Renesas UPD44164182BF5-E33Y-EQ3-A
- Part No.:
- UPD44164182BF5-E33Y-EQ3-A
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
UPD44164182BF5-E33Y-EQ3-A.pdf
- Description:
- DDR SRAM, 1MX18, 0.45NS
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Inventory:654
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Product details
Overview
UPD44164182BF5-E33Y-EQ3-A from Renesas Electronics is a 1,048,576-word × 18-bit synchronous double data rate (DDR II) SRAM with HSTL interface, 1.8 V core supply, 300 MHz clock operation (3.3 ns cycle time), and industrial temperature range (−40 to +85°C). It integrates PLL-based timing control, echo clocks (CQ/CQ#), and user-programmable output impedance for high-speed memory subsystems in networking and test equipment.
For engineers reviewing the UPD44164182BF5-E33Y-EQ3-A datasheet, UPD44164182BF5-E33Y-EQ3-A pinout, UPD44164182BF5-E33Y-EQ3-A application, or UPD44164182BF5-E33Y-EQ3-A equivalent, this page delivers verified DDR II SRAM specifications including burst timing, HSTL I/O compliance, JTAG 1149.1 support, ZQ impedance calibration, and industrial-grade thermal performance.
Technical Context
This device implements pipelined DDR operation using dual input clocks (K/K#) for address/control latching and dual output clocks (C/C#) for precise data delivery timing. Its internal burst counter enables fixed two-word linear bursts, and echo clocks CQ/CQ# are tightly matched to DQ outputs for reliable data valid windows.
The integrated PLL supports wide output data valid windows and frequency scaling up to 300 MHz, while DLL# allows PLL bypass during debug. Output impedance is calibrated via ZQ pin against an external resistor, supporting 35–70 Ω tuning per JEDEC HSTL Class I standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1,048,576 × 18-bit (18 Mbit total) |
| Clock Frequency | 300 MHz - enables 600 MT/s effective data rate with DDR architecture |
| Supply Voltage | VDD = 1.8 ± 0.1 V - strict regulation required for stable DDR timing and PLL lock |
| I/O Interface | HSTL Class I - compatible with 1.5 V VDDQ and VREF = VDDQ/2 for noise-immune signaling |
| Operating Temperature | −40 to +85°C - qualified for industrial embedded systems and base station applications |
| Burst Mode | Fixed 2-word linear burst - reduces command overhead and simplifies controller logic |
| Output Impedance | User-programmable 35–70 Ω via ZQ pin - matches PCB trace impedance to minimize reflections |
| JTAG Support | IEEE 1149.1 compliant TAP (TCK/TMS/TDI/TDO) - enables boundary-scan testing and debug |
Pinout & Package
165-pin Plastic BGA (13 × 15 mm, 0.8 mm pitch), RoHS-compliant lead-free package with exposed thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, K# | Input Clock Pair | Registers all synchronous inputs on rising edges; 180° phase relationship required for jitter control |
| C, C# | Output Clock Pair | Provides programmable data timing reference; tied HIGH to use K/K# instead |
| CQ, CQ# | Echo Clock Outputs | Tightly matched to DQ outputs (±0.1 ns); used as data valid indication independent of bus state |
| DQ0–DQ17 | Data I/O Bus | 18-bit bidirectional DDR data path; HSTL Class I compliant with programmable drive strength |
| LD#, R, W#, BW0#, BW1# | Control Inputs | Synchronous load, read/write direction, and byte-write enable signals - all registered on K edge |
| ZQ | Impedance Calibration Input | Connects to external resistor to ground; sets DQ/CQ/CQ# output impedance to 0.2 × RQ |
| VREF | HSTL Reference | Nominally VDDQ/2; supplies reference voltage for input buffer threshold stability |
| TCK, TMS, TDI, TDO | JTAG Test Port | 1.8 V I/O level IEEE 1149.1 interface; TCK must be tied to VSS if unused |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined DDR Operation | Enables concurrent address setup and data transfer across consecutive cycles, improving sustained bandwidth |
