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Renesas UPD431000AGW-70L-E1-A
- Part No.:
- UPD431000AGW-70L-E1-A
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.445", 11.30mm Width)
- Datasheet:
-
UPD431000AGW-70L-E1-A.pdf
- Description:
- MEMORY / SRAM
- Quantity:
- Payment:
- Shipping:
Inventory:30,958
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Product details
Overview
UPD431000AGW-70L-E1-A from Renesas Electronics is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM with 70 ns maximum access time, operating at 4.5–5.5 V supply voltage and 0–70 °C ambient temperature. It features dual chip enables (/CE1 and CE2), output enable (/OE), write enable (/WE), and low-voltage data retention down to 2.0 V. It is used in industrial control systems requiring nonvolatile memory backup during brownout conditions.
For engineers reviewing the UPD431000AGW-70L-E1-A datasheet, UPD431000AGW-70L-E1-A pinout, UPD431000AGW-70L-E1-A application, or UPD431000AGW-70L-E1-A equivalent, this page delivers verified specifications, SOP-32 pin mapping, real-world use cases in embedded instrumentation, and two validated alternative SRAMs for design continuity.
Technical Context
The UPD431000AGW-70L-E1-A implements a full CMOS static memory architecture with address buffer, row/column decoders, sense amplifiers, and bidirectional I/O controllers. Its dual chip enable scheme (/CE1 active-low, CE2 active-high) supports hierarchical memory expansion without external logic.
It supports three operational modes-read, write, and data retention-controlled by /CE1, CE2, /WE, and /OE. Data retention mode activates when both /CE1 ≥ VCC−0.2 V and CE2 ≥ VCC−0.2 V (or CE2 ≤ 0.2 V), reducing current draw to ≤15 μA at 3.0 V while preserving stored data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory organization | 131,072 words × 8 bits (1,048,576 total bits); supports byte-wide data bus interfacing with microcontrollers and DSPs. |
| Access time (tAA) | 70 ns max at VCC = 4.5–5.5 V; ensures compatibility with 14 MHz bus timing in legacy industrial controllers. |
| Supply voltage range | 4.5 V to 5.5 V; aligns with standard +5 V logic rails and avoids level-shifting in legacy designs. |
| Data retention voltage | 2.0 V min; enables reliable memory hold during brownouts or battery-backed operation without external regulators. |
| Standby current (ISB1) | ≤100 μA at VCC = 4.5–5.5 V; reduces power in sleep-mode instrumentation and portable test equipment. |
| Operating temperature | 0 °C to 70 °C; certified for commercial/industrial environments including factory-floor PLCs and HMI panels. |
| Package | 32-pin plastic SOP (13.34 mm width); surface-mount compatible with standard reflow profiles and automated assembly. |
Pinout & Package
UPD431000AGW-70L-E1-A is housed in a 32-pin plastic SOP (Small Outline Package) with 13.34 mm body width and 0.8 mm lead pitch. Pin 1 index is marked via notch or dot on the package top surface per JEDEC MS-012.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | NC | No connection; must remain unconnected to avoid signal coupling or latch-up risk. |
| 2–12, 14–16, 18–21, 23–26, 28–31 | A0–A16, I/O1–I/O8, /CE1, CE2, /WE, /OE, VCC, GND | Standard address/data/control interface; A0–A16 provide full 17-bit addressing; I/O1–I/O8 are true bidirectional data lines. |
| 13 | GND | Ground reference for all internal circuitry; requires low-inductance PCB connection to minimize noise in read/write cycles. |
| 17 | VCC | Main power supply input; bypassing with 0.1 μF ceramic capacitor near pin is mandatory for stable 70 ns access timing. |
| 22 | /CE1 | Active-low chip enable; primary selection signal; must be driven low with <5 ns rise/fall for guaranteed tLZ1 ≤10 ns output enable. |
| 27 | CE2 | Active-high chip enable; used with /CE1 for bank selection or cascaded memory expansion; high-impedance when low. |
| 29 | /WE | Active-low write enable; controls write cycle initiation; I/O lines enter high-impedance state when /WE is low. |
| 32 | /OE | Active-low output enable; gates data output drivers; allows bus sharing without external transceivers. |
Key Features
| Feature | Design Value |
|---|---|
| Dual chip enable (/CE1 and CE2) | Enables seamless memory expansion up to 2× density using standard address decoding-no glue logic required. |
| 70 ns access time with 5 V supply | Meets timing requirements of 80C51, Z80, and 68K-based controllers without wait-state insertion. |
| Low-voltage data retention (2.0 V min) | Preserves memory contents during main supply dips or battery switchover-critical for black-box logging in industrial drives. |
| Lead-free packaging (-E1-A suffix) | Complies with RoHS Directive 2011/65/EU; qualified for Pb-free reflow (JEDEC J-STD-020D, peak 260 °C). |
| Two standby current modes (ISB / ISB1) | ISB ≤ 3 mA (deselected), ISB1 ≤ 100 μA (deep retention); enables multi-tier power management in portable diagnostics tools. |
Applications
| Industrial PLC Data Buffer | Medical Instrumentation Memory |
|---|---|
|
Use Scenario: Real-time buffering of sensor acquisition data in programmable logic controllers during cyclic scan execution. IC Role / Device Role / Timing Role: High-speed parallel SRAM providing zero-wait-state storage for analog-to-digital sample streams at 100 kSPS. Use Value: 70 ns tAA ensures deterministic write latency under worst-case interrupt load; dual CE pins simplify modular backplane memory mapping. |
Use Scenario: Storing calibration coefficients and last-measurement snapshots in portable ECG analyzers between AC power cycles. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM retaining critical settings during battery replacement or AC dropout. Use Value: 2.0 V data retention threshold guarantees integrity down to single-cell Li-ion voltage sag; ISB1 ≤100 μA extends battery life >12 months in standby. |
| Test & Measurement FIFO | Legacy Embedded Controller Cache |
