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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD44165362BF5-E40-EQ3

Name: UPD44165362BF5-E40-EQ3
Brand: Renesas
SKU: UPD44165362BF5-E40-EQ3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD44165362BF5-E40-EQ3

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD44165362BF5-E40-EQ3.pdf

Description:: QDR SRAM, 512KX36, 0.45NS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

UPD44165362BF5-E40-EQ3 from Renesas Electronics is a 524,288-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with 1.8 V core supply, 4.0 ns clock cycle time (250 MHz), HSTL interface, and 165-pin plastic BGA (13 × 15) packaging. It supports concurrent read/write operations, two-word burst, and user-programmable output impedance (35–70 Ω), targeting high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the UPD44165362BF5-E40-EQ3 datasheet, UPD44165362BF5-E40-EQ3 pinout, UPD44165362BF5-E40-EQ3 application, or UPD44165362BF5-E40-EQ3 equivalent, key selection criteria include its QDR II architecture, 36-bit wide data bus, 250 MHz operation under industrial temperature (−40 to +85°C), HSTL I/O compatibility, and dual-clock timing control (K/K# for input, C/C# for output).

Technical Context

This device implements a true dual-port QDR II architecture with physically separate read and write data paths, enabling simultaneous read and write transactions without arbitration delay. Its internal PLL locks to the K clock input to generate precise internal timing for echo clocks (CQ/CQ#) and output data alignment.

The memory uses full-CMOS six-transistor cells and integrates burst counters, JTAG 1149.1 test access, and programmable output impedance via ZQ calibration. All control inputs (R#, W#, BW0#–BW3#) are registered on the rising edge of K, while data inputs are latched on both K and K# edges to support DDR-style write cycles.

Key Specifications

Parameter	Value and Actual Design Meaning
Organization	524,288 words × 36 bits = 18 Mbit density; enables single-chip 36-bit-wide buffering for high-throughput interconnects.
Clock cycle time	4.0 ns (250 MHz); defines maximum sustained data transfer rate of 500 MT/s per data line in burst mode.
Supply voltage	VDD = 1.8 ± 0.1 V; requires tightly regulated low-noise 1.8 V rail; VDDQ = 1.4–1.8 V for I/O buffers.
Interface standard	HSTL Class I compliant; ensures signal integrity at 250 MHz with controlled-impedance PCB routing and VREF = VDDQ/2 reference.
Operating temperature	−40°C to +85°C; qualified for industrial networking equipment deployed in uncontrolled environments.
Package	165-pin plastic BGA (13 × 15 mm); supports high-density routing with 0.8 mm ball pitch and thermal pad for junction-to-case conduction.
Burst length	Fixed 2-word burst; delivers two consecutive data words per clock transition, achieving 100% bus utilization in DDR read/write cycles.

Pinout & Package

Package: 165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch), RoHS-compliant, with exposed thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Synchronous address inputs	18-bit address bus registered on K rising edge for read; K# rising edge for write; supports 512K-word addressing.
D0–D35	Synchronous data inputs	36-bit parallel write data path; latched on both K and K# rising edges during burst write cycles.
Q0–Q35	Synchronous data outputs	36-bit parallel read data path; synchronized to C/C# rising edges (or K/K# if C/C# tied HIGH).
R#, W#	Read/write command inputs	Active-low, registered on K rising edge; enable concurrent read and write operations when asserted independently.
BW0#–BW3#	Byte write enable inputs	Four independent 9-bit byte masks; allow partial writes of D0–D8, D9–D17, D18–D26, or D27–D35 within one burst.
K, K#	Input clock pair	Differential clock inputs; K rising edge registers addresses/control; K# rising edge registers write data; phase-aligned for DDR timing.
C, C#	Output clock pair	User-controlled output timing reference; C# rising edge clocks first output word, C rising edge clocks second word; enables flight-time matching.
CQ, CQ#	Echo clock outputs	Output-synchronized clocks tightly matched to Q outputs; provide data-valid indication without requiring external timing margining.
ZQ	Impedance calibration input	Connects to external resistor to ground (175–350 Ω) to calibrate Q/CQ/CQ# output driver impedance to 35–70 Ω.
VDD, VDDQ, VSS	Power/ground supplies	VDD (1.8 V core), VDDQ (1.4–1.8 V I/O), VSS (common ground); require separate decoupling and sequencing per power-on requirements.
VREF	HSTL reference input	Nominally VDDQ/2; provides threshold reference for all HSTL input buffers; must be stable before clock initialization.
DLL#	PLL disable input	Active-low; forces bypass of internal PLL for low-frequency debug; must be HIGH (tied to VDDQ) for normal 250 MHz operation.
TMS, TDI, TCK, TDO	JTAG 1149.1 interface	IEEE-standard boundary-scan test port; operates at 1.8 V I/O level; TCK must be tied to VSS if unused.

