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Renesas UPD44165182BF5-E50Y-EQ3-A

Part No.:
UPD44165182BF5-E50Y-EQ3-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD44165182BF5-E50Y-EQ3-A.pdf
Description:
QDR SRAM, 1MX18, 0.45NS
Quantity:
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Payment
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Inventory:2,088

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Product details

Overview

UPD44165182BF5-E50Y-EQ3-A from Renesas Electronics is a 1,048,576-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with 5.0 ns clock cycle time (200 MHz), 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (13 × 15) package. It supports concurrent read/write ports, burst-2 operation, and clock-stop capability for low-power system states in high-bandwidth networking buffers.

For engineers reviewing the UPD44165182BF5-E50Y-EQ3-A datasheet, UPD44165182BF5-E50Y-EQ3-A pinout, UPD44165182BF5-E50Y-EQ3-A application, or UPD44165182BF5-E50Y-EQ3-A equivalent, key selection considerations include its −40°C to +85°C industrial temperature rating, user-programmable output impedance (35–70 Ω), dual-clock timing architecture (K/K# input, C/C# output), and JTAG 1149.1 test access support.

Technical Context

This QDR II SRAM employs full-CMOS six-transistor memory cells and integrates a PLL-based DLL for precise output data valid window control and frequency scalability. Its synchronous peripheral circuitry latches all inputs on the rising edge of K (read/control) and K# (write address/data), enabling deterministic DDR timing without external phase alignment.

The device implements independent read and write data paths with concurrent transaction capability, two-tick burst addressing, and internally self-timed write control. Output clocks C/C# deliver synchronized data with matched flight time, while echo clocks CQ/CQ# provide tight data-valid indication aligned to Q outputs.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1,048,576 words × 18 bits (18 Mbit total density)
Clock Cycle Time 5.0 ns - supports 200 MHz system clock with guaranteed timing margins at −40°C to +85°C
Supply Voltage 1.8 V ± 0.1 V (VDD); isolated 1.4–1.8 V (VDDQ) for I/O buffer control
Interface Standard HSTL Class I - compatible with JEDEC-compliant 1.5 V I/O systems using VREF = VDDQ/2
Operating Temperature −40°C to +85°C - qualified for industrial embedded and telecom infrastructure applications
Package 165-pin plastic BGA (13 mm × 15 mm, 0.8 mm pitch) - RoHS-compliant, lead-free
Power Consumption 570 mA typical operating current (IDD) and 410 mA standby (ISB1) at 200 MHz, −40°C to +85°C

Pinout & Package

UPD44165182BF5-E50Y-EQ3-A is housed in a 165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch) with standard ball grid layout optimized for signal integrity in high-speed DDR memory subsystems. Pin functions follow JEDEC HSTL Class I definitions and include dedicated echo clocks (CQ/CQ#), output impedance tuning (ZQ), and IEEE 1149.1 JTAG test access (TCK/TMS/TDI/TDO).

Pin/Terminal Circuit Role Design Meaning
K, K# Input Clock Pair Rising-edge-triggered synchronous interface: K latches read/control signals; K# latches write address/data - enables precise DDR timing separation
C, C# Output Clock Pair User-controlled timing reference for Q outputs; rising edges define first/second burst word validity - eliminates board-level skew compensation
CQ, CQ# Echo Clock Outputs Edge-aligned with Q data outputs; provides hardware-validated data-ready signal without added latency or routing complexity
R#, W# Read/Write Control Active-low synchronous commands registered on K rising edge - supports pipelined burst transactions with no external handshake logic
BW0#, BW1# Byte Write Enables Selectively write D0–D8 or D9–D17 during single burst - enables partial-word updates without read-modify-write overhead
ZQ Impedance Calibration Input Connects to external resistor to ground to set Q/CQ/CQ# output impedance to 0.2 × RQ - ensures consistent 35–70 Ω drive matching across voltage/temperature
VREF HSTL Reference Input Nominally VDDQ/2; sets input threshold for all address/control/data pins - enables stable noise margin in high-speed parallel buses
TCK, TMS, TDI, TDO JTAG Test Interface Fully compliant with IEEE 1149.1; supports boundary-scan testing and in-system programming - reduces production test development effort

Key Features

Feature Design Value
Concurrent Read/Write Ports Enables full 100% bus utilization in packet buffering applications - eliminates arbitration delays between ingress/egress data paths
Two-Tick Burst Operation Fixed 2-word burst minimizes command overhead and maximizes bandwidth efficiency in cache-line-aligned memory access patterns
Programmable Output Impedance 35–70 Ω range via ZQ resistor - eliminates need for external series termination resistors and simplifies PCB layout
PLL-Based DLL Circuitry Provides wide output data valid window and supports future frequency scaling up to 300 MHz - extends design longevity without hardware change
Integrated Clock-Stop Mode Enters low-power state within 20 μs of clock halt; resumes normal operation identically - ideal for dynamic power management in bursty traffic scenarios

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in carrier-grade switches and routers.

IC Role / Device Role / Timing Role: Dual-port QDR II SRAM serving as shared buffer between MAC and switch fabric interfaces with simultaneous read/write access.

Use Value: Concurrent port operation delivers 400 MB/s effective bandwidth at 200 MHz, eliminating bottleneck in 10Gbps+ line-rate processing.

Use Scenario: Holding configuration tables and real-time statistics in optical transport network (OTN) line cards.

IC Role / Device Role / Timing Role: High-reliability SRAM with industrial temperature rating storing provisioning data and performance counters accessed by multiple ASICs.

Use Value: −40°C to +85°C qualification and JTAG test support ensure field reliability and simplified manufacturing test coverage.

