Renesas UPA509TA-T2-A
- Part No.:
- UPA509TA-T2-A
- Manufacturer:
- Renesas
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA509TA-T2-A.pdf
- Description:
- RF MOSFET
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Inventory:3,000
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Product details
Overview
UPA509TA-T2-A from Renesas Electronics is a composite NPN bipolar transistor and N-channel JFET in a single SC-74A package, designed for high-frequency amplifier stages in AM radio receivers and audio-frequency amplifiers. It delivers IDSS of 10–30 mA (typ. 20 mA), VGS(off) of −1.1 to −2.5 V, hFE of 135–400, and fT of 250 MHz.
For engineers reviewing the UPA509TA-T2-A datasheet, UPA509TA-T2-A pinout, UPA509TA-T2-A application, or UPA509TA-T2-A equivalent, key selection criteria include its dual-device integration, low-noise performance (NV = 16.8 mV), matched gain-bandwidth and transconductance characteristics, and suitability for compact RF front-end and IF amplifier designs requiring minimal board space.
Technical Context
The UPA509TA-T2-A integrates a silicon junction FET and epitaxial NPN transistor sharing thermal and layout advantages within one die. Its JFET section operates with VDSX = 22 V and IDSS = 10–30 mA, while the NPN section supports VCEO = 50 V and IC(pulse) = 200 mA. Both devices share a common PT = 300 mW rating at TA = 25°C.
It features two independent active elements with separate terminals: Gate (Pin 5), Source (Pin 1), Drain/Emitter (Pin 2), Base (Pin 3), and Collector (Pin 4). The device is optimized for linear amplification-not switching-with low input capacitance (Ciss = 8.3 pF) and feedback capacitance (Crss = 2.75 pF), enabling stable high-frequency operation up to ~250 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IDSS | 10–30 mA: Sets JFET bias point and gain linearity in RF/IF amplifier stages |
| VGS(off) | −1.1 to −2.5 V: Defines gate voltage threshold for JFET channel cutoff |
| hFE | 135–400: Enables high-current gain in low-voltage NPN amplifier configurations |
| fT | 250 MHz: Supports stable small-signal amplification up to VHF band |
| NV | 16.8 mV (10 Hz–1 kHz): Low noise floor suitable for AM receiver front ends |
| Ciss / Crss | 8.3 pF / 2.75 pF: Minimizes Miller effect and ensures broadband stability |
| PT (total) | 300 mW: Shared power budget constrains simultaneous FET + BJT dissipation |
Pinout & Package
UPA509TA-T2-A is housed in an SC-74A (SOT-457) surface-mount plastic package measuring 2.9 × 1.5 × 1.1 mm, with gull-wing leads and ESD-sensitive handling requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source (JFET) | Reference node for JFET channel; tied to ground or bias network in common-source amps |
| 2 | Drain (JFET) / Emitter (NPN) | Shared terminal: JFET output and NPN emitter-requires careful AC coupling or DC bias isolation |
| 3 | Base (NPN) | Controls NPN current flow; requires current-limiting resistor in linear amplifier use |
| 4 | Collector (NPN) | High-impedance NPN output node; used for voltage gain stage or cascode configuration |
| 5 | Gate (JFET) | High-impedance JFET control; must be DC-biased via high-value resistor to avoid leakage-induced drift |
Key Features
| Feature | Design Value |
|---|---|
| Composite JFET + NPN structure | Enables cascode or cascade amplifier topologies in one footprint, reducing parasitic interconnects |
| Low noise voltage (16.8 mV) | Meets sensitivity requirements for AM broadcast band front-end amplifiers |
| Matched thermal tracking | Minimizes gain drift between FET and BJT sections under varying ambient conditions |
| SC-74A package compatibility | Supports automated SMT assembly and fits standard 0.95 mm pitch PCB layouts |
| ESD-sensitive handling | Requires grounded workstations and anti-static packaging-critical for production yield |
Applications
| AM Radio Front-End Amplifier | IF Amplifier Stage |
|---|---|
Use Scenario: Signal amplification of 455 kHz intermediate frequency signals in superheterodyne AM radios. IC Role / Device Role / Timing Role: Dual-stage amplifier: JFET provides high-input-impedance preamp; NPN delivers gain and drive capability. Use Value: Integrated topology eliminates interstage coupling capacitors and reduces board area by ~35% vs. discrete solutions. | Use Scenario: High-selectivity amplification after mixer output in portable AM receivers. IC Role / Device Role / Timing Role: Cascode-configured amplifier using JFET as input and NPN as output stage for improved bandwidth and isolation. Use Value: Crss = 2.75 pF and fT = 250 MHz enable stable gain at 455 kHz with <1 dB ripple across ±5 kHz passband. |
| Audio Frequency Preamp | RF Detector Bias Generator |
Use Scenario: Low-noise microphone preamplifier in battery-powered voice recorders. IC Role / Device Role / Timing Role: NPN section biased in Class-A for linear audio amplification; JFET used for impedance transformation. Use Value: hFE ≥135 and NV = 16.8 mV support SNR >62 dB over 20 Hz–20 kHz with single 3.3 V supply. | Use Scenario: Generating stable DC bias for envelope detectors in AM demodulation circuits. IC Role / Device Role / Timing Role: JFET acts as constant-current source; NPN provides regulated output voltage reference. Use Value: IDSS tolerance (±10 mA) and VBE(sat) = 0.15–0.3 V ensure repeatable detector operating point across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-transistor amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UPA508TA-T2-A | IDSS = 5–15 mA (lower gain), fT = 200 MHz, same SC-74A package | Better suited for low-power IF stages where lower noise floor is prioritized over gain | Select when design requires reduced IDSS spread and tighter VGS(off) tolerance (−1.5 to −2.2 V) |
| 2SC5007 | Discrete NPN only, no integrated JFET; TO-92 package; VCEO = 60 V, fT = 250 MHz | Requires external JFET and additional PCB area; lacks thermal coupling benefit | Choose only if legacy through-hole assembly or higher voltage margin (>50 V) is mandatory |
Compared with UPA509TA-T2-A, UPA508TA-T2-A offers lower IDSS and tighter parameter distribution for precision IF gain control, while 2SC5007 provides higher VCEO but sacrifices integration, noise performance, and thermal matching-making UPA509TA-T2-A optimal for space-constrained AM receiver signal chains.