Key Features

Feature	Design Value
Concurrent read/write ports	Enables full-duplex memory access-critical for pipeline architectures where ingress packets are written while egress packets are read simultaneously.
Two-tick burst operation	Delivers two data words per clock cycle with no dead cycles, maximizing bandwidth efficiency in burst-limited protocols like PCI Express or Ethernet MAC interfaces.
Programmable output impedance (35–70 Ω)	Allows dynamic tuning to match PCB trace impedance without external termination resistors, reducing component count and improving signal fidelity at 250 MHz.
Separate input/output clock pairs (K/K# and C/C#)	Decouples input setup/hold timing from output flight-time skew, enabling precise source-synchronous timing closure across multi-inch board traces.
Internally self-timed write control	Eliminates need for external write-enable pulse generation; simplifies controller logic and guarantees write completion within fixed latency regardless of clock jitter.
PLL-based output data valid window extension	Widens data valid window by compensating for clock skew and propagation delay, easing timing margining for high-speed FPGA or ASIC interfaces.

Applications

High-Speed Network Switch Buffering	Telecom Line Card Packet Memory
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/L3 switching fabric with sub-10 ns latency requirements. IC Role / Device Role / Timing Role: Dual-port QDR II SRAM acting as shared buffer between ingress parser and egress scheduler, synchronized to system clock domain via K/K# and C/C#. Use Value: 36-bit width matches common switch fabric data buses; 250 MHz operation sustains 18 Gbps aggregate throughput; concurrent ports eliminate arbitration stalls.	Use Scenario: Temporary storage of ATM or IP packets in carrier-grade DSLAM or OLT line cards operating in −40°C to +85°C ambient. IC Role / Device Role / Timing Role: High-reliability packet buffer interfacing with SerDes PHYs and traffic management ASICs using HSTL signaling. Use Value: Industrial temperature rating ensures uptime in outdoor cabinets; HSTL I/O meets telecom signal integrity specs; ZQ calibration maintains impedance match over temperature drift.
Baseband Processing in Wireless Infrastructure	FPGA-Based Protocol Acceleration
Use Scenario: Real-time buffering of IQ samples between RF front-end ADC/DAC and digital predistortion (DPD) engine in 4G/5G massive MIMO radios. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory co-located with FPGA-based DPD logic, clocked synchronously to baseband sampling clock. Use Value: 4.0 ns cycle time aligns with 250 MSPS sampling rates; burst mode matches FFT/IFFT block sizes; DLL# pin allows safe low-speed validation prior to full-rate deployment.	Use Scenario: Offloading TCP/IP checksum, encryption, or deep packet inspection tasks from host CPU using custom FPGA accelerator with local memory. IC Role / Device Role / Timing Role: Local scratchpad memory tightly coupled to FPGA logic fabric, accessed via native QDR II interface with zero-wait-state timing. Use Value: 165-pin BGA footprint fits dense FPGA carrier boards; JTAG support enables in-system verification; clock-stop capability reduces power during idle intervals.

High-Speed Network Switch Buffering

Telecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/L3 switching fabric with sub-10 ns latency requirements.

IC Role / Device Role / Timing Role: Dual-port QDR II SRAM acting as shared buffer between ingress parser and egress scheduler, synchronized to system clock domain via K/K# and C/C#.

Use Value: 36-bit width matches common switch fabric data buses; 250 MHz operation sustains 18 Gbps aggregate throughput; concurrent ports eliminate arbitration stalls.

Use Scenario: Temporary storage of ATM or IP packets in carrier-grade DSLAM or OLT line cards operating in −40°C to +85°C ambient.

IC Role / Device Role / Timing Role: High-reliability packet buffer interfacing with SerDes PHYs and traffic management ASICs using HSTL signaling.

Use Value: Industrial temperature rating ensures uptime in outdoor cabinets; HSTL I/O meets telecom signal integrity specs; ZQ calibration maintains impedance match over temperature drift.

Baseband Processing in Wireless Infrastructure

FPGA-Based Protocol Acceleration

Use Scenario: Real-time buffering of IQ samples between RF front-end ADC/DAC and digital predistortion (DPD) engine in 4G/5G massive MIMO radios.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory co-located with FPGA-based DPD logic, clocked synchronously to baseband sampling clock.

Use Value: 4.0 ns cycle time aligns with 250 MSPS sampling rates; burst mode matches FFT/IFFT block sizes; DLL# pin allows safe low-speed validation prior to full-rate deployment.

Use Scenario: Offloading TCP/IP checksum, encryption, or deep packet inspection tasks from host CPU using custom FPGA accelerator with local memory.

IC Role / Device Role / Timing Role: Local scratchpad memory tightly coupled to FPGA logic fabric, accessed via native QDR II interface with zero-wait-state timing.

