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Renesas UPD44324185BF5-E33-FQ1-A

Part No.:
UPD44324185BF5-E33-FQ1-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD44324185BF5-E33-FQ1-A.pdf
Description:
DDR SRAM, 2MX18, 0.45NS
Quantity:
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Payment
Shipping:
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Inventory:1,161

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Product details

Overview

UPD44324185BF5-E33-FQ1-A from Renesas Electronics is a 2,097,152-word × 18-bit synchronous double data rate (DDR II) SRAM with HSTL interface, 1.8 V core supply, 300 MHz clock operation (3.3 ns cycle time), and 165-pin plastic BGA (15 × 17) packaging. It delivers pipelined DDR read/write bursts of two words per cycle for high-bandwidth memory buffering in network packet processors.

For engineers reviewing the UPD44324185BF5-E33-FQ1-A datasheet, UPD44324185BF5-E33-FQ1-A pinout, UPD44324185BF5-E33-FQ1-A application, or UPD44324185BF5-E33-FQ1-A equivalent, key selection criteria include DDR timing compliance (K/K# and C/C# dual-clock architecture), user-programmable output impedance (35–70 Ω via ZQ), HSTL Class I I/O compatibility, and JTAG 1149.1 test access support.

Technical Context

This device implements a fully synchronous DDR II SRAM architecture with independent read/write data ports, a burst counter, and integrated PLL for output data valid window extension. All address, control, and data inputs are registered on rising edges of K and K#, while outputs are synchronized to C and C# (or K/K# if C/C# are tied HIGH).

The memory array uses full-CMOS six-transistor cells and supports clock-stop mode with 20 μs recovery. Its HSTL I/O interface meets JEDEC Class I standards, and output impedance is calibrated via external ZQ resistor to match system bus termination.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization2,097,152 words × 18 bits (36 Mbit total)
Clock Frequency300 MHz - enables 600 MT/s data transfer rate using double data rate
Supply VoltageVDD = 1.8 ± 0.1 V - matches low-voltage system rail; VDDQ = 1.4–1.8 V for I/O buffer isolation
Interface StandardHSTL Class I - ensures signal integrity at high speed with controlled-impedance drivers
Burst Length2-word burst - minimizes transaction overhead for packetized data buffering
Package165-pin plastic BGA (15 × 17 mm) - supports high-density routing and thermal dissipation
Operating Temperature0 °C to +70 °C - qualified for commercial/industrial embedded systems

Pinout & Package

UPD44324185BF5-E33-FQ1-A is housed in a 165-pin plastic BGA package with 15 × 17 ball grid (index mark per datasheet). Pin functions are validated per R10DS0037EJ0200 Rev.2.00, Page 3.

Pin/TerminalCircuit RoleDesign Meaning
K, K#Input clock pairRegisters all synchronous inputs on rising edges; defines DDR timing reference
C, C#Output clock pairControls output data timing; enables flight-time matching between clock and data to receiver
CQ, CQ#Echo clock outputsTightly matched to Q outputs (±0.1 ns); provides data-valid indication independent of C/C# state
LD#Synchronous load inputInitiates bus cycle definition (address + R/W direction); active LOW
R, W#Read/Write controlDetermines access type during LD# assertion: HIGH = read, LOW = write
BW0#, BW1#Byte write enablesSelect 9-bit byte groups (D0–D8, D9–D17); active LOW for write masking
ZQImpedance calibration inputConnects to external resistor to ground to set Q/CQ/CQ# output impedance (35–70 Ω)
TCK, TMS, TDI, TDOJTAG 1149.1 interfaceEnables boundary-scan testing; operates at 1.8 V I/O level

Key Features

FeatureDesign Value
Pipelined DDR operationDelivers two data words per clock cycle with no pipeline stalls, enabling sustained 600 MT/s throughput
User-programmable output impedance35–70 Ω range via ZQ pin and external resistor - eliminates need for board-level series termination resistors
Separate read/write data pathsEliminates bus turnaround delay; supports concurrent read-after-write in same cycle
PLL-based output timing controlExtends data valid window and enables future frequency scaling without redesigning clock distribution
Clock-stop capabilityEnters low-power state with 20 μs recovery - supports dynamic power management in burst-oriented traffic

Applications

Network Packet BufferingHigh-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in line-rate switches.

IC Role / Device Role / Timing Role: DDR II SRAM acting as first-level packet buffer with 2-word burst reads/writes aligned to ingress/egress clock domains.

Use Value: 300 MHz DDR operation delivers 10.8 GB/s bandwidth - sufficient for 10 GbE full-duplex line-rate buffering with sub-10 ns latency.

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Synchronous memory staging data between high-speed DACs and pattern sequencers using precise C/C# output clocks.

Use Value: Echo clocks (CQ/CQ#) provide traceable data-valid timing within ±0.1 ns - critical for sub-nanosecond waveform edge alignment.

Baseband Signal ProcessingIndustrial Real-Time Control Buffer

Use Scenario: Temporary storage of FFT coefficients and filter taps in LTE/5G baseband FPGAs.

IC Role / Device Role / Timing Role: Dual-port DDR II SRAM interfacing with FPGA fabric via HSTL I/O banks, supporting simultaneous read/write with separate data buses.

