Renesas UPD44164185BF5-E33Y-EQ3-A

Overview

UPD44164185BF5-E33Y-EQ3-A from Renesas Electronics is a 1,048,576-word × 18-bit synchronous double data rate (DDR) static RAM with HSTL interface, 1.8 V core supply, 300 MHz clock operation (3.3 ns cycle time), and 165-pin plastic BGA (13 × 15 mm) packaging. It delivers pipelined DDR read/write bursts of two words per cycle and supports industrial temperature range (−40 to +85°C), making it suitable for high-speed networking packet buffers and real-time video frame storage.

For engineers reviewing the UPD44164185BF5-E33Y-EQ3-A datasheet, UPD44164185BF5-E33Y-EQ3-A pinout, UPD44164185BF5-E33Y-EQ3-A application, or UPD44164185BF5-E33Y-EQ3-A equivalent, key selection considerations include its dual-clock timing architecture (K/K# input, C/C# output clocks), user-programmable output impedance (35–70 Ω), JTAG 1149.1 test port, and separate I/O bus with byte-write control (BW0#/BW1#).

Technical Context

This DDR II SRAM implements a synchronous burst-2 architecture with independent address/data paths and full CMOS six-transistor memory cells. Its internal PLL enables wide output data valid windows and supports frequency scaling up to 300 MHz while maintaining precise flight-time matching between C/C# output clocks and Q/CQ data outputs.

The device uses dual-edge clocking: K/K# register inputs on rising edges, while C/C# govern output timing - or K/K# may serve as fallback output reference when C/C# are held HIGH. All transactions are initiated via LD#-synchronized load of address and R,W# direction, followed by DDR-aligned data transfer across two consecutive clock edges.

Key Specifications

Pinout & Package

UPD44164185BF5-E33Y-EQ3-A is housed in a 165-pin plastic BGA package (13 × 15 mm grid, 0.8 mm pitch), with ball layout defined for top-view orientation and index mark per Renesas Package Dimensions documentation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SRAM applications.

Compared with CY7C1551KV18-333BZI and IS42S16160F-3BL, UPD44164185BF5-E33Y-EQ3-A uniquely combines HSTL I/O, echo-clock timing validation, and industrial temperature support - critical for deterministic DDR II interfaces in telecom and imaging systems where signal integrity and thermal reliability are non-negotiable.

Availability

UPD44164185BF5-E33Y-EQ3-A is available at Aetrix Electronics and suitable for telecom packet buffering, real-time video frame storage, industrial motion control buffering, and radar signal processing applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD44164185BF5-E33Y-EQ3-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.

The μPD44164xxxB family was designed specifically for high-speed, low-latency DDR II SRAM applications demanding synchronous burst operation, precise clock-data alignment, and industrial-grade reliability - targeting next-generation networking, imaging, and real-time control systems.

FAQ

What is the operating temperature range for UPD44164185BF5-E33Y-EQ3-A?

UPD44164185BF5-E33Y-EQ3-A is rated for industrial temperature operation from −40°C to +85°C, as confirmed in the Ordering Information table and DC Characteristics 2 section of the R10DS0016EJ0200 datasheet. This range is enabled by the "Y" suffix in the part number and verified across all AC/DC parameters including IDD, ISB1, and timing margins.

Does UPD44164185BF5-E33Y-EQ3-A support JTAG boundary-scan testing?

Yes, UPD44164185BF5-E33Y-EQ3-A integrates a IEEE 1149.1-compliant JTAG test access port with dedicated TCK, TMS, TDI, and TDO pins (ball positions 2R, 10R, 11R, and 1R respectively). The JTAG DC characteristics and state machine behavior are fully documented in the datasheet's JTAG Specification section.

How does the echo clock (CQ/CQ#) function in UPD44164185BF5-E33Y-EQ3-A?

In UPD44164185BF5-E33Y-EQ3-A, CQ and CQ# are synchronous echo clock outputs tightly matched to Q data outputs (±0.1 ns variation). They provide hardware-validated data validity timing independent of C/C# status and remain active even when Q outputs are tristated, enabling robust data capture in high-speed receivers.

Can UPD44164185BF5-E33Y-EQ3-A operate without its internal PLL?

Yes - pulling DLL# LOW disables the PLL, allowing UPD44164185BF5-E33Y-EQ3-A to operate at reduced clock frequencies (<300 MHz) for debug or low-power modes. However, AC/DC characteristics are not guaranteed in this mode, and read latency changes to 1.0 clock cycle per the datasheet's PLL Constraints section.

What is the purpose of the ZQ pin on UPD44164185BF5-E33Y-EQ3-A?

The ZQ pin on UPD44164185BF5-E33Y-EQ3-A serves as the output impedance calibration input. When connected to a precision resistor to ground, it sets Q, CQ, and CQ# driver impedance to 0.2 × RQ (typically 35–70 Ω). Calibration occurs automatically every 20 μs after power-up to compensate for voltage/temperature drift.