Renesas UPD44165084BF5-E40-EQ3

Overview

UPD44165084BF5-E40-EQ3 from Renesas Electronics is a 2,097,152-word × 8-bit synchronous quad data rate (QDR II) SRAM with 4-word burst operation, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (13 × 15) packaging. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and is used in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the UPD44165084BF5-E40-EQ3 datasheet, UPD44165084BF5-E40-EQ3 pinout, UPD44165084BF5-E40-EQ3 application, or UPD44165084BF5-E40-EQ3 equivalent, key selection considerations include its QDR II timing architecture, dual-clock (K/K# and C/C#) synchronization, user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), and JTAG 1149.1 test access.

Technical Context

The UPD44165084BF5-E40-EQ3 implements a true QDR II architecture with separate, independent read and write data paths enabling simultaneous transactions. Its internal burst counter and synchronous peripheral circuitry register all inputs on the rising edge of K and K#, while output data is synchronized to C and C# rising edges for precise flight-time matching.

It integrates a PLL for wide output data valid window and future frequency scaling, supports four-tick burst addressing to reduce address bus frequency, and features internally self-timed write control with clock-stop mode that restores normal operation within 20 μs after clock resumption.

Key Specifications

Pinout & Package

UPD44165084BF5-E40-EQ3 is housed in a 165-pin plastic BGA (13 × 15 mm) package with standard ball pitch and land pattern per Renesas specification R10DS0018EJ0200. The package supports lead-free assembly and includes dedicated power/ground balls for noise suppression and impedance-controlled I/O routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1722KV18-250BZI and AS7C33256P-25JCIN, the UPD44165084BF5-E40-EQ3 uniquely delivers true concurrent QDR II operation at 250 MHz in an 8-bit configuration with HSTL signaling-making it irreplaceable for high-throughput, low-latency packet memory where dual-port bandwidth and precise timing alignment are mandatory.

Availability

UPD44165084BF5-E40-EQ3 is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card memory, and baseband processing cache requiring stable component supply across extended production lifecycles.

Supply support for UPD44165084BF5-E40-EQ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44165084BF5-E40-EQ3 belongs to Renesas' QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth memory applications in networking and communications equipment where dual-port concurrency and sub-5 ns timing precision are essential.

FAQ

What is the maximum clock frequency supported by the UPD44165084BF5-E40-EQ3?

The UPD44165084BF5-E40-EQ3 is rated for a maximum clock frequency of 250 MHz, corresponding to a 4.0 ns cycle time. This specification is validated under commercial temperature conditions (0 °C to +70 °C) with VDD = 1.8 V ± 0.1 V and meets all AC timing parameters defined in Renesas datasheet R10DS0018EJ0200 Rev.2.00. Operation beyond this frequency is not guaranteed.

Does the UPD44165084BF5-E40-EQ3 support true concurrent read and write operations?

Yes, the UPD44165084BF5-E40-EQ3 supports true concurrent read and write operations via physically separate data paths. During a single clock cycle, it can accept new write data on D0–D7 while simultaneously delivering previously requested read data on Q0–Q7-enabling full-duplex memory access critical for packet buffering and streaming applications.

How is output impedance calibrated on the UPD44165084BF5-E40-EQ3?

Output impedance on the UPD44165084BF5-E40-EQ3 is calibrated using the ZQ pin, which connects to an external resistor (RQ) tied to ground. The device sets Q, CQ, and CQ# output impedance to 0.2 × RQ, yielding a programmable range of 35–70 Ω. Calibration occurs automatically every 20 μs after power-up and tracks supply voltage and temperature drift.

Can the UPD44165084BF5-E40-EQ3 operate without its PLL enabled?

Yes-the UPD44165084BF5-E40-EQ3 can operate with its PLL disabled by pulling DLL# LOW. In this mode, the device functions at reduced clock frequencies below 120 MHz without PLL locking, but AC and DC electrical characteristics are not guaranteed. For full-spec operation at 250 MHz, DLL# must be held HIGH (e.g., tied to VDDQ via ≤10 kΩ resistor).

What is the purpose of the C and C# pins on the UPD44165084BF5-E40-EQ3?

The C and C# pins on the UPD44165084BF5-E40-EQ3 serve as user-controlled output clocks that define the timing reference for data output delivery. C# rising edge clocks the first and third data words; C rising edge clocks the second and fourth-enabling precise flight-time matching between clock and data signals at the receiving device, which is essential for high-speed DDR interfaces.