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Renesas UPD431000AGW-80Y-E2

Part No.:
UPD431000AGW-80Y-E2
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD431000AGW-80Y-E2.pdf
Description:
MEMORY / SRAM
Quantity:
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Shipping:
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Inventory:441,000

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Product details

Overview

UPD431000AGW-80Y-E2 from Renesas Electronics is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM in 32-pin plastic SOP package, featuring 80 ns maximum access time, low-voltage operation (2.7–5.5 V), and dual chip enable (/CE1, CE2) for memory expansion. It supports battery backup, data retention down to 2.0 V, and operates across 0–70 °C ambient temperature - used in embedded controllers and industrial instrumentation requiring nonvolatile SRAM hold.

For engineers reviewing the UPD431000AGW-80Y-E2 datasheet, UPD431000AGW-80Y-E2 pinout, UPD431000AGW-80Y-E2 application, or UPD431000AGW-80Y-E2 equivalent, key selection considerations include access timing under VCC = 2.7–5.5 V, /CE1/CE2 decode logic for bank selection, I/O bidirectional drive capability, and low-standby-current data retention mode with CE2 control.

Technical Context

The UPD431000AGW-80Y-E2 implements a full static RAM architecture with asynchronous read/write cycles, address decoding via A0–A16 inputs, and independent chip enable logic where /CE1 (active-low) and CE2 (active-high) must be asserted simultaneously with /WE for write operations. Its output enable (/OE) controls tri-state behavior without affecting internal state.

It supports three distinct data retention modes: /CE1 high + CE2 high, CE2 low, or both enables inactive - each requiring VCC ≥ 2.0 V and drawing ≤11 μA standby current. The device uses standard TTL-compatible input thresholds and drives outputs to VOH ≥ 2.4 V (IOH = –1.0 mA) and VOL ≤ 0.4 V (IOL = 2.1 mA) at VCC ≥ 4.5 V.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size131,072 words × 8 bits (1,048,576 bits); supports byte-wide data bus interfacing without external multiplexing.
Access time80 ns max (tAA, tCO1, tCO2); defines minimum address-to-data valid delay in read cycles under VCC ≥ 2.7 V.
Supply voltage2.7–5.5 V; enables direct interface with 3.3 V and 5 V logic systems, including mixed-voltage board designs.
Data retention VCC2.0 V min; allows operation from backup battery or supercapacitor during main power loss without data corruption.
Standby current1–11 μA (ISB1/ISB2); enables ultra-low-power hold mode for portable or energy-harvesting applications.
Operating temperature0–70 °C; qualified for commercial and industrial-grade embedded systems excluding automotive or extended-temp environments.
Package32-pin plastic SOP (13.34 mm); surface-mount compatible with standard reflow profiles and manual prototyping.

Pinout & Package

UPD431000AGW-80Y-E2 is housed in a 32-pin plastic SOP (Small Outline Package) measuring 13.34 mm × 7.62 mm with 1.27 mm lead pitch. Pin 1 index is marked by notch or dot on top surface per JEDEC MS-012.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address inputs17-bit address bus supporting full 131,072-word addressing; no internal latching - requires stable address during /CE1/CE2 active window.
I/O1–I/O8Bidirectional data bus8-bit parallel data path; high-impedance when /OE = low or /WE = low; driven to valid logic levels only during read with /OE = high.
/CE1Chip Enable 1 (active-low)Primary enable; device selected only when /CE1 = low AND CE2 = high AND /WE = high (read) or low (write).
CE2Chip Enable 2 (active-high)Secondary enable; must be high for normal operation; pulled low to enter data retention mode with VCC ≥ 2.0 V.
/WEWrite Enable (active-low)Controls write cycle initiation; I/O pins become high-impedance during /WE = low regardless of /OE state.
/OEOutput Enable (active-low)Enables output drivers only when low; does not affect internal memory state or write capability.
VCCPower supplySingle supply input; decoupling capacitor (0.1 μF ceramic) required within 10 mm of pin for noise immunity.
GNDGround referenceCommon return path for all signals; must be connected to low-impedance system ground plane.
NCNo connectionPin 1 (top-left corner) is unconnected; must remain floating - no routing or soldering allowed.

Key Features

FeatureDesign Value
Dual chip enable (/CE1, CE2)Enables seamless memory expansion up to 2× density using external address decode logic without additional glue logic.
Low-voltage data retentionMaintains stored data at VCC as low as 2.0 V with ≤11 μA current draw - ideal for battery-backed real-time clock or configuration storage.
Asynchronous interfaceNo clock required; timing governed solely by /CE1, CE2, /WE, and /OE setup/hold windows - simplifies integration with microcontrollers lacking dedicated SRAM controllers.
TTL-compatible I/OAccepts standard 0.8 V/2.2 V input thresholds and delivers 2.4 V/0.4 V output levels at 1.0 mA load - interoperable with legacy 5 V and modern 3.3 V logic families.
Three retention entry methodsSupports /CE1 high + CE2 high, CE2 low, or both enables inactive - provides flexibility in power sequencing and fail-safe hold activation.

Applications

Industrial PLC Data BufferMedical Diagnostic Instrument Memory

Use Scenario: Stores temporary sensor acquisition buffers and firmware scratchpad in programmable logic controllers during cyclic scan execution.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing zero-wait-state read/write access to CPU during scan cycle; retains critical state during brief AC dropout.

Use Value: 80 ns access enables full 16-bit bus utilization at 12.5 MHz CPU clock; 2.0 V retention sustains data through 20 ms brownout events.

Use Scenario: Holds calibration coefficients and last-measurement snapshot in portable ultrasound or ECG units between battery charges.

IC Role / Device Role / Timing Role: Nonvolatile buffer retaining patient-critical settings during sleep mode; accessed only during boot or user-initiated recalibration.