| Programmable Output Impedance (35–70 Ω) | Eliminates need for external series termination resistors; adapts to varying PCB trace impedances |
| PLL-Based Timing Control | Extends data valid window and supports future frequency scaling without redesigning clock distribution |
| Two-Tick Burst Architecture | Reduces command latency and simplifies memory controller FSM by fixing burst length to two words |
| Integrated Echo Clocks (CQ/CQ#) | Deliver deterministic, low-skew timing references tightly aligned to DQ outputs for receiver capture margin |
| Industrial Temperature Range (−40 to +85°C) | Validated for deployment in telecom infrastructure, industrial automation, and test instrumentation environments |
Applications
| High-Speed Network Packet Buffer | Automated Test Equipment (ATE) Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with line-rate throughput. IC Role / Device Role / Timing Role: DDR II SRAM serving as low-latency, burst-access packet buffer interfacing directly with MAC controllers via HSTL. Use Value: 300 MHz clock and echo clocks (CQ/CQ#) ensure deterministic data capture at 600 MT/s, minimizing frame loss under bursty traffic. | Use Scenario: Capturing high-fidelity digital waveforms during functional validation of ASICs and FPGAs. IC Role / Device Role / Timing Role: Synchronous memory buffer acquiring parallel test vectors at 300 MHz with precise timing alignment. Use Value: Programmable ZQ impedance matching and HSTL I/O reduce signal integrity issues on dense ATE backplanes. |
| Base Station Digital Front-End Buffer | Real-Time Signal Processing Module |
Use Scenario: Temporarily storing IQ samples between ADC/DAC and FPGA-based digital up/down-conversion blocks. IC Role / Device Role / Timing Role: Industrial-grade DDR II SRAM providing burst-aligned sample storage with sub-ns timing margins. Use Value: −40 to +85°C qualification and PLL-controlled clock recovery enable reliable operation in outdoor RF units. | Use Scenario: Supporting real-time FFT and filtering pipelines in radar and sonar processing hardware. IC Role / Device Role / Timing Role: Low-latency memory resource feeding pipeline stages with 18-bit precision data at 300 MHz. Use Value: Two-word burst mode and pipelined DDR architecture reduce memory access stalls, sustaining >90% pipeline utilization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1551KV18-333BZXC | 300 MHz, 1M × 18, 165-pin FBGA, but uses SSTL-2 interface and 2.5 V VDDQ | Requires different termination scheme and power rail; not HSTL-compatible | Select only if existing design already uses SSTL-2 and 2.5 V I/O rails |
| IS42S16160J-3BL | SDRAM (not DDR II SRAM), 1M × 16, 54-pin TSOP, asynchronous refresh, no echo clocks or ZQ | Lacks synchronous burst control, PLL, and impedance tuning; higher latency and lower reliability in deterministic systems | Consider only for cost-sensitive, non-real-time applications where timing predictability is not critical |
Compared with CY7C1551KV18-333BZXC and IS42S16160J-3BL, UPD44164182BF5-E33Y-EQ3-A provides HSTL Class I compatibility, ZQ-calibrated output impedance, and echo clocks-critical for deterministic timing in high-speed test and telecom systems where signal integrity and jitter tolerance are design constraints.
Availability
UPD44164182BF5-E33Y-EQ3-A is available at Aetrix Electronics and suitable for high-speed network packet buffering, automated test equipment (ATE) memory subsystems, and industrial base station digital front-end applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for UPD44164182BF5-E33Y-EQ3-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The μPD44164xx2B product line delivers high-density, low-latency DDR II SRAMs optimized for deterministic timing-critical applications such as test instrumentation, telecom infrastructure, and real-time signal processing.
FAQ
What is the operating temperature range of UPD44164182BF5-E33Y-EQ3-A?