Baseband Processing Memory High-Speed Test Equipment Buffer

Use Scenario: Acting as intermediate data store between ADC/DAC and FPGA-based digital signal processors in wireless base stations.

IC Role / Device Role / Timing Role: Synchronous burst-memory interfacing directly with FPGA I/O banks using HSTL signaling and echo clocks for timing closure.

Use Value: CQ/CQ# echo clocks align precisely with Q outputs, reducing FPGA timing budget pressure and enabling higher-frequency FPGA designs.

Use Scenario: Capturing high-speed serial data streams during automated test equipment (ATE) validation of SerDes PHYs.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory capturing multi-gigabit samples with precise timestamp correlation via synchronized C/C# clocks.

Use Value: 5.0 ns cycle time and sub-nanosecond output hold times (TCHQX = −0.45 ns) guarantee accurate capture of 200+ MHz parallel test vectors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2665KV18 1M × 18, 5 ns cycle, 1.8 V, 165-pin BGA - identical organization and timing but Cypress-specific JTAG implementation and no ZQ calibration Lacks programmable output impedance; requires external termination resistors - increases PCB layer count and signal integrity risk Choose when legacy Cypress toolchain compatibility is required and board space allows discrete termination.
AS7C3318B 1M × 18, 5.5 ns cycle, 1.8 V, 165-pin BGA - slower max frequency (182 MHz), no integrated DLL, no echo clocks No CQ/CQ# or DLL - limits timing margin in high-speed systems and removes hardware data-valid indication Choose only for cost-sensitive, lower-bandwidth applications where 200 MHz operation and precise timing alignment are not required.

Compared with CY7C2665KV18 and AS7C3318B, UPD44165182BF5-E50Y-EQ3-A delivers superior timing precision via echo clocks and adaptive impedance control, enabling robust 200 MHz operation in thermally demanding industrial environments without layout compromises.

Availability

UPD44165182BF5-E50Y-EQ3-A is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing applications requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for UPD44165182BF5-E50Y-EQ3-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

UPD44165182BF5-E50Y-EQ3-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking infrastructure and real-time signal processing equipment.

FAQ

What is the operating temperature range of UPD44165182BF5-E50Y-EQ3-A?

UPD44165182BF5-E50Y-EQ3-A is rated for industrial operation from −40°C to +85°C, as confirmed in the "Ordering Information" section of the R10DS0017EJ0200 datasheet (Page 3). This range is validated across all electrical characteristics including IDD, ISB1, and AC timing parameters under VDD = 1.8 ± 0.1 V conditions.

Does UPD44165182BF5-E50Y-EQ3-A support JTAG boundary-scan testing?

Yes, UPD44165182BF5-E50Y-EQ3-A integrates a fully compliant IEEE 1149.1 test access port with dedicated TCK, TMS, TDI, and TDO pins operating at 1.8 V I/O level. The "Pin Description" section (Page 7) confirms these signals are functional and may be left unconnected only if JTAG is unused in the target system.

How does the ZQ pin function in UPD44165182BF5-E50Y-EQ3-A?

The ZQ pin on UPD44165182BF5-E50Y-EQ3-A connects to an external resistor to ground to calibrate output driver impedance. As specified on Page 8, Q, CQ, and CQ# outputs are set to 0.2 × RQ, enabling precise 35–70 Ω matching. Calibration occurs every 20 μs after power-up and tracks voltage/temperature drift.

What clocking architecture does UPD44165182BF5-E50Y-EQ3-A use for read operations?

UPD44165182BF5-E50Y-EQ3-A uses dual clock pairs: K/K# for input synchronization and C/C# for output timing. During reads, data is delivered synchronized to C/C# rising edges (first word on C#↑, second on C↑), as defined in the "Pin Description" (Page 7) and "Truth Table" (Page 11).

Can UPD44165182BF5-E50Y-EQ3-A operate without its internal PLL?

Yes - pulling DLL# LOW disables the PLL, allowing operation at frequencies below TKHKH (MAX.) for debug or low-speed validation. However, the datasheet (Page 8) explicitly states AC/DC characteristics are not guaranteed in this mode, and DLL# must be HIGH (tied to VDDQ) for production operation.

UPD44165182BF5-E50Y-EQ3-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD44165182BF5-E50Y-EQ3-A FAQ

1.How can I place an order for UPD44165182BF5-E50Y-EQ3-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44165182BF5-E50Y-EQ3-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44165182BF5-E50Y-EQ3-A reliable?

The price and inventory of UPD44165182BF5-E50Y-EQ3-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44165182BF5-E50Y-EQ3-A is usually 5 days.

3.What payment methods are accepted for UPD44165182BF5-E50Y-EQ3-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44165182BF5-E50Y-EQ3-A transactions.

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4.How is shipping managed for UPD44165182BF5-E50Y-EQ3-A?

UPD44165182BF5-E50Y-EQ3-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44165182BF5-E50Y-EQ3-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44165182BF5-E50Y-EQ3-A?

For technical support, including UPD44165182BF5-E50Y-EQ3-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44165182BF5-E50Y-EQ3-A requirements.

6.How does Aetrix verify that UPD44165182BF5-E50Y-EQ3-A is sourced from the original manufacturer or authorized distributors?

All UPD44165182BF5-E50Y-EQ3-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44165182BF5-E50Y-EQ3-A meets industry standards.

7.What is the process for return or replacement of UPD44165182BF5-E50Y-EQ3-A?

All UPD44165182BF5-E50Y-EQ3-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44165182BF5-E50Y-EQ3-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44165182BF5-E50Y-EQ3-A part is unused and in its original packaging.

Return procedure for UPD44165182BF5-E50Y-EQ3-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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