Renesas UPD44164362BF5-E40X-EQ3-A

Overview

UPD44164362BF5-E40X-EQ3-A from NEC Electronics (now Renesas Electronics) is a 2,097,152-word × 9-bit synchronous DDR II SRAM with HSTL interface, 1.8 V core supply, 165-pin plastic BGA (13 × 15), and 4.0 ns clock cycle time (250 MHz). It delivers pipelined double data rate operation with separate read/write data ports for high-bandwidth buffering in network packet processors.

For engineers reviewing the UPD44164362BF5-E40X-EQ3-A datasheet, UPD44164362BF5-E40X-EQ3-A pinout, UPD44164362BF5-E40X-EQ3-A application, or UPD44164362BF5-E40X-EQ3-A equivalent, key selection criteria include burst-2 DDR timing compliance, user-programmable output impedance (35–70 Ω), echo clock (CQ/CQ#) synchronization, JTAG 1149.1 test access, and clock-stop recovery within 20 μs.

Technical Context

This device implements a synchronous peripheral architecture with dual input clocks (K/K#) latching all control and address inputs on K's rising edge and data on both K and K# rising edges. Its internal PLL enables wide output data valid windows and supports frequency scaling up to 300 MHz.

The memory array uses full-CMOS six-transistor cells and integrates a burst counter, separate read/write data paths, and echo clock outputs (CQ/CQ#) tightly matched to Q outputs for precise flight-time compensation. Output clocks C/C# provide programmable timing reference for data delivery, while DLL# allows PLL bypass during debug.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (13 × 15 mm), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C1551KV18-250BZI and IS42S16160F-6BL, UPD44164362BF5-E40X-EQ3-A uniquely combines 2M×9 density, HSTL I/O at 1.8 V, echo-clock synchronization, and clock-stop recovery - making it the only option for deterministic 250 MHz DDR buffering in compact 13×15 mm BGA footprint.

Availability

UPD44164362BF5-E40X-EQ3-A is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, baseband signal processing, industrial motion controller buffer, and telecom infrastructure requiring stable component supply across extended temperature ranges.

Supply support for UPD44164362BF5-E40X-EQ3-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The μPD44164xxx family was designed specifically for high-bandwidth, low-latency synchronous buffering in networking and test equipment - emphasizing DDR II timing precision, echo-clock alignment, and robust 1.8 V system integration.

FAQ

What is the exact memory organization and density of UPD44164362BF5-E40X-EQ3-A?

UPD44164362BF5-E40X-EQ3-A is a 2,097,152-word × 9-bit (2M × 9) DDR II SRAM, delivering 18 Mbit total density. This configuration is confirmed in the official Renesas datasheet R10DS0016EJ0200 Rev.2.00, Page 1, under "Description" and "Ordering Information" tables. The '362' suffix corresponds to the E40 speed grade (4.0 ns) and EQ3 package variant.

Does UPD44164362BF5-E40X-EQ3-A support true dual-port operation with simultaneous read and write?

Yes, UPD44164362BF5-E40X-EQ3-A implements physically separate read and write data paths (D0–D8 and Q0–Q8), enabling concurrent access without bus contention. As stated in the datasheet "Features" section (Page 1), it provides "Separate independent read and write data ports", and the block diagram (Page 7) confirms distinct input registry and output register paths feeding the same memory array.

What is the role of CQ and CQ# pins on UPD44164362BF5-E40X-EQ3-A, and how are they timed?

CQ and CQ# are synchronous echo clock outputs tightly matched to Q data outputs (±0.1 ns variation), providing a receiver-side data-valid indication. Per datasheet Page 5 and Page 17, CQ/CQ# rise edges align precisely with Q data transitions and remain active even when Q tristates. They are used instead of C/C# for timing-critical receivers needing minimal skew between clock and data.

Can UPD44164362BF5-E40X-EQ3-A operate without its internal PLL enabled?

Yes - pulling DLL# LOW disables the PLL, allowing operation at frequencies below the minimum rated 200 MHz (TKHKH min). However, as noted on Page 6 and Page 17, AC/DC characteristics are not guaranteed in this mode, and read latency changes to 1.0 clock cycle. For full-spec operation, DLL# must be tied HIGH (e.g., to VDDQ via ≤10 kΩ resistor).

How does the ZQ pin function for output impedance control on UPD44164362BF5-E40X-EQ3-A?

ZQ is an input pin used to calibrate Q, CQ, and CQ# output driver impedance to match the system data bus. As detailed on Page 6 and Page 13, connecting ZQ to ground through an external resistor (175–350 Ω) sets output impedance to 0.2 × RQ. Direct connection to VDDQ minimizes impedance; ZQ must never be left floating or tied to VSS.