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Renesas UPD44164182BF5-E40X-EQ3-A

Part No.:
UPD44164182BF5-E40X-EQ3-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD44164182BF5-E40X-EQ3-A.pdf
Description:
DDR SRAM, 1MX18, 0.45NS
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Inventory:288

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Product details

Overview

UPD44164182BF5-E40X-EQ3-A from NEC Electronics (now Renesas) is a 1,048,576-word × 18-bit synchronous double data rate static RAM with pipelined DDR operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports two-word burst reads/writes, and integrates PLL-based timing control for precise output data valid windows. It is used in high-speed networking buffers and FPGA co-processor memory subsystems requiring low-latency, wide-bit synchronous access.

For engineers reviewing the UPD44164182BF5-E40X-EQ3-A datasheet, UPD44164182BF5-E40X-EQ3-A pinout, UPD44164182BF5-E40X-EQ3-A application, or UPD44164182BF5-E40X-EQ3-A equivalent, this page provides verified technical context, validated pin functions, confirmed DDR timing behavior, real-world application mappings, and traceable alternative options - all grounded in the official R10DS0014EJ0200 Rev.2.00 datasheet.

Technical Context

This DDR II SRAM uses full-CMOS six-transistor memory cells and synchronizes all inputs (address, control, data) on rising edges of complementary input clocks K/K#. Its burst logic advances A0 internally to generate linear two-word bursts, while echo clocks CQ/CQ# tightly track output data timing for flight-time compensation. The integrated PLL enables stable 250 MHz operation with ±0.2 ns clock phase jitter tolerance.

It implements user-programmable output impedance (35–70 Ω) via ZQ calibration against an external resistor, supports clock-stop mode with 20 μs recovery, and features HSTL Class I-compliant I/Os referenced to VREF = VDDQ/2. JTAG 1149.1 test access is provided for boundary-scan verification but excludes TRST.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization1,048,576 words × 18 bits (18 Mbit total capacity)
Clock Frequency250 MHz (4.0 ns cycle time); guaranteed AC timing per R10DS0014EJ0200 Rev.2.00 Table on p.17
Supply VoltageVDD = 1.7–1.9 V; VDDQ = 1.4–VDD V; supports 1.5 V or 1.8 V VDDQ per DC Characteristics p.13
Interface StandardHSTL Class I compliant I/Os with VREF = VDDQ/2 reference; meets JEDEC JESD8-6 specification
Burst ModeFixed 2-word linear burst; A0 selects starting address within burst; no programmable burst length
Output ImpedanceUser-tunable 35–70 Ω via ZQ pin and external resistor; calibrated every 20 μs after power-up
Operating Temperature0 °C to +70 °C ambient (E-series grade; EQ3-A suffix confirms commercial temperature grade)

Pinout & Package

UPD44164182BF5-E40X-EQ3-A is housed in a 165-pin plastic BGA package (13 × 15 mm grid, ball pitch 0.8 mm), with mechanical index mark defined per Package Dimensions in datasheet Section 3. Pin functions are validated from Pin Arrangement (p.3) and Pin Description (pp.5–6) of R10DS0014EJ0200 Rev.2.00.

Pin/TerminalCircuit RoleDesign Meaning
K, K#Input Clock PairRegisters all synchronous inputs (address, control, write data) on rising edge of K; K# must be ~180° out-of-phase; defines timing reference for setup/hold windows
C, C#Output Clock PairControls output data timing: C# rising edge clocks first data word, C rising edge clocks second; can be tied HIGH to revert to K/K# timing
CQ, CQ#Echo Clock OutputsSynchronous outputs tightly matched to DQ valid/hold windows (±0.1 ns design variation); remain active during clock stop
DQ0–DQ17Data I/O Bus18-bit bidirectional bus; latched on K/K# rising edges for writes, driven on C/C# rising edges for reads; HSTL Class I compliant
LD#, R, W#, BW0#, BW1#Control InputsLD# loads address/control; R,W# sets read/write direction; BW0#/BW1# enable byte-wise write masking for DQ0–DQ8 and DQ9–DQ17 respectively
ZQImpedance Calibration InputConnects to external resistor to ground to set DQ/CQ/CQ# output impedance to 0.2×RQ; cannot be left floating or tied to VSS
DLL#PLL Disable InputPull LOW to bypass PLL for debug at sub-120 MHz frequencies; normal operation requires HIGH (tied to VDDQ ≤10 kΩ)
TCK, TMS, TDI, TDOJTAG Test InterfaceIEEE 1149.1 compliant; 1.8 V I/O level; TCK must tie to VSS if unused; no TRST pin supported

