Renesas UPD44164182BF5-E40X-EQ3
- Part No.:
- UPD44164182BF5-E40X-EQ3
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
UPD44164182BF5-E40X-EQ3.pdf
- Description:
- DDR SRAM, 1MX18, 0.45NS
- Quantity:
- Payment:

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Inventory:1,200
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Product details
Overview
UPD44164182BF5-E40X-EQ3 from Renesas Electronics is a 1,048,576-word × 18-bit synchronous double data rate (DDR II) SRAM with pipelined burst operation, HSTL interface, and PLL-based timing control. It operates at 250 MHz (4.0 ns cycle time), supports 1.8 V core supply and 1.5 V I/O supply, and is packaged in a 165-pin plastic BGA (13 × 15 mm). It delivers precise clock/data alignment via C/C# output clocks and CQ/CQ# echo clocks for high-speed memory interfacing in telecom baseband and network packet buffering.
For engineers reviewing the UPD44164182BF5-E40X-EQ3 datasheet, UPD44164182BF5-E40X-EQ3 pinout, UPD44164182BF5-E40X-EQ3 application, or UPD44164182BF5-E40X-EQ3 equivalent, key selection criteria include DDR II timing compliance, HSTL Class I I/O compatibility, user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), and JTAG 1149.1 test access for system-level validation.
Technical Context
This DDR II SRAM uses full-CMOS six-transistor memory cells and integrates synchronous peripheral logic with a 2-word linear burst counter. All inputs-including address (A0), read/write (R, W#), byte write enables (BW0#, BW1#), and load (LD#)-are registered on the rising edge of K/K# input clocks.
Output timing is controlled by independent C/C# output clocks or falls back to K/K# when C/C# are held HIGH; CQ/CQ# echo clocks provide tightly matched data-valid references. The internal PLL enables wide output data valid windows and supports frequency scaling, while DLL# allows PLL bypass for low-frequency debug operation (RL = 1.0 cycle).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1,048,576 × 18-bit (18 Mbit total) |
| Clock Frequency | 250 MHz - defines maximum sustained transaction rate for burst-2 reads/writes |
| Supply Voltages | VDD = 1.8 ± 0.1 V; VDDQ = 1.4–1.8 V - dual-rail operation enables optimized I/O drive strength and signal integrity |
| Interface Standard | HSTL Class I - ensures compatibility with JEDEC-compliant controllers and point-to-point routing |
| Burst Mode | 2-word linear burst - reduces bus turnaround overhead and simplifies controller logic |
| Output Impedance | User-programmable 35–70 Ω via ZQ pin - enables dynamic matching to PCB trace impedance without external termination resistors |
| Timing Reference | C/C# and CQ/CQ# outputs - deliver sub-ns skew between clock and data for reliable capture at receiving devices |
Pinout & Package
UPD44164182BF5-E40X-EQ3 is housed in a 165-pin plastic BGA package (13 × 15 mm grid, 0.8 mm pitch), compliant with RoHS and lead-free assembly requirements. Pin assignments follow JEDEC MO-251 standard layout with corner index mark.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, K# | Input clock pair | Registers all control and address inputs on rising edges; phase-aligned 180° differential pair required for jitter-sensitive DDR timing |
| C, C# | Output clock pair | Provides programmable output timing reference; rising edges define first/second data valid windows for burst-2 transfers |
| CQ, CQ# | Echo clock outputs | Tightly matched to DQ outputs (±0.1 ns); used as data-valid strobes independent of C/C# state |
| DQ0–DQ17 | Bi-directional data bus | 18-bit synchronous I/O; supports byte-write masking via BW0#/BW1# for partial-word updates |
| LD#, R, W#, BW0#, BW1# | Control inputs | Synchronous load initiates burst sequence; R/W# sets direction; BW# selects 9-bit byte lanes for write granularity |
| ZQ | Impedance calibration input | Connects to external resistor to ground to set DQ/CQ/CQ# output drive strength (0.2 × RQ) |
| DLL# | PLL disable | Pull LOW to bypass PLL for debug at frequencies below 120 MHz; disables guaranteed AC specs |
| TCK, TMS, TDI, TDO | JTAG 1149.1 interface | 1.8 V I/O level test access port; supports boundary-scan and device identification per IEEE standard |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined DDR operation | Enables concurrent address latching and data transfer across successive K/K# edges, increasing effective bandwidth without raising clock frequency |
| Two-tick burst architecture | Reduces command overhead and minimizes bus idle cycles-ideal for packetized traffic in networking and baseband processing |
| Internally self-timed write control | Eliminates need for external write-enable timing coordination; guarantees write completion within defined clock window regardless of process/voltage/temperature variation |
| Programmable output impedance (35–70 Ω) | Allows real-time adaptation to PCB trace impedance changes due to temperature or manufacturing tolerances, improving signal fidelity without redesign |
| Clock-stop capability with 20 μs recovery | Supports dynamic power gating in low-latency systems; full functionality resumes within one microcontroller instruction cycle after clock restart |
Applications
| Telecom Baseband Processing | Network Packet Buffering |
|---|---|
Use Scenario: Real-time channel coding/decoding in 4G/LTE femtocell baseband units requiring low-latency, burst-oriented memory access. IC Role / Device Role / Timing Role: High-speed DDR II SRAM providing synchronized 18-bit data path with CQ/CQ# echo clocks aligned to FPGA or ASIC data capture logic. Use Value: 250 MHz operation and 2-word burst reduce memory latency by >30% vs. asynchronous SRAM, enabling tighter symbol processing deadlines. | Use Scenario: Temporary storage of variable-length Ethernet/IP packets in Layer 2/3 switches before forwarding or classification. IC Role / Device Role / Timing Role: Burst-capable buffer interfacing with MAC controller via HSTL I/O, using BW0#/BW1# for partial-word writes during packet header updates. Use Value: User-programmable 35–70 Ω output impedance maintains signal integrity across diverse PCB stackups, reducing pre-layout simulation iterations. |