Use Value: 11 μA standby current extends battery life beyond 12 months; CE2-controlled retention eliminates need for external power switch control logic.

Communications Module Packet BufferAutomotive Infotainment Bootloader Cache

Use Scenario: Temporarily stores incoming Ethernet or CAN-FD packet payloads before DMA transfer to main processor memory.

IC Role / Device Role / Timing Role: High-speed parallel interface SRAM acting as first-stage FIFO; synchronized to packet arrival interrupts rather than system clock.

Use Value: Dual /CE1/CE2 enables interleaved bank access for simultaneous receive/transmit buffering; 80 ns latency prevents packet loss at 100 Mbps line rate.

Use Scenario: Caches bootloader code segments during cold start of head unit MCU to reduce boot time from flash memory.

IC Role / Device Role / Timing Role: Static RAM mapped into CPU's instruction space; holds decompressed firmware blocks prior to execution.

Use Value: 131,072 × 8-bit capacity accommodates 128 KB compressed image; 2.7–5.5 V range matches automotive 3.3 V rail tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS6C1008-70SCN70 ns access, 32-pin SOJ package, 2.7–5.5 V, but no CE2 pin - single /CE only.Lacks dual-enable expansion capability; requires redesign of address decode logic for multi-chip configurations.Select when board layout already uses SOJ footprint and memory expansion is not required.
IS61LV10248AL-10TLI10 ns access, 44-pin TSOP-II, 3.3 V only, higher speed but narrower voltage range.Not suitable for 5 V systems or battery-retention use; incompatible pinout and package mounting.Choose only for new 3.3 V designs demanding sub-15 ns latency and higher density scaling.

Compared with AS6C1008-70SCN and IS61LV10248AL-10TLI, UPD431000AGW-80Y-E2 uniquely balances 80 ns performance, wide 2.7–5.5 V operation, dual chip enable for expandability, and proven 2.0 V data retention - making it optimal for cost-sensitive industrial and medical devices needing robustness over raw speed.

Availability

UPD431000AGW-80Y-E2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical diagnostic instrument memory, communications module packet buffering, and automotive infotainment bootloader cache requiring stable component supply across long production lifecycles.

Supply support for UPD431000AGW-80Y-E2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions.

The UPD431000A family was designed for cost-effective, low-power static RAM applications in industrial control, instrumentation, and embedded systems where reliability, wide supply range, and data retention are prioritized over ultra-high speed.

FAQ

What is the maximum access time specification for UPD431000AGW-80Y-E2?

The UPD431000AGW-80Y-E2 has a maximum access time of 80 ns for address access (tAA), /CE1 access (tCO1), and CE2 access (tCO2) under recommended operating conditions (VCC ≥ 2.7 V, TA = 0–70 °C). This value is guaranteed across the B-version speed grade and applies to all package variants including the 32-pin SOP.

Does UPD431000AGW-80Y-E2 support true 3.3 V operation?

Yes, UPD431000AGW-80Y-E2 is a B-version device rated for 2.7–5.5 V operation, fully compliant with 3.3 V ±10% supply rails. All DC and AC specifications - including 80 ns access time, 11 μA standby current (ISB2), and TTL-compatible I/O thresholds - are validated at VCC = 3.3 V.

How does data retention work on UPD431000AGW-80Y-E2?

UPD431000AGW-80Y-E2 enters data retention mode when either /CE1 ≥ VCC − 0.2 V and CE2 ≥ VCC − 0.2 V, or CE2 ≤ 0.2 V, with VCC maintained ≥ 2.0 V. In this state, it draws ≤11 μA and preserves memory contents indefinitely - no external circuitry or clock required.

Can UPD431000AGW-80Y-E2 be used in a 5 V system?

Yes, UPD431000AGW-80Y-E2 supports VCC = 4.5–5.5 V per its L-version specification subset. At 5 V, it delivers VOH ≥ 2.4 V (IOH = –1.0 mA) and VOL ≤ 0.4 V (IOL = 2.1 mA), ensuring reliable interfacing with standard 5 V TTL and CMOS logic families.

What is the function of the NC pin on UPD431000AGW-80Y-E2?

Pin 1 of UPD431000AGW-80Y-E2 is designated NC (No Connection) and must remain unconnected - neither tied to VCC, GND, nor any signal. This pin has no internal bond wire and connecting it risks latch-up or undefined behavior per Renesas datasheet M11657EJEV0DS.

UPD431000AGW-80Y-E2 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD431000AGW-80Y-E2 FAQ

1.How can I place an order for UPD431000AGW-80Y-E2 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD431000AGW-80Y-E2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD431000AGW-80Y-E2 reliable?

The price and inventory of UPD431000AGW-80Y-E2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD431000AGW-80Y-E2 is usually 5 days.

3.What payment methods are accepted for UPD431000AGW-80Y-E2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD431000AGW-80Y-E2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD431000AGW-80Y-E2?

UPD431000AGW-80Y-E2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD431000AGW-80Y-E2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD431000AGW-80Y-E2?

For technical support, including UPD431000AGW-80Y-E2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD431000AGW-80Y-E2 requirements.

6.How does Aetrix verify that UPD431000AGW-80Y-E2 is sourced from the original manufacturer or authorized distributors?

All UPD431000AGW-80Y-E2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD431000AGW-80Y-E2 meets industry standards.

7.What is the process for return or replacement of UPD431000AGW-80Y-E2?

All UPD431000AGW-80Y-E2 units undergo pre-shipment inspection (PSI). If there is an issue with UPD431000AGW-80Y-E2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD431000AGW-80Y-E2 part is unused and in its original packaging.

Return procedure for UPD431000AGW-80Y-E2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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