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Renesas UPD44165362BF5-E50-EQ3-A

Part No.:
UPD44165362BF5-E50-EQ3-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD44165362BF5-E50-EQ3-A.pdf
Description:
QDR SRAM, 512KX36, 0.45NS
Quantity:
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Payment
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Inventory:737

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Product details

Overview

UPD44165362BF5-E50-EQ3-A from Renesas Electronics is a 524,288-word × 36-bit (18-Mbit) synchronous Quad Data Rate II (QDR-II) SRAM with 2-word burst operation, HSTL interface, and 1.8 V core supply. It delivers 200 MHz clock frequency (5.0 ns cycle time), supports concurrent read/write ports, and operates in 0 to 70°C ambient temperature. It is used in high-speed networking packet buffers and FPGA co-processor memory subsystems requiring deterministic DDR timing.

For engineers reviewing the UPD44165362BF5-E50-EQ3-A datasheet, UPD44165362BF5-E50-EQ3-A pinout, UPD44165362BF5-E50-EQ3-A application, or UPD44165362BF5-E50-EQ3-A equivalent, key selection considerations include its 165-pin plastic BGA (13×15) package, dual-clock (K/K# and C/C#) timing architecture, user-programmable output impedance (35–70 Ω), PLL-enabled wide data-valid window, and JTAG 1149.1 test access support.

Technical Context

This QDR-II SRAM employs full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter, DLL/PLL for clock deskew and flight-time matching, and independent read/write data paths enabling true concurrent transactions. Its dual-clock system separates address/control registration (on K/K# rising edges) from output timing (synchronized to C/C# rising edges), ensuring precise DDR data delivery.

The device implements HSTL Class I I/O with programmable termination via ZQ pin, supports clock-stop mode with 20 μs recovery, and uses separate VDD (1.8 V) and VDDQ (1.4–1.8 V) supplies to isolate core logic from I/O drivers. Byte write control (BW0#–BW3#) enables selective 9-bit sub-word writes within the 36-bit data bus.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization524,288 words × 36 bits (18 Mbit total)
Clock Frequency200 MHz - enables 400 MT/s effective data rate per data line
Cycle Time5.0 ns - defines minimum clock period for reliable burst read/write
Supply VoltageVDD = 1.7–1.9 V, VDDQ = 1.4–VDD - dual-rail power for noise isolation
I/O InterfaceHSTL Class I - compatible with JEDEC-compliant 1.5 V–1.8 V systems
Operating Temperature0 to 70°C - commercial-grade thermal range for embedded infrastructure
Package165-pin plastic BGA (13 mm × 15 mm) - surface-mount footprint with 0.8 mm pitch

Pinout & Package

UPD44165362BF5-E50-EQ3-A is housed in a 165-pin plastic BGA (13 × 15 array, 0.8 mm pitch) with exposed thermal pad. Pin functions are defined per the μPD44165362B-specific top-view layout on page 6 of R10DS0017EJ0200 Rev.2.00.

Pin/Terminal Circuit Role Design Meaning
K, K#Input Clock PairRegisters address/control on K↑ and write data on K#↑; 180° phase relationship required
C, C#Output Clock PairControls timing of Q outputs; C#↑ latches first data word, C↑ latches second
R#, W#Read/Write EnableActive-low synchronous commands; both HIGH = NOP (high-Z outputs)
BW0#–BW3#Byte Write SelectFour active-low signals enabling independent 9-bit sub-word writes across 36-bit bus
D0–D35Data Inputs36-bit synchronous write data path registered on K/K# rising edges
Q0–Q35Data Outputs36-bit synchronous read data path aligned to C/C# rising edges
ZQImpedance Calibration InputConnects to external resistor to ground to tune Q/CQ/CQ# output impedance (35–70 Ω)
TCK, TMS, TDI, TDOJTAG Test PortIEEE 1149.1 compliant boundary-scan interface operating at 1.8 V I/O level

Key Features

Feature Design Value
Concurrent Read/Write PortsEnables simultaneous access to same memory array without arbitration delay
2-Word Burst OperationGuarantees 100% bus utilization per transaction-no dead cycles between consecutive bursts
User-Programmable Output Impedance35–70 Ω tuning via ZQ pin eliminates need for external series resistors on PCB
PLL-Based Clock DeskewMatches flight time between C/C# and Q outputs, reducing setup/hold margin requirements
Clock-Stop ModeEnters low-power state with <20 μs recovery; preserves data and internal state during idle periods
HSTL Class I I/OEnsures signal integrity at 200 MHz with controlled slew rate and on-die termination compatibility

Applications

High-Speed Network Packet Buffer FPGA Co-Processor Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM providing zero-wait-state, concurrent read/write access to packet buffer memory.

Use Value: 200 MHz clock + 2-word burst delivers 14.4 Gbps sustained bandwidth (36 bits × 200 MHz × 2), eliminating bottlenecks in line-rate forwarding.

Use Scenario: Offloading high-bandwidth data movement between FPGA fabric and external processors in AI inference accelerators.

IC Role / Device Role / Timing Role: Synchronous memory bridge with independent read/write ports synchronized to FPGA's dual-clock domain.

