Renesas UPD44164362BF5-E40-EQ3

Overview

UPD44164362BF5-E40-EQ3 from Renesas Electronics is a 524,288-word × 36-bit synchronous double data rate (DDR) SRAM with pipelined burst operation, HSTL interface, and PLL-based timing control. It operates at 1.8 V supply, supports 250 MHz clock frequency (4.0 ns cycle time), and delivers synchronized echo clocks (CQ/CQ#) for precise data valid window alignment in high-speed memory subsystems used in network packet buffers and FPGA co-processor caches.

For engineers reviewing the UPD44164362BF5-E40-EQ3 datasheet, UPD44164362BF5-E40-EQ3 pinout, UPD44164362BF5-E40-EQ3 application, or UPD44164362BF5-E40-EQ3 equivalent, this page provides verified DDR II SRAM specifications including burst timing, HSTL I/O compliance, user-programmable output impedance (35–70 Ω), clock-stop recovery (20 μs), and JTAG 1149.1 test access - all confirmed for the exact 512K × 36 organization and 165-pin plastic BGA package.

Technical Context

This device implements a synchronous DDR architecture with dual input clocks (K/K#) latching address/control on K's rising edge and data on both K and K# edges. Its internal PLL generates tightly matched C/C# and CQ/CQ# outputs to minimize flight-time skew and enable deterministic data capture at receiving logic.

The memory uses a 2-word linear burst mode with A0 controlling burst start address, and integrates byte-write enable (BW0#–BW3#) for selective 9-bit writes across four data groups. All I/Os comply with JEDEC HSTL Class I standards, and output impedance is calibrated via ZQ pin using an external resistor to ground.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch), lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C1551KV18-250BZI and IS42S32400F-6BL, UPD44164362BF5-E40-EQ3 uniquely combines HSTL I/O, on-die impedance tuning, and echo-clock timing - enabling robust 250 MHz operation in thermally varying, high-density PCB layouts without layout-level timing closure effort.

Availability

UPD44164362BF5-E40-EQ3 is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor caches, and telecom line card memory requiring stable component supply, guaranteed lead-free packaging, and long-term industrial temperature support.

Supply support for UPD44164362BF5-E40-EQ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44164362BF5-E40-EQ3 belongs to Renesas' DDR II SRAM product line, designed specifically for high-speed, low-latency buffering in synchronous digital systems where deterministic timing, HSTL compatibility, and minimal controller overhead are critical.

FAQ

What is the operating temperature range for UPD44164362BF5-E40-EQ3?

The UPD44164362BF5-E40-EQ3 is rated for 0°C to 70°C ambient operation (industrial grade). Its ordering suffix "EQ3" confirms this temperature range, distinct from the "EQ3Y" variant rated for −40°C to +85°C. Electrical characteristics including IDD, ISB1, and AC timing parameters are fully specified across this range.

Does UPD44164362BF5-E40-EQ3 support true DDR data rates or single-data-rate operation?

UPD44164362BF5-E40-EQ3 is a true double data rate (DDR) SRAM: it transfers data on both rising edges of K and K#, achieving 500 MT/s effective throughput at 250 MHz clock. Its architecture mandates DDR timing - it does not support single-data-rate operation. The device requires strict 180° phase alignment between K and K#.

How is output impedance calibrated on UPD44164362BF5-E40-EQ3?

Output impedance on UPD44164362BF5-E40-EQ3 is calibrated via the ZQ pin, which connects to an external resistor (RQ) to ground. The device sets DQ, CQ, and CQ# output drive strength to 0.2 × RQ, yielding 35–70 Ω range. Calibration occurs automatically every 20 μs after power-up and tracks voltage/temperature drift.

Can UPD44164362BF5-E40-EQ3 operate without its PLL enabled?

Yes - pulling DLL# LOW disables the PLL, allowing operation at frequencies below 120 MHz using K/K# directly as timing references. However, AC/DC characteristics are not guaranteed in this mode, read latency changes to 1.0 clock cycle, and echo clock (CQ/CQ#) accuracy degrades. For full specification compliance, DLL# must be HIGH.

What is the function of CQ and CQ# pins on UPD44164362BF5-E40-EQ3?

CQ and CQ# are synchronous echo clock outputs tightly matched (±0.1 ns) to DQ valid/hold windows. They provide a receiver-side timing reference that eliminates flight-time skew between clock and data, enabling reliable capture without board-level delay tuning. Unlike C/C#, CQ/CQ# remain active even when DQ tristates.