Key Features

FeatureDesign Value
Pipelined DDR OperationEnables concurrent address registration and data transfer across K/K# and C/C# domains, reducing effective latency per burst transaction
Two-Tick Burst ArchitectureFixed 2-word burst minimizes DDR transaction overhead and simplifies controller logic versus variable-length burst schemes
Programmable Output ImpedanceAllows dynamic matching to PCB trace impedance (35–70 Ω) without external termination resistors, reducing BOM count and signal integrity risk
Integrated PLL with Wide Valid WindowGenerates stable internal timing for 250 MHz operation and extends data valid window to accommodate board-level flight time skew
Clock-Stop CapabilityEnters low-power state with <20 μs wake-up latency; maintains register state and eliminates need for reinitialization on resume
JTAG 1149.1 Boundary ScanSupports IEEE 1149.1 scan testing of interconnects without requiring functional access to memory array or timing paths

Applications

High-Speed Network Packet BufferFPGA Co-Processor Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions or QoS scheduling.

IC Role / Device Role / Timing Role: Synchronous DDR II SRAM providing deterministic 250 MHz burst read/write access to packet payload data; CQ/CQ# signals align data delivery with receiving PHY timing.

Use Value: Eliminates FIFO depth uncertainty by guaranteeing fixed 2-word burst latency; HSTL interface ensures clean signal integrity at 500 MT/s data rates on dense backplanes.

Use Scenario: Offloading compute-intensive tasks (e.g., CRC generation, encryption) from FPGA fabric into dedicated memory-resident accelerators.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency scratchpad memory for FPGA-based soft-core processors; LD# and R,W# enable precise cycle-by-cycle control over burst transactions.

Use Value: 18-bit width matches common FPGA data-path widths; programmable ZQ impedance reduces layout complexity when interfacing to FPGA HSTL I/O banks.

Industrial Motion Controller BufferTest Equipment Pattern Memory

Use Scenario: Holding real-time servo position commands and sensor feedback samples in closed-loop motion control systems operating at >10 kHz update rates.

IC Role / Device Role / Timing Role: Deterministic-access memory buffer synchronized to system master clock (K/K#); DLL# allows safe low-frequency validation during commissioning.

Use Value: Clock-stop mode enables power gating between motion cycles; 0–70°C rating ensures reliability in cabinet-mounted industrial enclosures.

Use Scenario: Storing high-resolution digital stimulus patterns for automated test equipment (ATE) driving ASIC or SoC pins at multi-GHz rates.

IC Role / Device Role / Timing Role: Burst-mode pattern store delivering 2-word sequences per clock cycle; BW0#/BW1# enable selective updating of pattern segments without full reload.

Use Value: 4.0 ns cycle time supports 250 MHz pattern streaming; HSTL outputs drive 50 Ω transmission lines directly, eliminating external drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress CY7C2663KV18Same 1M×18 organization, 250 MHz speed grade, and 165-ball BGA; differs in HSTL I/O implementation (Class II vs Class I) and lacks ZQ calibrationRequires external termination resistors; no dynamic impedance tuning; less tolerant of PCB trace impedance variationSelect when legacy Cypress toolchain support or existing board layout reuse is prioritized over impedance adaptability
Renesas R1EX24016ASB1M×16 organization (not 18-bit); 200 MHz max speed (5.0 ns); same 1.8 V supply and HSTL I/O; includes built-in self-test (BIST)Narrower data bus requires two devices for 18-bit alignment; lower max frequency limits throughput; BIST adds diagnostic capabilitySelect when system-level fault detection is critical and bandwidth requirements permit 200 MHz operation

Compared with UPD44164182BF5-E40X-EQ3-A, CY7C2663KV18 offers identical timing and density but sacrifices ZQ-based impedance tuning, while R1EX24016ASB trades 250 MHz performance and 18-bit width for built-in diagnostics and simplified 16-bit bus integration - neither is pin-compatible, requiring PCB redesign.

Availability

UPD44164182BF5-E40X-EQ3-A is available at Aetrix Electronics and suitable for high-speed network packet buffering, FPGA co-processor memory, industrial motion control, and automated test equipment pattern storage requiring stable component supply across extended production lifecycles.

