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Renesas UPD431000AGZ-70LL-KJH-E3-A

Part No.:
UPD431000AGZ-70LL-KJH-E3-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD431000AGZ-70LL-KJH-E3-A.pdf
Description:
SRAM 5V 1M-BIT (128K X 8)
Quantity:
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Payment
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Inventory:98,000

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Product details

Overview

UPD431000AGZ-70LL-KJH-E3-A from Renesas Electronics is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM with 70 ns maximum access time, 4.5–5.5 V operating supply voltage, and 0–70 °C industrial temperature range. It features dual chip enables (/CE1, CE2), output enable (/OE), write enable (/WE), and low-voltage data retention down to 2.0 V - used in embedded control modules requiring nonvolatile SRAM backup during power interruption.

For engineers reviewing the UPD431000AGZ-70LL-KJH-E3-A datasheet, UPD431000AGZ-70LL-KJH-E3-A pinout, UPD431000AGZ-70LL-KJH-E3-A application, or UPD431000AGZ-70LL-KJH-E3-A equivalent, key selection criteria include TSOP(I) 32-pin (8×20 mm, normal bent) package compatibility, 70 ns read/write timing under 5 V operation, dual CE architecture for memory expansion, and verified data retention at 2.0 V.

Technical Context

The UPD431000AGZ-70LL-KJH-E3-A implements a full CMOS static RAM architecture with row/column decoding, sense amplifiers, and input/output switching circuitry. Its dual chip enable inputs (/CE1 active-low, CE2 active-high) support hierarchical memory mapping and seamless bank expansion without external logic.

It operates in three primary modes: read (with /CE1 low, CE2 high, /OE low, /WE high), write (with /CE1 low, CE2 high, /WE low), and standby (with /CE1 high or CE2 low). Data retention mode activates when both /CE1 ≥ VCC−0.2 V and CE2 ≥ VCC−0.2 V (or CE2 ≤ 0.2 V), enabling ultra-low-current hold at VCC ≥ 2.0 V.

Key Specifications

ParameterValue and Actual Design Meaning
Memory organization131,072 words × 8 bits (1,048,576 total bits) - supports byte-wide data bus interfacing with microcontrollers and DSPs.
Access time (tAA)70 ns max at VCC = 4.5–5.5 V - enables direct connection to 14 MHz bus systems without wait states.
Supply voltage4.5–5.5 V - compatible with standard 5 V TTL/CMOS logic families and legacy industrial power rails.
Data retention voltage2.0 V min - maintains stored data during brown-out or battery-backup scenarios without external supervision.
Operating temperature0 to 70 °C - qualified for commercial and industrial control applications, excluding automotive or extended-temp environments.
Standby current (ISB1)1–20 μA at VCC ≤ 3.6 V - enables ultra-low-power hold mode in energy-constrained embedded systems.
Package32-pin plastic TSOP(I), 8 mm × 20 mm, normal bent leads - surface-mount compatible with standard reflow profiles and IPC-7351B land patterns.

Pinout & Package

UPD431000AGZ-70LL-KJH-E3-A is housed in a 32-pin plastic TSOP(I) package (8 mm × 20 mm, normal bent leads), compliant with JEDEC MO-153AC. Pin 1 index is marked on the top surface per Renesas package drawing S32GZ-50-KJH1-2.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address inputs17-bit address bus supporting full 131,072-word addressing; A16 is MSB for 1 Mbit capacity.
I/O1–I/O8Bi-directional data bus8-bit parallel interface; high-impedance during /WE high (read) or /CE1 high/CE2 low (standby).
/CE1Chip Enable 1 (active low)Primary chip select; device enabled only when low AND CE2 is high - prevents partial selection glitches.
CE2Chip Enable 2 (active high)Secondary enable; must be high for read/write; allows cascading with other SRAMs using shared /CE1.
/WEWrite Enable (active low)Controls write cycle initiation; I/O pins enter high-impedance state when /WE is low, isolating data bus during writes.
/OEOutput Enable (active low)Gates output drivers; allows read data to appear on I/O lines only when /OE is asserted low.
VCCPower supply4.5–5.5 V nominal; decoupling capacitor (0.1 μF ceramic) required within 5 mm of pin for stable 70 ns timing.
GNDGround referenceSignal and power ground; requires low-inductance connection to minimize noise coupling into sensitive sense amplifiers.
NCNo connectionPin 9 is unconnected; must remain floating - no pull-up/down or routing allowed.