| Industrial Motion Control | Medical Imaging Data Acquisition |
Use Scenario: Interpolation table storage and real-time trajectory calculation in servo drive controllers with deterministic timing constraints. IC Role / Device Role / Timing Role: Synchronous SRAM acting as low-jitter data scratchpad for DSP cores, leveraging clock-stop mode during idle motion phases. Use Value: 20 μs clock-resume time meets <50 μs real-time response requirements for safety-critical motion loops without hardware reset. | Use Scenario: Frame buffering in ultrasound or MRI front-end digitizers where analog-to-digital samples must be stored with minimal timing uncertainty. IC Role / Device Role / Timing Role: DDR II SRAM delivering precisely timed sample bursts to FPGA-based decimation filters using C/C# output clocks for deterministic sampling alignment. Use Value: Sub-ns CQ-to-DQ skew (±0.1 ns) ensures <1 LSB timing error in 14-bit+ acquisition paths, preserving dynamic range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2663KV18 | 256K × 36 organization; 200 MHz max; no PLL; uses SSTL-2 I/O | Lower density and bandwidth; lacks echo clocks and programmable impedance | Select when cost-sensitive designs tolerate reduced burst depth and require simpler timing closure without PLL lock management |
| AS7C3318B | 1M × 18 async SRAM; 15 ns access; 3.3 V only; no DDR interface or burst logic | No clock synchronization; incompatible with DDR controller interfaces; higher latency | Choose only for legacy systems lacking DDR support or where deterministic nanosecond-level access timing outweighs bandwidth needs |
Compared with CY7C2663KV18 and AS7C3318B, UPD44164182BF5-E40X-EQ3 uniquely combines 250 MHz DDR II operation, echo-clock timing assurance, and field-adjustable output impedance-enabling higher throughput and lower system-level timing margin risk in new high-speed embedded designs.
Availability
UPD44164182BF5-E40X-EQ3 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and medical imaging equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for UPD44164182BF5-E40X-EQ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The μPD44164xx2B product line was designed specifically for high-bandwidth, low-latency DDR II memory applications in baseband processors, network switches, and real-time control systems-emphasizing precise timing, signal integrity, and thermal robustness in compact BGA packages.
FAQ
What is the operating temperature range for UPD44164182BF5-E40X-EQ3?
The UPD44164182BF5-E40X-EQ3 is rated for an operating ambient temperature range of 0 °C to +70 °C, as confirmed by its ordering suffix "E40" (not "E40Y"). This specification aligns with commercial-grade applications and excludes extended industrial temperature support.
Does UPD44164182BF5-E40X-EQ3 support JTAG boundary-scan testing?
Yes, UPD44164182BF5-E40X-EQ3 implements IEEE 1149.1 JTAG test access port with dedicated TCK, TMS, TDI, and TDO pins operating at 1.8 V I/O level. It supports device identification and boundary-scan functionality, though full instruction set support is limited per the datasheet's JTAG specification section.
How does the ZQ pin function in UPD44164182BF5-E40X-EQ3?
The ZQ pin on UPD44164182BF5-E40X-EQ3 serves as the output impedance calibration input. When connected to a precision resistor to ground, it sets DQ, CQ, and CQ# driver strength to 0.2 × RQ. Output impedance is automatically recalibrated every 20 μs after power-up to compensate for voltage and temperature drift.
Can UPD44164182BF5-E40X-EQ3 operate without the PLL enabled?
Yes, UPD44164182BF5-E40X-EQ3 can operate with the PLL disabled by asserting DLL# = LOW. In this mode, read latency reduces to 1.0 clock cycle and operation is supported down to 120 MHz, but AC/DC electrical characteristics are not guaranteed per datasheet specifications.
What is the purpose of CQ and CQ# signals in UPD44164182BF5-E40X-EQ3?
CQ and CQ# are synchronous echo clock outputs tightly matched to DQ data transitions (±0.1 ns). They provide a reliable, skew-compensated data-valid indication for receiving devices-especially useful when C/C# output clocks are not used or when precise data capture timing is critical in high-speed systems.
UPD44164182BF5-E40X-EQ3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD44164182BF5-E40X-EQ3 FAQ
1.How can I place an order for UPD44164182BF5-E40X-EQ3 through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD44164182BF5-E40X-EQ3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD44164182BF5-E40X-EQ3 reliable?
The price and inventory of UPD44164182BF5-E40X-EQ3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44164182BF5-E40X-EQ3 is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44164182BF5-E40X-EQ3 transactions.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD44164182BF5-E40X-EQ3?
For technical support, including UPD44164182BF5-E40X-EQ3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44164182BF5-E40X-EQ3 requirements.
6.How does Aetrix verify that UPD44164182BF5-E40X-EQ3 is sourced from the original manufacturer or authorized distributors?
All UPD44164182BF5-E40X-EQ3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44164182BF5-E40X-EQ3 meets industry standards.
7.What is the process for return or replacement of UPD44164182BF5-E40X-EQ3?
All UPD44164182BF5-E40X-EQ3 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44164182BF5-E40X-EQ3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD44164182BF5-E40X-EQ3 part is unused and in its original packaging.
Return procedure for UPD44164182BF5-E40X-EQ3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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