Renesas UPD166101GR-E1-AZ

Overview

UPD166101GR-E1-AZ from Renesas Electronics is a dual-channel N-channel low-side intelligent power switch for solenoid and lamp loads, featuring built-in current limiting (1 A), thermal shutdown (150°C), dynamic clamp circuitry, 160 mΩ R_DS(ON) at 5 V input, and Power SOP-8 surface-mount packaging. It operates with 3–7 V logic inputs and supports up to 40 V output voltage.

For engineers reviewing the UPD166101GR-E1-AZ datasheet, UPD166101GR-E1-AZ pinout, UPD166101GR-E1-AZ application, or UPD166101GR-E1-AZ equivalent, key selection criteria include channel independence, self-limiting DC output current, thermal auto-restart behavior, and compatibility with microcontroller-driven inductive loads in automotive body electronics and industrial control systems.

Technical Context

The UPD166101GR-E1-AZ integrates two independent low-side driver channels, each with dedicated GND pins (GND1, GND2), enabling isolated current sensing and thermal management per channel. Each channel implements a current-limit circuit that clamps output current at ~1 A under VIN = 3 V, and a thermal shutdown circuit that disables the channel above 150°C channel temperature and automatically recovers upon cooling.

It features a dynamic clamp circuit to suppress inductive kickback during turn-off, eliminating external flyback diodes for solenoid/lamp loads. Input logic is CMOS-compatible with VIH ≥ 3 V and VIL ≤ 1.5 V at 25°C, and propagation delays are specified as ton = 120 μs, toff = 200 μs, tr = 80 μs, tf = 80 μs under standard test conditions (VCC = 18 V, RL = 22 Ω).

Key Specifications

Pinout & Package

UPD166101GR-E1-AZ uses the Power SOP-8 package (6.0 mm × 4.4 mm × 1.8 mm max), optimized for thermal dissipation on PCBs with copper pads. The package includes exposed thermal pad connected internally to GND terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side intelligent power switch applications.

Compared with UPD166101GR-E1-AZ, the TPS27082LDRBR offers lower standby current but lacks dual-channel integration and dynamic clamp; the STLD201SGTR supports higher bus voltage but requires external protection, increasing design complexity and footprint.

Availability

UPD166101GR-E1-AZ is available at Aetrix Electronics and suitable for automotive body electronics, industrial solenoid control, appliance motor interface, commercial lighting control, and HVAC actuator applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for UPD166101GR-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The UPD166101GR-E1-AZ belongs to Renesas' legacy intelligent power device family designed specifically for robust, protected low-side switching of solenoids and lamps in harsh environments - emphasizing thermal resilience, integrated protection, and simplified system design.

FAQ

What is the maximum continuous output current per channel for UPD166101GR-E1-AZ?

The UPD166101GR-E1-AZ features self-limiting output current with a typical limit of 1 A per channel at VIN = 3 V. This is not a rated continuous current but a protective clamp level - actual steady-state current depends on thermal conditions, PCB layout, and ambient temperature. At 25°C ambient on a ceramic substrate, total package power dissipation is limited to 2 W for dual-channel operation, implying ~0.8 A per channel under typical R_DS(ON) and thermal resistance conditions. Always verify thermal performance in the final application.

Does UPD166101GR-E1-AZ require external flyback diodes when driving solenoids?

No, UPD166101GR-E1-AZ does not require external flyback diodes when driving solenoids. It integrates a dynamic clamp circuit that limits output voltage to 40–60 V during turn-off, effectively suppressing inductive kickback. This eliminates the need for discrete external clamping components, reducing BOM count and PCB area while maintaining robustness against voltage transients in inductive load applications.

What is the function of separate GND1 and GND2 pins on UPD166101GR-E1-AZ?

The separate GND1 and GND2 pins on UPD166101GR-E1-AZ provide electrically isolated ground returns for Channel 1 and Channel 2, respectively. This isolation minimizes ground bounce and crosstalk between channels, supports independent current monitoring, and improves thermal management by allowing localized heat sinking. It also enables flexible PCB layout where load return paths must be separated - for example, in systems with mixed-sensitivity analog and digital subsystems sharing the same IC.

Is UPD166101GR-E1-AZ qualified for automotive applications?

UPD166101GR-E1-AZ is classified as "Special" quality grade per Renesas documentation, which covers transportation equipment including automobiles, trains, and ships. While it meets key automotive environmental requirements (−40°C to +125°C ambient, Pb-free, robust ESD handling), it is not AEC-Q100 qualified. For production automotive ECUs, confirm qualification status with Renesas and review latest reliability reports - this part is commonly used in non-safety-critical body electronics such as interior lighting and comfort systems.

Can UPD166101GR-E1-AZ be used with 3.3 V microcontrollers?

Yes, UPD166101GR-E1-AZ is compatible with 3.3 V microcontrollers. Its input threshold is defined by VIH ≥ 3 V (min) and VIL ≤ 1.5 V (max) at 25°C, making it fully compatible with standard 3.3 V CMOS logic levels. Input current remains below ±10 μA across temperature, ensuring minimal loading on MCU GPIO. However, ensure adequate noise margin in noisy environments - use local decoupling and avoid routing IN1/IN2 near high-dI/dt traces.