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Renesas UPD44165364BF5-E40-EQ3
- Part No.:
- UPD44165364BF5-E40-EQ3
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
UPD44165364BF5-E40-EQ3.pdf
- Description:
- QDR SRAM, 512KX36, 0.45NS
- Quantity:
- Payment:
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Inventory:702
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Product details
Overview
UPD44165364BF5-E40-EQ3 from Renesas Electronics is a 524,288-word × 36-bit (18-Mbit) synchronous Quad Data Rate II (QDR II) SRAM with 4-word burst operation, HSTL interface, and 1.8 V core supply. It supports concurrent read/write ports, DDR bus utilization, and operates at 250 MHz (4.0 ns cycle time) across 0°C to 70°C ambient. It is used in high-speed networking buffers and packet memory subsystems requiring deterministic latency and wide data width.
For engineers reviewing the UPD44165364BF5-E40-EQ3 datasheet, UPD44165364BF5-E40-EQ3 pinout, UPD44165364BF5-E40-EQ3 application, or UPD44165364BF5-E40-EQ3 equivalent, key selection criteria include its 36-bit x512K organization, 165-pin plastic BGA (13×15) package, HSTL I/O compatibility, DLL-enabled clock scaling, and byte-write control via BW0#–BW3# for partial writes in telecom and FPGA-attached memory systems.
Technical Context
This QDR II SRAM employs dual-clock architecture: K/K# registers address/control on rising edges, while C/C# synchronize output data delivery-enabling precise flight-time matching between clock and data. Its internal burst counter and separate read/write data paths allow true concurrent transactions without arbitration delay.
The device integrates a PLL for jitter-tolerant operation and wide data-valid windows, supports clock-stop mode with 20 μs recovery, and features user-programmable output impedance (35–70 Ω) via ZQ calibration. All I/Os comply with HSTL Class I specifications, and JTAG 1149.1 test access is provided for boundary-scan verification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 524,288 words × 36 bits = 18,874,368 bits (18 Mbit) |
| Cycle Time / Max Frequency | 4.0 ns / 250 MHz - defines minimum clock period for full-rate operation |
| Supply Voltage | VDD = 1.7–1.9 V; VDDQ = 1.4–VDD V - separates core logic and I/O power domains |
| Interface Standard | HSTL Class I - ensures signal integrity at 250 MHz with controlled-impedance outputs |
| Burst Length | 4-word fixed burst - reduces address bus frequency by 4× versus single-word access |
| Operating Temperature | 0°C to +70°C - validated for commercial-grade embedded systems |
| Package | 165-pin plastic BGA (13 mm × 15 mm) - standard footprint for high-density PCB layout |
| Write Enable | W# active-low synchronous write strobe - registered on K/K# rising edges |
Pinout & Package
UPD44165364BF5-E40-EQ3 is housed in a 165-pin plastic BGA (13 × 15 mm) with 0.8 mm ball pitch. The package supports HSTL I/O, includes dedicated echo clocks (CQ/CQ#), output clocks (C/C#), and four byte-write enables (BW0#–BW3#) for granular 9-bit sub-word writes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, K# | Input clock pair | Registers all address and control inputs on rising edge of K; K# provides second edge for data capture during writes |
| C, C# | Output clock pair | Controls timing of Q outputs: C# clocks first/third data, C clocks second/fourth - enables skew-matched data delivery |
| D0–D35 | Synchronous data inputs | 36-bit parallel input bus registered on K/K# rising edges during WRITE cycles |
| Q0–Q35 | Synchronous data outputs | 36-bit parallel output bus synchronized to C/C# rising edges during READ cycles |
| BW0#–BW3# | Byte write enable inputs | Four independent active-low signals enabling 9-bit sub-word writes (e.g., BW0# controls D0–D8) |
| R# | Read command input | Active-low signal initiating burst READ sequence; registered on K rising edge |
| W# | Write command input | Active-low signal initiating burst WRITE sequence; registered on K rising edge |
| ZQ | Impedance calibration input | Connects to external resistor to ground to set output driver impedance (35–70 Ω) for signal integrity |
| VREF | HSTL reference voltage | Nominally VDDQ/2; sets switching threshold for all HSTL inputs |
| TCK, TMS, TDI, TDO | JTAG 1149.1 interface | IEEE-compliant test access port supporting boundary-scan diagnostics and programming |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent Read/Write Ports | Independent data paths allow simultaneous read and write operations without bus contention or arbitration delay |
| 4-Word Burst Architecture | Reduces required address transition rate by 75%, lowering routing complexity and timing margin pressure |
| HSTL I/O with Programmable Impedance | On-die ZQ calibration supports 35–70 Ω output termination, eliminating need for external series resistors |
| Dual Clock Domain (K/K# + C/C#) | Decouples input registration from output timing, enabling precise flight-time matching for high-speed interconnects |
| PLL-Based Timing Engine | Widens data valid window and supports future frequency scaling up to 300 MHz without redesign |
| Byte-Write Granularity (BW0#–BW3#) | Enables selective 9-bit writes within 36-bit word, reducing unnecessary data traffic and power consumption |
Applications
| High-Speed Network Packet Buffer | FPGA-Based Protocol Accelerator |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/25G Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port QDR II SRAM serving as zero-latency shared buffer between MAC and traffic manager ASICs. Use Value: 36-bit width matches common SerDes lane groupings; 250 MHz DDR operation delivers 18 Gbps sustained bandwidth per port. | Use Scenario: Offloading TCP/IP checksum, encryption, or packet classification in reconfigurable compute platforms. IC Role / Device Role / Timing Role: High-bandwidth memory co-processor interfaced directly to FPGA fabric via HSTL I/O banks. Use Value: Concurrent read/write capability enables pipelined processing stages; burst mode minimizes FPGA address generation logic. |