The UPD44164182BF5-E33Y-EQ3-A is rated for industrial operation from −40°C to +85°C ambient temperature. This is confirmed in the Ordering Information table (Page 2) and DC Characteristics 2 section (Page 14) of the datasheet R10DS0014EJ0200 Rev.2.00. The "Y" suffix explicitly denotes the extended temperature grade, distinguishing it from commercial-grade variants (0 to 70°C).
Does UPD44164182BF5-E33Y-EQ3-A support JTAG boundary-scan testing?
Yes, UPD44164182BF5-E33Y-EQ3-A supports IEEE 1149.1 JTAG boundary-scan testing. Pins TCK (2R), TMS (10R), TDI (11R), and TDO (1R) form a compliant 1.8 V I/O TAP interface, documented on Page 21 of the datasheet. The device implements a limited subset of JTAG instructions but supports mandatory boundary-scan functionality for interconnect testing.
How does the ZQ pin function on UPD44164182BF5-E33Y-EQ3-A?
The ZQ pin on UPD44164182BF5-E33Y-EQ3-A calibrates output driver impedance for DQ, CQ, and CQ# pins. As specified on Page 6, connecting ZQ to ground through a resistor RQ sets output impedance to 0.2 × RQ (e.g., 175–350 Ω yields 35–70 Ω). Calibration occurs automatically every 20 μs after power-up, compensating for voltage and temperature drift without host intervention.
What is the role of CQ and CQ# pins on UPD44164182BF5-E33Y-EQ3-A?
CQ and CQ# are synchronous echo clock outputs on UPD44164182BF5-E33Y-EQ3-A, tightly matched to DQ data edges (±0.1 ns variation, Page 17 Note 6). They provide a deterministic, low-skew timing reference for receiving devices to capture data, independent of C/C# or K/K# states. Unlike C/C#, CQ/CQ# continue running even when DQ tristates, enabling robust data valid detection.
Can UPD44164182BF5-E33Y-EQ3-A operate without its PLL enabled?
Yes, UPD44164182BF5-E33Y-EQ3-A can operate with the PLL disabled by asserting DLL# = LOW, as described on Page 6. In this mode, read latency reduces to 1.0 clock cycle, but AC/DC characteristics are not guaranteed per datasheet specification. Normal operation requires DLL# = HIGH (tied to VDDQ via ≤10 kΩ resistor), and PLL lock requires ≥20 μs of stable K clock after power-up (Page 8).
UPD44164182BF5-E33Y-EQ3-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
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UPD44164182BF5-E33Y-EQ3-A FAQ
1.How can I place an order for UPD44164182BF5-E33Y-EQ3-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD44164182BF5-E33Y-EQ3-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD44164182BF5-E33Y-EQ3-A reliable?
The price and inventory of UPD44164182BF5-E33Y-EQ3-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44164182BF5-E33Y-EQ3-A is usually 5 days.
3.What payment methods are accepted for UPD44164182BF5-E33Y-EQ3-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44164182BF5-E33Y-EQ3-A transactions.
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Once your UPD44164182BF5-E33Y-EQ3-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD44164182BF5-E33Y-EQ3-A?
For technical support, including UPD44164182BF5-E33Y-EQ3-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44164182BF5-E33Y-EQ3-A requirements.
6.How does Aetrix verify that UPD44164182BF5-E33Y-EQ3-A is sourced from the original manufacturer or authorized distributors?
All UPD44164182BF5-E33Y-EQ3-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44164182BF5-E33Y-EQ3-A meets industry standards.
7.What is the process for return or replacement of UPD44164182BF5-E33Y-EQ3-A?
All UPD44164182BF5-E33Y-EQ3-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44164182BF5-E33Y-EQ3-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD44164182BF5-E33Y-EQ3-A part is unused and in its original packaging.
Return procedure for UPD44164182BF5-E33Y-EQ3-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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