Renesas UPD44164182BF5-E40-EQ3

Overview

UPD44164182BF5-E40-EQ3 from Renesas Electronics is a 1,048,576-word × 18-bit synchronous double data rate (DDR) SRAM with pipelined burst operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports two-word burst reads/writes, and integrates PLL-based timing control for precise output data valid window alignment. It is used in high-speed networking packet buffers and FPGA co-processor memory subsystems requiring low-latency, wide-bit synchronous access.

For engineers reviewing the UPD44164182BF5-E40-EQ3 datasheet, UPD44164182BF5-E40-EQ3 pinout, UPD44164182BF5-E40-EQ3 application, or UPD44164182BF5-E40-EQ3 equivalent, this page provides verified technical context, validated pin functions, confirmed DDR timing behavior, real-world application mappings, and rigorously cross-checked alternative parts - all grounded in Renesas R10DS0014EJ0200 Rev.2.00.

Technical Context

This device implements a fully synchronous DDR architecture with dual input clocks (K/K#) latching address/control on K's rising edge and data on both K and K# rising edges. Its internal burst counter advances A0 to generate linear 2-word bursts, and its echo clocks (CQ/CQ#) are tightly matched to output data edges for deterministic flight-time compensation.

The integrated PLL enables stable 250 MHz operation with ±0.2 ns clock phase jitter tolerance and 20 μs lock time after power-up. Output impedance is user-programmable (35–70 Ω) via ZQ pin, and HSTL Class I-compliant outputs meet JEDEC JESD8-15A specifications at 1.5 V VDDQ.

Key Specifications

Pinout & Package

UPD44164182BF5-E40-EQ3 is housed in a 165-pin plastic BGA package (13 × 15 mm, 0.8 mm pitch) with standard ball map and index mark per Renesas Package Dimensions spec.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SRAM applications.

Compared with UPD44164182BF5-E40-EQ3, CY7C2663KV18 offers dual-port concurrency at higher voltage and power cost, while IS61WV102418B trades DDR performance for simplicity and broad voltage compatibility - neither is pin- or functionally compatible.

Availability

UPD44164182BF5-E40-EQ3 is available at Aetrix Electronics and suitable for networking packet buffers, FPGA co-processor memory subsystems, and industrial motion controller buffers requiring stable component supply, long-term lifecycle assurance, and guaranteed lead-free compliance.

Supply support for UPD44164182BF5-E40-EQ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44164182BF5-E40-EQ3 belongs to Renesas' DDR II SRAM product line, designed specifically for high-speed, low-latency synchronous memory applications in networking, test equipment, and real-time control systems where deterministic timing and HSTL interoperability are essential.

FAQ

What is the maximum supported clock frequency for UPD44164182BF5-E40-EQ3?

The UPD44164182BF5-E40-EQ3 is rated for 250 MHz operation with a 4.0 ns clock cycle time, as specified in Renesas datasheet R10DS0014EJ0200 Rev.2.00. This frequency is guaranteed across the 0°C to 70°C ambient temperature range with proper power sequencing and PLL enable (DLL# = HIGH). Exceeding 250 MHz violates AC timing parameters including TKHKH and TKC var.

Does UPD44164182BF5-E40-EQ3 support true DDR data transfers on both clock edges?

Yes, the UPD44164182BF5-E40-EQ3 performs true double data rate operation: input data is sampled on both the rising edge of K and the rising edge of K#, and output data is driven relative to C/C# or K/K# depending on configuration. This is confirmed by the "Pipelined double data rate operation" feature and timing diagrams on pages 17–19 of R10DS0014EJ0200.

How is output impedance calibrated on UPD44164182BF5-E40-EQ3?

Output impedance is calibrated via the ZQ pin, which connects to an external resistor (RQ = 175–350 Ω) to ground. The device sets DQ, CQ, and CQ# output impedance to 0.2 × RQ, yielding 35–70 Ω range. Calibration occurs automatically every 20 μs after power-up, as documented in the Pin Description section (page 6) and Electrical Characteristics (page 13).

Can UPD44164182BF5-E40-EQ3 operate without the PLL enabled?

Yes - pulling DLL# LOW disables the PLL and allows operation below 120 MHz, but AC/DC characteristics are not guaranteed and read latency changes to 1.0 cycle. For full-spec 250 MHz operation, DLL# must be HIGH (tied to VDDQ), as stated in the Pin Description (page 6) and PLL Constraints (page 8) of R10DS0014EJ0200.

What is the purpose of the CQ and CQ# pins on UPD44164182BF5-E40-EQ3?

CQ and CQ# are synchronous echo clock outputs tightly matched to DQ output edges (±0.1 ns variation). They provide hardware-valid strobes for receiving devices, enabling precise data capture without relying on controller-generated clocks. Unlike C/C#, CQ/CQ# continue running even when DQ tristates or clocks stop, as detailed on page 6 and Figure 19 of R10DS0014EJ0200.