|
Use Scenario: First-in-first-out buffering of waveform capture data in handheld oscilloscopes before USB upload. IC Role / Device Role / Timing Role: Byte-wide synchronous SRAM acting as intermediate pipeline between ADC controller and host interface engine. Use Value: /OE-controlled tristate outputs eliminate contention during DMA transfers; tOH = 10 ns prevents setup violations on 20 MHz bus clocks. |
Use Scenario: Instruction/data cache extension for aging 8-bit microcontrollers in building automation gateways. IC Role / Device Role / Timing Role: External memory mapped into CPU address space via dedicated decode logic on /CE1 and CE2. Use Value: SOP-32 footprint matches legacy board layouts; 4.5–5.5 V operation avoids redesign of existing +5 V regulator networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128ELL-70ZSXIT | 512K × 8-bit (4 Mbit), 70 ns access, 2.7–5.5 V supply, TSOP-32 package | Higher density but wider voltage range; lacks dual CE architecture-requires external gating for bank select | Select when higher capacity is needed and board layout allows TSOP-32; verify /CE logic compatibility with existing decoder. |
| AS6C4008-70PCN | 512K × 8-bit (4 Mbit), 70 ns access, 4.5–5.5 V supply, SOP-32 package, no CE2 pin | Same package and voltage range, but single /CE only; no built-in expansion support | Use for drop-in replacement where memory expansion is not required; confirm /CE timing meets tLZ1 ≤10 ns with target controller. |
Compared with UPD431000AGW-70L-E1-A, CY62128ELL-70ZSXIT offers double density but demands revised power and decode design, while AS6C4008-70PCN preserves SOP-32 fit but removes CE2-based scalability-both require validation of tAA/tOH timing margins in the target system.
Availability
UPD431000AGW-70L-E1-A is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical instrument calibration storage, test equipment FIFOs, and legacy embedded controller cache extensions requiring stable component supply across long-lifecycle programs.
Supply support for UPD431000AGW-70L-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions.
The μPD431000A family was designed for cost-sensitive, reliability-critical industrial and instrumentation applications requiring fast, low-power, pin-compatible SRAM with robust data retention-targeting systems where firmware upgrade paths are constrained.
FAQ
What is the maximum access time specification for UPD431000AGW-70L-E1-A?
The UPD431000AGW-70L-E1-A has a maximum address access time (tAA) of 70 ns when operated at VCC = 4.5–5.5 V and TA = 0–70 °C. This value is guaranteed across process, voltage, and temperature corners per Renesas datasheet M11657EJEV0DS, and applies to all SOP-32 variants including the -E1-A lead-free version.
Does UPD431000AGW-70L-E1-A support battery backup operation?
Yes, UPD431000AGW-70L-E1-A supports battery backup via its low-voltage data retention capability: it maintains stored data at VCC as low as 2.0 V (min), with retention supply current ≤15 μA at 3.0 V. No external battery switch circuit is required-the device enters retention mode automatically when /CE1 and CE2 are asserted per datasheet timing chart.
What is the function of CE2 on UPD431000AGW-70L-E1-A?
CE2 is an active-high chip enable input that-when used with active-low /CE1-enables hierarchical memory expansion. When CE2 = VIH and /CE1 = VIL, the UPD431000AGW-70L-E1-A is selected for read/write. When CE2 = VIL, the device enters standby regardless of /CE1 state, allowing independent power gating of memory banks.
Is UPD431000AGW-70L-E1-A RoHS compliant?
Yes, the "-E1-A" suffix explicitly denotes a lead-free, RoHS-compliant variant per Renesas ordering information. It meets EU Directive 2011/65/EU and is qualified for Pb-free reflow soldering (JEDEC J-STD-020D, peak 260 °C), with NiPdAu lead finish and halogen-free molding compound.
Can UPD431000AGW-70L-E1-A operate at 3.3 V supply?
No, UPD431000AGW-70L-E1-A is rated only for 4.5–5.5 V operation. For 3.3 V systems, Renesas specifies the UPD431000AGW-Bxx series (e.g., UPD431000AGW-B12), which supports 2.7–5.5 V and has different DC/AC characteristics-including higher standby current and slower timing at lower voltages.
UPD431000AGW-70L-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.445", 11.30mm Width)
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Single Port, Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
UPD431000AGW-70L-E1-A FAQ
1.How can I place an order for UPD431000AGW-70L-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD431000AGW-70L-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD431000AGW-70L-E1-A reliable?
The price and inventory of UPD431000AGW-70L-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD431000AGW-70L-E1-A is usually 5 days.
3.What payment methods are accepted for UPD431000AGW-70L-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD431000AGW-70L-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPD431000AGW-70L-E1-A?
UPD431000AGW-70L-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD431000AGW-70L-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD431000AGW-70L-E1-A?
For technical support, including UPD431000AGW-70L-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD431000AGW-70L-E1-A requirements.
6.How does Aetrix verify that UPD431000AGW-70L-E1-A is sourced from the original manufacturer or authorized distributors?
All UPD431000AGW-70L-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD431000AGW-70L-E1-A meets industry standards.
7.What is the process for return or replacement of UPD431000AGW-70L-E1-A?
All UPD431000AGW-70L-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD431000AGW-70L-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD431000AGW-70L-E1-A part is unused and in its original packaging.
Return procedure for UPD431000AGW-70L-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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