontroller outputs, level shifters) stay within –20 V to +20 V relative to source when using UPA1716G-E2-A.

UPA1716G-E2-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPA1716G-E2-A FAQ

1.How can I place an order for UPA1716G-E2-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA1716G-E2-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA1716G-E2-A reliable?

The price and inventory of UPA1716G-E2-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1716G-E2-A is usually 5 days.

3.What payment methods are accepted for UPA1716G-E2-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1716G-E2-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA1716G-E2-A?

UPA1716G-E2-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA1716G-E2-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA1716G-E2-A?

For technical support, including UPA1716G-E2-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1716G-E2-A requirements.

6.How does Aetrix verify that UPA1716G-E2-A is sourced from the original manufacturer or authorized distributors?

All UPA1716G-E2-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1716G-E2-A meets industry standards.

7.What is the process for return or replacement of UPA1716G-E2-A?

All UPA1716G-E2-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA1716G-E2-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA1716G-E2-A part is unused and in its original packaging.

Return procedure for UPA1716G-E2-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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