Key Features

FeatureDesign Value
Dual chip enable (/CE1 + CE2)Enables seamless memory expansion up to 2+ banks without glue logic; eliminates address decoding conflicts in multi-SRAM systems.
70 ns access time at 5 VSupports real-time data buffering in industrial PLCs and test equipment where deterministic latency < 70 ns is required for control loop integrity.
2.0 V data retentionPreserves RAM contents during main power loss while backup battery or supercapacitor discharges - critical for fault logging and state recovery.
Lead-free (RoHS-compliant)Meets EU RoHS Directive 2011/65/EU; solder reflow profile follows J-STD-020D for TSOP(I) packages with peak temperature ≤ 260 °C.
Low standby current (≤20 μA)Reduces system-level quiescent power by >99% vs. active mode - extends battery life in portable instrumentation and remote sensors.

Applications

Industrial PLC Data BufferMedical Diagnostic Instrument Cache

Use Scenario: Stores real-time sensor acquisition buffers and program stack in programmable logic controllers during cyclic scan execution.

IC Role / Device Role / Timing Role: Byte-wide static RAM providing zero-wait-state data storage interfaced directly to 8-bit microcontroller data bus with /CE1/CE2 decoded from address lines.

Use Value: 70 ns tAA ensures deterministic response within 10 ms PLC scan cycles; dual CE allows modular memory expansion as I/O count increases.

Use Scenario: Caches waveform data from ADC front-end in portable ultrasound or ECG units before compression and transmission.

IC Role / Device Role / Timing Role: High-reliability SRAM holding transient patient signal data during power transitions between AC mains and internal Li-ion battery.

Use Value: 2.0 V data retention preserves critical waveform fragments during 100 ms brown-outs; low ISB1 (<20 μA) extends battery runtime between charges.

Automated Test Equipment (ATE) Pattern MemoryNetwork Router Control Plane Buffer

Use Scenario: Stores digital test pattern sequences executed by FPGA-based pattern generators in semiconductor ATE systems.

IC Role / Device Role / Timing Role: Fast-access SRAM acting as instruction/data memory for high-speed vector execution, synchronized to 14 MHz clock domain.

Use Value: 70 ns tAA matches FPGA I/O timing margins; TSOP(I) package enables dense PCB layout for multi-channel parallel test heads.

Use Scenario: Buffers MAC table entries and packet metadata in Layer 2/L3 enterprise switches during firmware updates or failover events.

IC Role / Device Role / Timing Role: Nonvolatile cache maintaining forwarding state across warm reboots, backed by onboard coin-cell battery.

Use Value: Dual CE architecture isolates control-plane SRAM from data-plane memory maps; 2.0 V retention prevents MAC table loss during 500 ms power switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV1024AL-70TLISame 128K×8 organization and 70 ns speed, but 3.3 V only (2.7–3.6 V); 32-pin TSOP(I), 8×20 mm.Requires 3.3 V supply rail and level-shifting for 5 V systems; not drop-in compatible with 5 V logic interfaces.Select when migrating to 3.3 V platforms and redesigning power delivery; verify /OE and /WE timing margins against controller.
CY62128ELL-70ZSXI128K×8, 70 ns, 5 V operation; 32-pin SOIC (not TSOP); higher ICCA (85 mA vs. 70 mA) and no data retention below 4.5 V.Larger SOIC footprint increases board area; lacks low-VCC retention - unsuitable for battery-backed hold mode.Choose for through-hole prototyping or legacy SOIC layouts; avoid where data retention during brown-out is required.