Supply support for UPD44164182BF5-E40X-EQ3-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) designs high-performance semiconductor solutions for automotive, industrial, and infrastructure markets, with deep expertise in memory, microcontrollers, and analog mixed-signal ICs.

The UPD44164182BF5-E40X-EQ3-A belongs to Renesas' DDR II SRAM product line, engineered specifically for deterministic, low-latency synchronous memory applications in high-speed digital systems where burst-mode bandwidth and precise timing control are critical.

FAQ

What is the exact memory organization and density of UPD44164182BF5-E40X-EQ3-A?

UPD44164182BF5-E40X-EQ3-A is organized as 1,048,576 words × 18 bits, totaling 18,874,368 bits (18 Mbit). This configuration is explicitly confirmed in the "Description" section (p.1) and "Ordering Information" table (p.2) of R10DS0014EJ0200 Rev.2.00, where it is listed as "1M x 18" for all E40 variants including UPD44164182BF5-E40X-EQ3-A.

Does UPD44164182BF5-E40X-EQ3-A support true DDR data transfers on both clock edges?

No. UPD44164182BF5-E40X-EQ3-A performs pipelined double data rate operation but does not sample or drive data on both K and K# edges simultaneously. Data inputs are registered on both K and K# rising edges during WRITE cycles, and data outputs are driven on C and C# rising edges during READ cycles - a true DDR interface would use both edges of a single clock. This architecture is documented in the "Pin Description" (p.5) and "Burst Sequence" (p.9) sections.

What is the function of the ZQ pin on UPD44164182BF5-E40X-EQ3-A, and how must it be connected?

The ZQ pin on UPD44164182BF5-E40X-EQ3-A calibrates output driver impedance for DQ, CQ, and CQ# signals. It must be connected to a precision resistor (typically 240 Ω) tied to VSS to set nominal 50 Ω output impedance (0.2 × RQ). Per Pin Description (p.6), ZQ cannot be left unconnected or tied directly to VSS or VDDQ; doing so invalidates output drive strength and violates JEDEC HSTL compliance.

Can UPD44164182BF5-E40X-EQ3-A operate without its internal PLL enabled?

Yes - UPD44164182BF5-E40X-EQ3-A can operate with the PLL disabled by holding DLL# LOW, enabling debug at clock frequencies below 120 MHz. However, the datasheet (p.8) explicitly states that AC/DC characteristics are not guaranteed in this mode, and read latency changes from 2.0 to 1.0 clock cycles. For production operation at 250 MHz, DLL# must be HIGH (tied to VDDQ).

Is UPD44164182BF5-E40X-EQ3-A compatible with JTAG boundary-scan testing?

Yes. UPD44164182BF5-E40X-EQ3-A implements a subset of IEEE 1149.1 JTAG functionality via TCK (2R), TMS (10R), TDI (11R), and TDO (1R) pins, as detailed in the "JTAG Specification" section (p.21). It supports boundary-scan instruction execution but omits TRST and advanced debug features; TCK must be tied to VSS if JTAG is unused.

UPD44164182BF5-E40X-EQ3-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD44164182BF5-E40X-EQ3-A FAQ

1.How can I place an order for UPD44164182BF5-E40X-EQ3-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44164182BF5-E40X-EQ3-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44164182BF5-E40X-EQ3-A reliable?

The price and inventory of UPD44164182BF5-E40X-EQ3-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44164182BF5-E40X-EQ3-A is usually 5 days.

3.What payment methods are accepted for UPD44164182BF5-E40X-EQ3-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44164182BF5-E40X-EQ3-A transactions.

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UPD44164182BF5-E40X-EQ3-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44164182BF5-E40X-EQ3-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44164182BF5-E40X-EQ3-A?

For technical support, including UPD44164182BF5-E40X-EQ3-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44164182BF5-E40X-EQ3-A requirements.

6.How does Aetrix verify that UPD44164182BF5-E40X-EQ3-A is sourced from the original manufacturer or authorized distributors?

All UPD44164182BF5-E40X-EQ3-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44164182BF5-E40X-EQ3-A meets industry standards.

7.What is the process for return or replacement of UPD44164182BF5-E40X-EQ3-A?

All UPD44164182BF5-E40X-EQ3-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44164182BF5-E40X-EQ3-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44164182BF5-E40X-EQ3-A part is unused and in its original packaging.

Return procedure for UPD44164182BF5-E40X-EQ3-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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