Renesas UPD431000AGZ-70X-KJH-A

Overview

UPD431000AGZ-70X-KJH-A from Renesas Electronics is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM with 70 ns maximum access time, operating at 4.5–5.5 V supply voltage and –25 to +85 °C ambient temperature. It features dual chip enables (/CE1, CE2), output enable (/OE), write enable (/WE), and low-voltage data retention down to 2.0 V. This SRAM supports extended memory expansion in industrial control and instrumentation systems requiring deterministic timing and battery-backed operation.

For engineers reviewing the UPD431000AGZ-70X-KJH-A datasheet, UPD431000AGZ-70X-KJH-A pinout, UPD431000AGZ-70X-KJH-A application, or UPD431000AGZ-70X-KJH-A equivalent, key selection considerations include its 32-pin TSOP (I) 8×20 mm package, dual CE architecture for banked memory mapping, 70 ns read cycle timing under VCC ≥ 4.5 V, and lead-free compliance indicated by the "-A" suffix.

Technical Context

The UPD431000AGZ-70X-KJH-A implements a full CMOS static RAM architecture with address buffer, row/column decoders, 1,048,576-bit memory cell array, sense amplifiers, and input/output controllers. Its two independent chip enable inputs (/CE1 active-low, CE2 active-high) allow hierarchical memory decoding and seamless capacity extension without external logic.

It supports three operational modes-read, write, and standby-with distinct current profiles: 70 mA max ICCA during active read/write, 3 mA max ISB in standby with one CE inactive, and 2.5 μA max ISB1/ISB2 in deep data retention mode when both /CE1 and CE2 are deselected. Data retention is guaranteed at VCC ≥ 2.0 V across the full temperature range.

Key Specifications

Pinout & Package

UPD431000AGZ-70X-KJH-A is housed in a 32-pin plastic TSOP (I) package measuring 8 mm × 20 mm with normal-bent leads. The package complies with JEDEC MO-153 and supports lead-free reflow soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with UPD431000AGZ-70X-KJH-A, the IS61LV10248AL-70TLI offers lower power at 3.3 V but sacrifices dual CE flexibility, while the AS6C4008-70PCN matches voltage and speed but uses SOP packaging and single CE-making UPD431000AGZ-70X-KJH-A optimal for new 5 V industrial designs needing compact TSOP and scalable memory architecture.

Availability

UPD431000AGZ-70X-KJH-A is available at Aetrix Electronics and suitable for industrial PLC memory expansion, test equipment data buffering, and medical diagnostic instrumentation requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD431000AGZ-70X-KJH-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions.

The UPD431000A-X series was designed for industrial and instrumentation applications demanding high-reliability, extended-temperature SRAM with flexible enable architecture and robust data retention-targeting systems where refresh-free operation and deterministic timing are critical.

FAQ

What is the maximum access time specification for UPD431000AGZ-70X-KJH-A?

The UPD431000AGZ-70X-KJH-A has a maximum address access time (tAA) of 70 ns when operated at VCC ≥ 4.5 V and TA ≤ +85 °C. This value is measured from address valid to valid data output under specified load conditions (1.8 kΩ + 5 pF), ensuring compatibility with 14 MHz bus clocking in microcontroller-based systems. The 70 ns rating applies specifically to the "-70X" speed grade and is not guaranteed at lower supply voltages.

Does UPD431000AGZ-70X-KJH-A support battery backup operation?

Yes, UPD431000AGZ-70X-KJH-A supports battery backup via its low-voltage data retention capability: it maintains stored data at VCC as low as 2.0 V across the full operating temperature range (–25 °C to +85 °C). In data retention mode, supply current drops to ≤2.5 μA (at TA ≤ 40 °C), enabling years of backup operation from small coin-cell batteries in industrial and medical applications.

What does the "-A" suffix in UPD431000AGZ-70X-KJH-A indicate?

The "-A" suffix in UPD431000AGZ-70X-KJH-A denotes full compliance with the EU RoHS Directive, confirming that the device is lead-free and manufactured using Pb-free terminations and molding compounds. It also indicates conformance to J-STD-020 moisture sensitivity level 3 and lead-free reflow soldering profiles-critical for modern SMT assembly lines handling environmentally regulated products.

How does the dual chip enable (/CE1 and CE2) function in UPD431000AGZ-70X-KJH-A?

In UPD431000AGZ-70X-KJH-A, the device is selected only when /CE1 is low AND CE2 is high. This dual-enable logic enables hierarchical memory decoding: CE2 can serve as a bank select (e.g., upper/lower 512 KB), while /CE1 acts as the final chip select within each bank. This eliminates need for external AND gates in multi-SRAM systems and simplifies address decoding in 16-bit or wider data paths.

Is UPD431000AGZ-70X-KJH-A compatible with 3.3 V logic interfaces?

No, UPD431000AGZ-70X-KJH-A is rated for 4.5–5.5 V operation only and is not 3.3 V tolerant. Its VIH minimum is 2.4 V, but DC and AC specifications-including 70 ns access time and 70 mA ICCA-are guaranteed only at VCC ≥ 4.5 V. Interfacing with 3.3 V microcontrollers requires level-shifting circuitry or selection of the A-version (e.g., UPD431000AGZ-A10X-KJH-A) which supports 3.0–5.5 V operation.