Use Value: Concurrent port operation allows FPGA to initiate a write while simultaneously reading prior results-reducing pipeline stalls by up to 40% vs. single-port SRAM.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Real-time buffering of IQ samples in 5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory supporting strict TDMA timing constraints.

Use Value: 5.0 ns cycle time and PLL-controlled CQ/CQ# echo clocks ensure ±0.35 ns output hold margin-critical for sampling accuracy at 200 MS/s.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: High-reliability, fast-cycle memory delivering repeatable timing for production wafer testing.

Use Value: Clock-stop capability reduces dynamic power by >65% during vector idle periods while maintaining data retention-extending ATE uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2663KV18-500BZXC512K × 36, 200 MHz, 165-pin BGA, but uses SSTL-2 I/O (not HSTL); no ZQ calibrationRequires external termination resistors; less suitable for impedance-critical backplane interfacesSelect when board already uses SSTL-2 infrastructure and ZQ tuning is unnecessary
AS7C33256P-50BINAsynchronous 32M-bit SRAM (512K × 64), no burst, no dual-clock, 15 ns access - lacks QDR-II timing architectureCannot support concurrent read/write or DDR-style burst; unsuitable for real-time streamingOnly consider for cost-sensitive, non-timing-critical control-plane storage where latency is secondary

Compared with CY7C2663KV18-500BZXC and AS7C33256P-50BIN, UPD44165362BF5-E50-EQ3-A uniquely combines HSTL I/O with on-die impedance tuning and true concurrent ports-enabling tighter timing closure in high-speed serial link buffers without external termination networks.

Availability

UPD44165362BF5-E50-EQ3-A is available at Aetrix Electronics and suitable for high-speed networking packet buffers, FPGA co-processor memory subsystems, and telecom baseband processing requiring stable component supply across extended production lifecycles.

Supply support for UPD44165362BF5-E50-EQ3-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD44165xxx family was designed specifically for high-bandwidth, low-latency memory interfacing in networking and communications equipment-emphasizing QDR-II timing precision, HSTL compatibility, and robust thermal performance in dense BGA packages.

FAQ

What is the maximum guaranteed clock frequency for UPD44165362BF5-E50-EQ3-A?

The UPD44165362BF5-E50-EQ3-A is rated for 200 MHz operation, corresponding to a 5.0 ns clock cycle time. This is verified across the full 0 to 70°C operating temperature range and 1.7–1.9 V VDD supply. Higher frequencies (e.g., 250 MHz or 287 MHz) require faster speed grades (E40 or E35 suffixes) and are not guaranteed for this specific part number.

Does UPD44165362BF5-E50-EQ3-A support true concurrent read and write operations?

Yes, UPD44165362BF5-E50-EQ3-A features physically independent read and write data paths, allowing simultaneous access to the memory array without arbitration delay. The block diagram on page 9 confirms separate input registers, sense amps, and output buffers for each port-enabling full-duplex operation at 200 MHz.

How is output impedance calibrated on UPD44165362BF5-E50-EQ3-A?

Output impedance is calibrated using the ZQ pin: connect an external resistor (RQ) from ZQ to ground to set Q, CQ, and CQ# driver impedance to 0.2 × RQ. Valid RQ values range from 175 Ω to 350 Ω, yielding 35–70 Ω output impedance. Calibration occurs automatically every 20 μs after power-up and tracks voltage/temperature drift.

Can UPD44165362BF5-E50-EQ3-A operate without the PLL enabled?

Yes-asserting DLL# = LOW disables the PLL, allowing operation at reduced clock frequencies (<120 MHz) for debug or low-power modes. However, AC/DC characteristics are not guaranteed in this mode, and full timing compliance requires DLL# = HIGH (tied to VDDQ via ≤10 kΩ resistor) during normal operation.

What is the purpose of the C and C# output clocks on UPD44165362BF5-E50-EQ3-A?

The C and C# output clocks provide precise, user-controllable timing references for downstream devices: C#↑ latches the first 36-bit data word, and C↑ latches the second. Their 180° phase alignment matches flight time to Q outputs, minimizing skew. If unused, tie both HIGH to revert to K/K#-synchronized output timing.

UPD44165362BF5-E50-EQ3-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD44165362BF5-E50-EQ3-A FAQ

1.How can I place an order for UPD44165362BF5-E50-EQ3-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44165362BF5-E50-EQ3-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of UPD44165362BF5-E50-EQ3-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44165362BF5-E50-EQ3-A is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44165362BF5-E50-EQ3-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44165362BF5-E50-EQ3-A?

UPD44165362BF5-E50-EQ3-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44165362BF5-E50-EQ3-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44165362BF5-E50-EQ3-A?

For technical support, including UPD44165362BF5-E50-EQ3-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44165362BF5-E50-EQ3-A requirements.

6.How does Aetrix verify that UPD44165362BF5-E50-EQ3-A is sourced from the original manufacturer or authorized distributors?

All UPD44165362BF5-E50-EQ3-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44165362BF5-E50-EQ3-A meets industry standards.

7.What is the process for return or replacement of UPD44165362BF5-E50-EQ3-A?

All UPD44165362BF5-E50-EQ3-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44165362BF5-E50-EQ3-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44165362BF5-E50-EQ3-A part is unused and in its original packaging.

Return procedure for UPD44165362BF5-E50-EQ3-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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