Renesas UPD44165182BF5-E40-EQ3

Overview

UPD44165182BF5-E40-EQ3 from Renesas Electronics is a 1,048,576-word × 18-bit synchronous QDR II SRAM with 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, HSTL I/O interface, and 165-pin plastic BGA (13 × 15) package. It supports concurrent read/write operations, burst-2 DDR transactions, and clock-stop mode with 20 μs recovery - deployed in high-bandwidth network packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the UPD44165182BF5-E40-EQ3 datasheet, UPD44165182BF5-E40-EQ3 pinout, UPD44165182BF5-E40-EQ3 application, or UPD44165182BF5-E40-EQ3 equivalent, key selection criteria include its dual-port burst timing, user-programmable output impedance (35–70 Ω), JTAG 1149.1 test access, and precise echo clock (CQ/CQ#) alignment for high-speed signal integrity validation.

Technical Context

This QDR II SRAM employs full-CMOS six-transistor memory cells and integrates a PLL-based DLL for jitter-tolerant operation across 200–300 MHz. Its synchronous architecture uses separate K/K# input clocks for address/control registration and C/C# output clocks for data timing - enabling deterministic flight-time matching between clock and data at the receiver.

The device implements independent read and write data paths with concurrent transaction capability, two-tick burst addressing, and byte-write control via BW0#/BW1#. All inputs are registered on K rising edge (READ) or K# rising edge (WRITE); outputs are synchronized to C/C# rising edges, with echo clocks CQ/CQ# tightly matched to data valid windows.

Key Specifications

Pinout & Package

165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch), RoHS-compliant, lead-free finish. Pin mapping follows JEDEC MO-251 standard with index mark at corner A1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-400BZI and AS7C3256A-15JIN, UPD44165182BF5-E40-EQ3 provides optimal balance of 250 MHz performance, flexible 1.8 V/1.5 V I/O, and on-die impedance control - reducing BOM count and layout complexity in high-reliability telecom and test systems.

Availability

UPD44165182BF5-E40-EQ3 is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor memory, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for UPD44165182BF5-E40-EQ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44165182BF5-E40-EQ3 belongs to Renesas' QDR II SRAM family, engineered for ultra-low-latency, high-throughput memory interfacing in next-generation networking and signal processing systems.

FAQ

What is the maximum operating frequency supported by UPD44165182BF5-E40-EQ3?

UPD44165182BF5-E40-EQ3 supports up to 250 MHz operation with a guaranteed 4.0 ns clock cycle time. This rating applies across the full 0°C to +70°C ambient temperature range and is validated under worst-case voltage (VDD = 1.7 V) and process corners. The device's PLL/DLL remains locked and functional at this frequency, ensuring stable burst-2 DDR timing without external timing margining.

Does UPD44165182BF5-E40-EQ3 support true concurrent read and write operations?

Yes, UPD44165182BF5-E40-EQ3 implements physically separate read and write data paths, allowing simultaneous READ and WRITE transactions without arbitration delay. The block diagram confirms independent address registry, data registry, and output select logic - enabling 100% bus utilization in DDR mode, as verified in the Truth Table and Bus Cycle State Diagram of the datasheet.

How is output impedance calibrated on UPD44165182BF5-E40-EQ3?

UPD44165182BF5-E40-EQ3 uses the ZQ pin to calibrate output driver impedance. A resistor (RQ = 175–350 Ω) is connected from ZQ to ground, setting Q, CQ, and CQ# output impedance to 0.2 × RQ. Calibration occurs automatically every 20 μs after power-up and tracks supply/temperature drift. Direct connection of ZQ to VDDQ minimizes impedance; grounding or leaving it floating is prohibited.

Can UPD44165182BF5-E40-EQ3 operate without an external PLL or DLL circuit?

Yes - UPD44165182BF5-E40-EQ3 integrates a fully self-contained PLL/DLL. When DLL# is held HIGH (default), the internal PLL locks to the K clock within 20 μs and provides jitter-clean C/C# and CQ/CQ# outputs. If DLL# is pulled LOW, the PLL is disabled and the device operates in "single-clock mode" using K/K# for all timing - though AC/DC specs are not guaranteed in this mode.

What is the purpose of the CQ and CQ# pins on UPD44165182BF5-E40-EQ3?

CQ and CQ# are synchronous echo clock outputs tightly matched to Q data outputs (±0.35 ns skew). They serve as hardware data-valid indicators at the receiving end - eliminating need for complex deskew logic. Unlike C/C#, CQ/CQ# continue running even when Q outputs are tristated, and they remain active during clock-stop mode, providing consistent timing references across power states.