Availability
UPA509TA-T2-A is available at Aetrix Electronics and suitable for AM radio front-end amplifiers, IF amplifier stages, audio frequency preamps, and RF detector bias generators requiring stable component supply and long-term obsolescence management.
Supply support for UPA509TA-T2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and discrete power devices.
The UPA509TA-T2-A belongs to Renesas' legacy RF transistor family targeting consumer-grade AM/FM receiver systems, emphasizing compact integration, low-noise amplification, and cost-effective SMT manufacturability.
FAQ
What is the maximum drain-to-source voltage rating for the JFET section of UPA509TA-T2-A?
The JFET section of UPA509TA-T2-A has a maximum drain-to-source voltage (VDSX) rating of 22 V at TA = 25°C. This rating applies under continuous DC conditions and must be derated linearly above 25°C ambient per the device's thermal resistance curve. Exceeding VDSX risks permanent breakdown of the JFET channel. Always verify operating VDS in UPA509TA-T2-A circuits remains below this limit with margin.
Can UPA509TA-T2-A be used in a cascode amplifier configuration?
Yes, UPA509TA-T2-A is explicitly suited for cascode use: its JFET (Pin 5→1→2) serves as the input stage, and its NPN (Pin 3→2→4) functions as the output stage, with Pin 2 shared as drain/emitter. This configuration leverages the JFET's high input impedance and the NPN's high output impedance, achieving wide bandwidth and improved reverse isolation-key for stable IF amplification in UPA509TA-T2-A-based receiver designs.
What is the typical noise voltage specification for UPA509TA-T2-A and how is it measured?
The typical noise voltage (NV) of UPA509TA-T2-A is 16.8 mV rms, measured across a 10 Hz to 1 kHz bandwidth with VDS = 6–7 V, ID = 0.5 mA, and RG = 1.0 kΩ, per the test circuit in Renesas Document G17694EJ1V0DS. This value reflects low-frequency flicker and thermal noise relevant to AM broadcast band reception, making UPA509TA-T2-A appropriate for sensitive front-end amplifiers where SNR is critical.
Is UPA509TA-T2-A RoHS compliant?
UPA509TA-T2-A complies with EU RoHS Directive 2011/65/EU as confirmed by Renesas Electronics' environmental documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. For full compliance data-including substance declarations and exemptions-refer to Renesas' official material declaration for UPA509TA-T2-A on their website.
What is the recommended storage temperature range for UPA509TA-T2-A?
The specified storage temperature range for UPA509TA-T2-A is −55 °C to +150 °C, per Renesas' Absolute Maximum Ratings table. Devices must be stored in dry, ESD-protected packaging away from direct sunlight and corrosive atmospheres. Long-term storage above +40 °C or in >60% RH may degrade solderability or internal passivation-always observe Renesas' handling guidance for UPA509TA-T2-A prior to reflow.
UPA509TA-T2-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Configuration:
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- Frequency:
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- Gain:
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- Voltage - Test:
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- Current Rating (Amps):
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- Noise Figure:
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- Current - Test:
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- Power - Output:
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- Voltage - Rated:
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UPA509TA-T2-A FAQ
1.How can I place an order for UPA509TA-T2-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA509TA-T2-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA509TA-T2-A reliable?
The price and inventory of UPA509TA-T2-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA509TA-T2-A is usually 5 days.
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Once your UPA509TA-T2-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA509TA-T2-A?
For technical support, including UPA509TA-T2-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA509TA-T2-A requirements.
6.How does Aetrix verify that UPA509TA-T2-A is sourced from the original manufacturer or authorized distributors?
All UPA509TA-T2-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA509TA-T2-A meets industry standards.
7.What is the process for return or replacement of UPA509TA-T2-A?
All UPA509TA-T2-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA509TA-T2-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA509TA-T2-A part is unused and in its original packaging.
Return procedure for UPA509TA-T2-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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