Compared with IS61LV1024AL-70TLI and CY62128ELL-70ZSXI, the UPD431000AGZ-70LL-KJH-E3-A uniquely combines 5 V compatibility, 2.0 V data retention, and TSOP(I) packaging - making it the only option among the three that supports both legacy 5 V designs and robust power-fail resilience without external circuitry.

Availability

UPD431000AGZ-70LL-KJH-E3-A is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic instruments, and automated test equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for UPD431000AGZ-70LL-KJH-E3-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions.

The μPD431000A family was designed for cost-sensitive, high-reliability embedded systems needing fast, low-power static RAM with flexible enable architecture and battery-backed data retention - targeting industrial control, test instrumentation, and communications infrastructure.

FAQ

What is the maximum access time specification for UPD431000AGZ-70LL-KJH-E3-A?

The UPD431000AGZ-70LL-KJH-E3-A has a maximum address access time (tAA) of 70 ns at VCC = 4.5–5.5 V and TA = 0–70 °C. This value is guaranteed across process, voltage, and temperature corners per Renesas datasheet M11657EJEV0DS, and applies to all package variants including the TSOP(I) version.

Does UPD431000AGZ-70LL-KJH-E3-A support true 5 V operation?

Yes. The UPD431000AGZ-70LL-KJH-E3-A is rated for 4.5–5.5 V operation (L-version), with VIH minimum of 2.2 V and VOH minimum of 2.4 V at IOH = –1.0 mA - fully compatible with TTL and 5 V CMOS logic families without level translation.

What package type and dimensions does UPD431000AGZ-70LL-KJH-E3-A use?

UPD431000AGZ-70LL-KJH-E3-A uses a 32-pin plastic TSOP(I) package measuring 8.0 mm × 20.0 mm (JEDEC MO-153AC), with normal bent leads (KJH suffix) and RoHS-compliant lead-free finish (E3-A suffix).

Can UPD431000AGZ-70LL-KJH-E3-A retain data at voltages below 4.5 V?

Yes. The UPD431000AGZ-70LL-KJH-E3-A guarantees data retention down to 2.0 V (VCCDR1) when both /CE1 and CE2 are held in retention-active states - enabling reliable hold-mode operation during brown-out conditions common in industrial power supplies.

How many chip enable signals does UPD431000AGZ-70LL-KJH-E3-A have, and what are their logic polarities?

The UPD431000AGZ-70LL-KJH-E3-A has two chip enable inputs: /CE1 (active-low) and CE2 (active-high). Both must be asserted simultaneously (/CE1 = low, CE2 = high) for read or write operations; either deassertion places the device in standby with I/O in high-impedance state.

UPD431000AGZ-70LL-KJH-E3-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD431000AGZ-70LL-KJH-E3-A FAQ

1.How can I place an order for UPD431000AGZ-70LL-KJH-E3-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD431000AGZ-70LL-KJH-E3-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD431000AGZ-70LL-KJH-E3-A reliable?

The price and inventory of UPD431000AGZ-70LL-KJH-E3-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD431000AGZ-70LL-KJH-E3-A is usually 5 days.

3.What payment methods are accepted for UPD431000AGZ-70LL-KJH-E3-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD431000AGZ-70LL-KJH-E3-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD431000AGZ-70LL-KJH-E3-A?

UPD431000AGZ-70LL-KJH-E3-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD431000AGZ-70LL-KJH-E3-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD431000AGZ-70LL-KJH-E3-A?

For technical support, including UPD431000AGZ-70LL-KJH-E3-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD431000AGZ-70LL-KJH-E3-A requirements.

6.How does Aetrix verify that UPD431000AGZ-70LL-KJH-E3-A is sourced from the original manufacturer or authorized distributors?

All UPD431000AGZ-70LL-KJH-E3-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD431000AGZ-70LL-KJH-E3-A meets industry standards.

7.What is the process for return or replacement of UPD431000AGZ-70LL-KJH-E3-A?

All UPD431000AGZ-70LL-KJH-E3-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD431000AGZ-70LL-KJH-E3-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD431000AGZ-70LL-KJH-E3-A part is unused and in its original packaging.

Return procedure for UPD431000AGZ-70LL-KJH-E3-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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