Use Value: 165-pin BGA footprint fits dense FPGA carrier boards; JTAG support enables in-system verification; clock-stop capability reduces power during idle intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C2665KV18-400BZXC	512K × 36, 400 MHz (2.5 ns), 1.8 V core, 165-pin BGA; higher speed grade but identical organization and interface.	Requires tighter timing closure and higher-power supply design; not rated for −40°C to +85°C (only 0°C to +70°C).	Select when 400 MHz bandwidth is required and industrial temperature is not mandatory.
AS7C336200B-400BIN	512K × 36, 400 MHz, 1.8 V, 165-pin BGA; pin-compatible but uses SSTL instead of HSTL I/O standard.	Requires different VREF and termination scheme; incompatible with HSTL-only controllers without level-shifting.	Select only if existing board design already implements SSTL-18 infrastructure and 400 MHz is needed.

Compared with CY7C2665KV18-400BZXC and AS7C336200B-400BIN, UPD44165362BF5-E40-EQ3 offers guaranteed industrial temperature operation and native HSTL compliance-critical for telecom and embedded networking where thermal stability and signal integrity outweigh raw speed.

Availability

UPD44165362BF5-E40-EQ3 is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card buffering, and FPGA-based protocol acceleration requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD44165362BF5-E40-EQ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The UPD44165362BF5-E40-EQ3 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched networks and real-time signal processing systems demanding deterministic access and industrial reliability.

FAQ

What is the memory organization and total capacity of UPD44165362BF5-E40-EQ3?

UPD44165362BF5-E40-EQ3 is organized as 524,288 words × 36 bits, delivering 18,874,368 bits (18 Mbit) of synchronous static RAM. This configuration supports 36-bit-wide data transfers and is optimized for applications requiring high-bandwidth, low-latency buffering such as network packet processing and baseband signal storage. The device uses full-CMOS six-transistor memory cells for reliability and low power.

Does UPD44165362BF5-E40-EQ3 support concurrent read and write operations?

Yes, UPD44165362BF5-E40-EQ3 implements a true dual-port QDR II architecture with physically independent read and write data paths. This allows simultaneous read and write transactions without arbitration delay-enabling full-duplex operation critical for pipeline architectures in switches, routers, and FPGA accelerators. Control signals R# and W# are registered separately on the K clock edge to ensure deterministic timing.

What are the power supply requirements for UPD44165362BF5-E40-EQ3?

UPD44165362BF5-E40-EQ3 requires two dedicated supplies: VDD = 1.8 ± 0.1 V for core logic and VDDQ = 1.4 V to 1.8 V for I/O buffers. VREF must be set to VDDQ/2 (0.68–0.95 V). Power sequencing mandates VDD applied before VDDQ, and both must stabilize before applying clock; DLL# must be held HIGH during initialization. Violating these conditions risks undefined behavior or failed PLL lock.

How does the ZQ pin function in UPD44165362BF5-E40-EQ3?

The ZQ pin on UPD44165362BF5-E40-EQ3 is an impedance calibration input that tunes the output drivers (Q, CQ, CQ#) to match the system data bus. It connects to a precision resistor (175–350 Ω) to ground, setting output impedance to 0.2 × RQ (35–70 Ω). Calibration occurs automatically every 20 μs after power-up. ZQ must never be left floating or tied directly to VSS-it must be connected to the resistor or pulled to VDDQ to minimize impedance.

Is UPD44165362BF5-E40-EQ3 compatible with JTAG boundary-scan testing?

Yes, UPD44165362BF5-E40-EQ3 includes a fully compliant IEEE 1149.1 JTAG test access port (TMS, TDI, TCK, TDO) operating at 1.8 V I/O level. TCK must be tied to VSS if JTAG is unused; TMS and TDI may be left unconnected. This enables in-system verification, interconnect testing, and programming support during board manufacturing and field diagnostics-enhancing test coverage for high-reliability networking hardware.

UPD44165362BF5-E40-EQ3 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD44165362BF5-E40-EQ3 FAQ

1.How can I place an order for UPD44165362BF5-E40-EQ3 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44165362BF5-E40-EQ3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44165362BF5-E40-EQ3 reliable?

The price and inventory of UPD44165362BF5-E40-EQ3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44165362BF5-E40-EQ3 is usually 5 days.

3.What payment methods are accepted for UPD44165362BF5-E40-EQ3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44165362BF5-E40-EQ3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44165362BF5-E40-EQ3?

UPD44165362BF5-E40-EQ3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44165362BF5-E40-EQ3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44165362BF5-E40-EQ3?

For technical support, including UPD44165362BF5-E40-EQ3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44165362BF5-E40-EQ3 requirements.

6.How does Aetrix verify that UPD44165362BF5-E40-EQ3 is sourced from the original manufacturer or authorized distributors?

All UPD44165362BF5-E40-EQ3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44165362BF5-E40-EQ3 meets industry standards.

7.What is the process for return or replacement of UPD44165362BF5-E40-EQ3?

All UPD44165362BF5-E40-EQ3 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44165362BF5-E40-EQ3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44165362BF5-E40-EQ3 part is unused and in its original packaging.

Return procedure for UPD44165362BF5-E40-EQ3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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