| Telecom Baseband Processing | Real-Time Video Frame Store |
Use Scenario: Temporary storage of OFDM symbol data in LTE/5G baseband units prior to FFT/IFFT processing. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for symbol-aligned buffering between ADC/DAC and DSP cores. Use Value: Clock-stop mode allows dynamic power gating during idle periods; 4.0 ns cycle time meets strict symbol timing budgets. | Use Scenario: Intermediate frame storage in broadcast-grade video scalers or chroma-key compositors. IC Role / Device Role / Timing Role: Dual-port memory enabling simultaneous write (ingest) and read (output scan) of 4:2:2 YUV data streams. Use Value: 36-bit bus supports two 16-bit pixels + metadata per cycle; HSTL signaling ensures clean eye diagrams at 250 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1722KV18-250BZI | 256K × 36 organization (9-Mbit); same 250 MHz speed grade and 165-pin BGA | Lower density limits use in full-frame video or multi-lane packet buffers | Select when system requires lower capacity or cost-sensitive design with identical timing and pinout |
| AS7C331024B-250BIN | 512K × 36 organization but QDR III architecture; 300 MHz max, different AC timing and ZQ behavior | Higher speed and enhanced power management, but requires timing model validation and layout review | Select when upgrading bandwidth beyond 250 MHz is required and migration path to QDR III is acceptable |
Compared with CY7C1722KV18-250BZI and AS7C331024B-250BIN, UPD44165364BF5-E40-EQ3 delivers identical 512K×36 density and 250 MHz performance in a mature QDR II implementation, with proven interoperability in legacy telecom and networking designs where backward compatibility and long-term supply stability are critical.
Availability
UPD44165364BF5-E40-EQ3 is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based accelerators, and telecom baseband systems requiring stable component supply, long lifecycle support, and guaranteed traceable sourcing.
Supply support for UPD44165364BF5-E40-EQ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The UPD44165364BF5-E40-EQ3 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory applications in networking, telecommunications, and real-time signal processing systems.
FAQ
What is the memory organization and total capacity of UPD44165364BF5-E40-EQ3?
UPD44165364BF5-E40-EQ3 has a 524,288-word × 36-bit organization, totaling 18,874,368 bits (18 Mbit). This configuration supports high-throughput data handling in applications such as packet buffering and video frame storage, where wide data paths reduce access overhead and improve effective bandwidth utilization.
Does UPD44165364BF5-E40-EQ3 support concurrent read and write operations?
Yes, UPD44165364BF5-E40-EQ3 features physically separate read and write data ports, enabling true concurrent read and write transactions without arbitration delay. This architecture is essential for real-time systems like network switches and baseband processors where deterministic latency and continuous data flow are required.
What clocking scheme does UPD44165364BF5-E40-EQ3 use for input and output synchronization?
UPD44165364BF5-E40-EQ3 uses a dual-clock architecture: K/K# registers address and control inputs on the rising edge of K, while C/C# control output data timing. C# clocks the first and third data words, and C clocks the second and fourth-enabling precise flight-time matching between clock and data for reliable high-speed signaling.
How is output impedance controlled on UPD44165364BF5-E40-EQ3?
UPD44165364BF5-E40-EQ3 implements on-die output impedance calibration via the ZQ pin, which connects to an external resistor to ground. This adjusts Q, CQ, and CQ# driver impedance to 35–70 Ω, ensuring signal integrity without requiring external series termination resistors on the PCB.
Is UPD44165364BF5-E40-EQ3 compatible with JTAG boundary-scan testing?
Yes, UPD44165364BF5-E40-EQ3 includes a fully compliant IEEE 1149.1 JTAG test access port (TCK, TMS, TDI, TDO) operating at 1.8 V I/O levels. This enables boundary-scan verification, interconnect testing, and in-system programming support during manufacturing and field diagnostics.
UPD44165364BF5-E40-EQ3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD44165364BF5-E40-EQ3 FAQ
1.How can I place an order for UPD44165364BF5-E40-EQ3 through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD44165364BF5-E40-EQ3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD44165364BF5-E40-EQ3 reliable?
The price and inventory of UPD44165364BF5-E40-EQ3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44165364BF5-E40-EQ3 is usually 5 days.
3.What payment methods are accepted for UPD44165364BF5-E40-EQ3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44165364BF5-E40-EQ3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPD44165364BF5-E40-EQ3?
UPD44165364BF5-E40-EQ3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD44165364BF5-E40-EQ3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD44165364BF5-E40-EQ3?
For technical support, including UPD44165364BF5-E40-EQ3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44165364BF5-E40-EQ3 requirements.
6.How does Aetrix verify that UPD44165364BF5-E40-EQ3 is sourced from the original manufacturer or authorized distributors?
All UPD44165364BF5-E40-EQ3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44165364BF5-E40-EQ3 meets industry standards.
7.What is the process for return or replacement of UPD44165364BF5-E40-EQ3?
All UPD44165364BF5-E40-EQ3 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44165364BF5-E40-EQ3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD44165364BF5-E40-EQ3 part is unused and in its original packaging.
Return procedure for UPD44165364BF5-E40-EQ3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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