Renesas UPD44164184BF5-E40-EQ3

Overview

UPD44164184BF5-E40-EQ3 from Renesas Electronics is a 1,048,576-word × 18-bit synchronous double data rate (DDR) SRAM with pipelined burst operation, HSTL interface, and PLL-based timing control. It operates at 250 MHz (4.0 ns cycle time), supports 1.8 V core supply and 1.4–1.8 V I/O supply, and is packaged in a 165-pin plastic BGA (13 × 15 mm). It serves as high-speed buffer memory in network packet processors requiring precise clock-aligned read/write bursts.

For engineers reviewing the UPD44164184BF5-E40-EQ3 datasheet, UPD44164184BF5-E40-EQ3 pinout, UPD44164184BF5-E40-EQ3 application, or UPD44164184BF5-E40-EQ3 equivalent, key selection considerations include DDR II timing compliance, HSTL Class I output drive, user-programmable 35–70 Ω output impedance, and JTAG 1149.1 test port support for system-level validation.

Technical Context

This device implements a synchronous DDR architecture with dual-clock domain separation: K/K# registers inputs on rising edges, while C/C# govern output data timing to match flight time and minimize skew. Its internal burst counter and linear 4-word burst sequence enable deterministic address progression without external sequencing logic.

The integrated PLL provides a wide output data valid window and enables future frequency scaling up to 300 MHz. Clock-stop capability (20 μs recovery) and DLL#-controlled PLL disable support low-power debug modes, while ZQ-calibrated output impedance ensures signal integrity across varying PCB trace impedances.

Key Specifications

Pinout & Package

UPD44164184BF5-E40-EQ3 is housed in a 165-pin plastic BGA package (13 × 15 mm grid, 0.8 mm pitch), optimized for high-density routing and thermal dissipation in networking and telecom modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C1551KV18 and IS61WV102418B, UPD44164184BF5-E40-EQ3 delivers superior signal integrity via HSTL Class I + ZQ calibration, deterministic timing via C/C# and CQ/CQ#, and true DDR efficiency - making it optimal for high-speed packet and video buffering where timing predictability is critical.

Availability

UPD44164184BF5-E40-EQ3 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial video frame buffering requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD44164184BF5-E40-EQ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The μPD44164184B family was designed specifically for high-bandwidth, low-latency synchronous memory applications in networking and telecom infrastructure - emphasizing DDR II timing precision, HSTL interoperability, and robust thermal performance in compact BGA packages.

FAQ

What is the operating temperature range for UPD44164184BF5-E40-EQ3?

The UPD44164184BF5-E40-EQ3 is rated for an operating ambient temperature of 0 to 70°C, as indicated by the "E" suffix in its ordering code. This distinguishes it from the "EY" variants (e.g., UPD44164184BF5-E40Y-EQ3), which support −40 to +85°C. The device's thermal resistance (θ_ja) is 21.4°C/W under still-air conditions on a 4-layer board, enabling reliable operation within this range when properly decoupled and heatsinked.

Does UPD44164184BF5-E40-EQ3 support true DDR data transfers on both clock edges?

Yes, UPD44164184BF5-E40-EQ3 implements true double data rate operation: input data is latched on both rising edges of K and K#, and output data is driven aligned to rising edges of C and C#. Its pipelined architecture ensures full utilization of both edges without internal serialization, delivering 250 MHz effective data rate per DQ line - confirmed by AC timing parameters TKHKH (4.0 ns) and TCHQV/TCHQX (±0.45 ns hold/setup relative to C/C#).

How is output impedance calibrated on UPD44164184BF5-E40-EQ3?

Output impedance on UPD44164184BF5-E40-EQ3 is calibrated via the ZQ pin, which connects to an external resistor (R_Q = 175–350 Ω) to ground. The device internally sets DQ, CQ, and CQ# driver strength to 0.2 × R_Q, yielding a programmable range of 35–70 Ω. Calibration occurs automatically every 20 μs after power-up and tracks supply voltage and temperature drift - eliminating manual trimming or fixed external termination.

Can UPD44164184BF5-E40-EQ3 operate without the PLL enabled?

Yes - pulling DLL# LOW disables the PLL, allowing operation at reduced clock frequencies (<250 MHz) for debug or low-power modes. In this state, read latency becomes 1.0 clock cycle, but AC/DC characteristics are not guaranteed per datasheet. For full-spec operation at 250 MHz, DLL# must be held HIGH (e.g., tied to VDDQ via ≤10 kΩ resistor), and stable clock must be applied for ≥20 μs to achieve PLL lock before initiating transactions.

What JTAG functions are supported by UPD44164184BF5-E40-EQ3?

UPD44164184BF5-E40-EQ3 implements IEEE 1149.1 JTAG with TCK, TMS, TDI, and TDO pins. It supports IDCODE register readout (32-bit vendor/device ID), boundary-scan testing via the boundary register, and bypass mode. TRST is not implemented; test-logic reset is achieved by holding TMS HIGH for five TCK cycles. All JTAG I/O operates at 1.8 V and requires proper termination per JEDEC HSTL guidelines.