Use Value: Separate DQ and Q pins eliminate contention; 18-bit width matches common DSP word sizes - reducing glue logic and PCB layers.

Use Scenario: Holding motion control command queues and sensor feedback buffers in CNC controllers.

IC Role / Device Role / Timing Role: Deterministic-latency memory buffer synchronized to real-time CPU clock (K/K#) and isolated from output timing jitter (C/C#).

Use Value: Clock-stop mode reduces standby current to 400 mA - extends uptime in fanless industrial enclosures without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C2665KV183.3 V core supply; 250 MHz max clock; 165-pin FBGA but different pinout and HSTL-II interfaceRequires level-shifting for 1.8 V systems; lacks ZQ impedance calibration and echo clocksChoose only if legacy 3.3 V infrastructure exists and echo-clock timing validation is unnecessary
IS42S32400FSDRAM (not DDR II SRAM); 32-bit × 1M organization; 166 MHz clock; 1.8 V I/O only (2.5 V core)Asynchronous refresh required; higher latency; no burst-of-2 native supportAcceptable only for cost-sensitive non-real-time buffering where deterministic timing is not required

Compared with CY7C2665KV18 and IS42S32400F, UPD44324185BF5-E33-FQ1-A uniquely combines 1.8 V core operation, 300 MHz DDR II performance, on-die impedance tuning, and echo-clock timing assurance - making it optimal for deterministic, high-throughput embedded memory subsystems.

Availability

UPD44324185BF5-E33-FQ1-A is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, baseband signal processing, and industrial real-time control buffer applications requiring stable component supply, long-term lifecycle support, and guaranteed lead-free compliance.

Supply support for UPD44324185BF5-E33-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The μPD44324xxB product line was designed specifically for high-bandwidth, low-latency DDR II SRAM applications in networking and test equipment - emphasizing synchronous timing precision, HSTL interoperability, and robust thermal performance in BGA packages.

FAQ

What is the maximum guaranteed clock frequency for UPD44324185BF5-E33-FQ1-A?

The UPD44324185BF5-E33-FQ1-A is rated for 300 MHz operation with a 3.3 ns clock cycle time, as specified in the ordering information table (R10DS0037EJ0200 Rev.2.00, Page 2). This frequency is guaranteed across the full 0 °C to +70 °C operating temperature range and requires stable K/K# input clock with ≤0.2 ns peak-to-peak phase jitter.

Does UPD44324185BF5-E33-FQ1-A support true dual-port operation with simultaneous read and write?

UPD44324185BF5-E33-FQ1-A supports separate read and write data ports (Q0–Q17 and D0–D17), but it is not a true dual-port SRAM. Read and write operations are time-multiplexed within the same clock domain using LD# and R,W# control; concurrent access to the same address is not permitted, and burst cycles are sequential.

How is output impedance calibrated on UPD44324185BF5-E33-FQ1-A?

Output impedance calibration on UPD44324185BF5-E33-FQ1-A is performed via the ZQ pin, which connects to an external resistor to ground. The device sets Q, CQ, and CQ# output impedance to 0.2 × RQ, yielding 35–70 Ω range. Calibration occurs automatically every 20 μs after power-up and adjusts for voltage/temperature drift.

Can UPD44324185BF5-E33-FQ1-A operate without the PLL enabled?

Yes - UPD44324185BF5-E33-FQ1-A can operate with the PLL disabled by asserting DLL# = LOW. In this mode, read latency reduces to 1.0 clock cycle, but AC/DC characteristics are not guaranteed, and operation is limited to frequencies below TKHKH (MAX.). For full specification compliance, DLL# must be held HIGH.

What is the function of CQ and CQ# pins on UPD44324185BF5-E33-FQ1-A?

CQ and CQ# are synchronous echo clock outputs tightly matched to Q data outputs (±0.1 ns variation). They provide a hardware-validated data-valid timing reference independent of C/C# state, enabling precise setup/hold verification at the receiving device - especially valuable in high-speed test and packet-forwarding applications.

UPD44324185BF5-E33-FQ1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD44324185BF5-E33-FQ1-A FAQ

1.How can I place an order for UPD44324185BF5-E33-FQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44324185BF5-E33-FQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44324185BF5-E33-FQ1-A reliable?

The price and inventory of UPD44324185BF5-E33-FQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44324185BF5-E33-FQ1-A is usually 5 days.

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4.How is shipping managed for UPD44324185BF5-E33-FQ1-A?

UPD44324185BF5-E33-FQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44324185BF5-E33-FQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44324185BF5-E33-FQ1-A?

For technical support, including UPD44324185BF5-E33-FQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44324185BF5-E33-FQ1-A requirements.

6.How does Aetrix verify that UPD44324185BF5-E33-FQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD44324185BF5-E33-FQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44324185BF5-E33-FQ1-A meets industry standards.

7.What is the process for return or replacement of UPD44324185BF5-E33-FQ1-A?

All UPD44324185BF5-E33-FQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD44324185BF5-E33-FQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44324185BF5-E33-FQ1-A part is unused and in its original packaging.

Return procedure for UPD44324185BF5-E33-FQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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