Renesas UPD44324182BF5-E40-FQ1

Overview

UPD44324182BF5-E40-FQ1 from Renesas Electronics is a 2,097,152-word × 18-bit synchronous double data rate (DDR II) SRAM with pipelined burst operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports two-tick burst reads/writes, and integrates PLL-based output timing control for precise flight-time matching via C/C# output clocks. It is used in high-speed networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the UPD44324182BF5-E40-FQ1 datasheet, UPD44324182BF5-E40-FQ1 pinout, UPD44324182BF5-E40-FQ1 application, or UPD44324182BF5-E40-FQ1 equivalent, this page provides verified DDR II SRAM specifications including HSTL I/O compliance, 165-pin plastic BGA package mapping, burst timing constraints, impedance-programmable outputs (35–70 Ω), and JTAG 1149.1 test port implementation.

Technical Context

This device implements a synchronous DDR architecture with dual-edge clocking on K/K# for address/control latching and data registration, plus independent C/C# output clocks for deterministic data valid window alignment. Its internal burst counter advances A0 to generate linear 2-word bursts, and the echo clocks CQ/CQ# are tightly matched to DQ outputs for reliable data capture.

The integrated PLL enables wide output data valid windows and supports future frequency scaling up to 300 MHz. Clock-stop capability allows low-power idle states with full operational recovery within 20 μs, while DLL# input disables the PLL for debug-mode operation at sub-120 MHz frequencies without guaranteed AC/DC specs.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (15 × 17 mm), lead-free, RoHS-compliant. Pin pitch: 0.8 mm. Thermal resistance θ_ja = 21.2°C/W (4-layer board, still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C2665KV18 and IS42S16160J, UPD44324182BF5-E40-FQ1 offers superior timing determinism via CQ/CQ# echo clocks, HSTL compatibility with modern FPGAs, and on-die impedance tuning - critical for high-reliability industrial and telecom designs.

Availability

UPD44324182BF5-E40-FQ1 is available at Aetrix Electronics and suitable for high-speed networking packet buffers, FPGA-based video frame stores, industrial PLC motion controllers, and automated test equipment requiring stable component supply and long-term lifecycle support.

Supply support for UPD44324182BF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD44324xxxB family was designed specifically for high-bandwidth, low-latency synchronous memory applications demanding DDR timing precision, HSTL compatibility, and robust thermal performance in compact BGA packages.

FAQ

What is the operating temperature range for UPD44324182BF5-E40-FQ1?

The UPD44324182BF5-E40-FQ1 is rated for commercial temperature operation from 0°C to +70°C. This is confirmed in the Ordering Information table (R10DS0036EJ0200 Rev.2.00, Page 2), where the suffix "FQ1" (without "Y") denotes the 0–70°C grade. The "FQ1-A" variant adds lead-free finish but maintains the same ambient temperature specification. No extended temperature version is assigned to this specific part number.

Does UPD44324182BF5-E40-FQ1 support true dual-port operation?

No, UPD44324182BF5-E40-FQ1 does not support true dual-port operation. It is a single-port synchronous DDR II SRAM with shared DQ0–DQ17 for both read and write data. Access is controlled by the R,W# input and burst sequencing logic. While it enables rapid alternating read/write bursts under controller management, it lacks independent read and write ports or simultaneous access capability - confirmed by the block diagram (Page 9) and Bus Cycle State Diagram (Page 13).

How is output impedance calibrated on UPD44324182BF5-E40-FQ1?

Output impedance on UPD44324182BF5-E40-FQ1 is calibrated via the ZQ pin, which connects to an external resistor (RQ) tied to ground. The device sets DQ, CQ, and CQ# output drive strength to 0.2 × RQ. Recommended RQ values yield 35–70 Ω output impedance. Calibration occurs automatically every 20 μs after power-up and tracks voltage/temperature drift - detailed in Pin Description (Page 8) and DC Characteristics (Page 15).

Can UPD44324182BF5-E40-FQ1 operate without using the C and C# output clocks?

Yes, UPD44324182BF5-E40-FQ1 can operate without C and C# by tying both to HIGH. In this mode, data outputs are synchronized to K and K# rising edges instead of C/C#, and echo clocks CQ/CQ# remain active. However, the tight flight-time matching benefit is lost, and timing margins rely solely on K/K# skew control - as specified in Pin Description (Page 7) and Burst Sequence (Page 11).

What JTAG voltage level does UPD44324182BF5-E40-FQ1 require?

UPD44324182BF5-E40-FQ1 requires 1.8 V I/O level for all JTAG pins (TCK, TMS, TDI, TDO), as explicitly stated in the Pin Description table (Page 8). TCK must be tied to VSS if JTAG is unused; TDO should be pulled up to VDD when externally driven. These requirements ensure compatibility with standard 1.8 V boundary-scan controllers and prevent latch-up or undefined test behavior.