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Renesas UPD44324185BF5-E40-FQ1

Part No.:
UPD44324185BF5-E40-FQ1
Manufacturer:
Renesas
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixUPD44324185BF5-E40-FQ1.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:36,634

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Product details

Overview

UPD44324185BF5-E40-FQ1 from Renesas Electronics is a 2,097,152-word × 18-bit synchronous double data rate (DDR II) SRAM with HSTL interface, 1.8 V core supply, 4.0 ns clock cycle time (250 MHz), and 165-pin plastic BGA (15 × 17) packaging. It delivers pipelined DDR read/write operations per cycle for high-bandwidth buffering in network packet processors and baseband signal chains.

For engineers reviewing the UPD44324185BF5-E40-FQ1 datasheet, UPD44324185BF5-E40-FQ1 pinout, UPD44324185BF5-E40-FQ1 application, or UPD44324185BF5-E40-FQ1 equivalent, key selection considerations include its 2-word burst architecture, separate I/O ports, user-programmable output impedance (35–70 Ω), echo clock (CQ/CQ#) timing alignment, and JTAG 1149.1 test port support.

Technical Context

This DDR II SRAM uses full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter and PLL-based timing engine. All inputs-address, control, and data-are registered on the rising edges of complementary input clocks K and K#, enabling precise DDR timing at 250 MHz with 4.0 ns cycle time.

The device supports dual-clock operation: K/K# for input registration and C/C# for output timing reference, with echo clocks CQ/CQ# tightly matched to data outputs for flight-time compensation. Its separate read/write data ports and two-tick burst mode reduce transaction latency in high-throughput streaming applications.

Key Specifications

ParameterValue and Actual Design Meaning
Organization2,097,152 words × 18 bits (36 Mbit total density)
Clock frequency250 MHz - enables 500 MT/s effective data rate with DDR operation
Supply voltageVDD = 1.7–1.9 V; VDDQ = 1.4–VDD V - supports low-power 1.8 V system integration
Interface standardHSTL Class I - ensures signal integrity on high-speed parallel buses with controlled-impedance drive
Burst length2-word burst - minimizes bus occupancy per access while maintaining throughput
Output impedanceUser-programmable 35–70 Ω via ZQ pin - enables dynamic bus termination matching without external resistors
Operating temperature0 °C to +70 °C - qualified for commercial/industrial ambient environments

Pinout & Package

Package: 165-pin plastic BGA (15 × 17 mm), ball pitch 0.8 mm, lead-free finish. Pinout conforms to μPD44324185B-specific layout (not shared with x36 variant).

Pin/TerminalCircuit RoleDesign Meaning
K, K#Input clock pairRegisters all address/control/data on rising edges; defines synchronous timing domain for write/read setup/hold
C, C#Output clock pairProvides programmable timing reference for data outputs; can be tied HIGH to revert to K/K#-synchronized output
CQ, CQ#Echo clock outputsTightly matched to Q outputs (±0.1 ns); used as data-valid indication independent of C/C# state
LD#, R, W#, BW0#, BW1#Control inputsDefine burst load, read/write direction, and byte-write enable per 9-bit nibble (D0–D8 / D9–D17)
A[0:19]Address inputs20-bit synchronous address bus; expanded address pins (2A, 10A) unused in this 2M×18 configuration
D0–D17Data inputs18-bit wide write data path; registered on both K and K# rising edges during WRITE cycles
Q0–Q17Data outputs18-bit wide read data path; synchronized to C/C# or K/K# depending on LD#/R,W# command state
ZQImpedance calibration inputConnects to external resistor to ground to set output driver strength; auto-calibrates every 20 µs after power-up
DLL#PLL disablePull LOW to bypass PLL for debug at sub-250 MHz frequencies; must be HIGH for normal operation
TCK, TMS, TDI, TDOJTAG 1149.1 interface1.8 V I/O-level boundary-scan test port; TCK must tie to VSS if unused

Key Features

FeatureDesign Value
Separate read/write data portsEnables concurrent read-after-write or write-after-read without bus turnaround delay
Pipelined DDR operationDelivers one 18-bit word per clock edge (2 words/cycle), doubling bandwidth versus single-data-rate SRAM
Two-tick burst modeMinimizes address strobe overhead and simplifies controller logic for predictable 2-word transfers
Internally self-timed write controlEliminates external write-pulse timing constraints; write completion is fully managed on-die
Clock-stop capabilityEnters low-power state with outputs in high-Z; resumes full operation within 20 µs of clock restart
HSTL Class I complianceGuarantees signal integrity on 50 Ω terminated buses with fast edge rates and tight voltage thresholds

Applications

Network Packet BufferingBaseband Signal Processing

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in telecom line cards before classification or forwarding.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer between MAC layer and traffic manager ASIC, operating at 250 MHz DDR with burst-aligned data flow.

Use Value: 2-word burst and separate I/O ports eliminate bus contention during back-to-back frame handling, increasing throughput by >30% vs. legacy SRAMs.

Use Scenario: Temporary storage of IQ samples in 4G/LTE femtocell baseband processors during FFT/IFFT and channel estimation.

IC Role / Device Role / Timing Role: Dual-port-like DDR buffer interfacing with DSP cores via HSTL bus, synchronized to system clock domain using C/C# and CQ/CQ#.

Use Value: Echo clocks (CQ/CQ#) match data valid windows to PCB trace delays, reducing timing margin requirements by 150 ps per transfer.

Test Equipment Data CaptureIndustrial Motion Control

Use Scenario: Capturing high-resolution analog waveform data from multi-channel digitizers in automated test systems.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer accepting parallel 18-bit samples at 500 MT/s, decoupled from host processor via separate read/write paths.

Use Value: User-programmable output impedance (via ZQ) eliminates need for discrete termination resistors, saving PCB area and improving signal fidelity across variable trace lengths.

Use Scenario: Real-time interpolation and trajectory buffering in CNC controllers managing multi-axis servo drives.

IC Role / Device Role / Timing Role: Deterministic latency SRAM holding motion profile segments, accessed synchronously by FPGA timing engine using K/K# and LD#.

Use Value: Clock-stop capability allows dynamic power gating during idle motion phases, reducing average system power by up to 40% without interrupting real-time control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1551KV1836-Mbit DDR II SRAM, 2M×18 organization, 2.5 V core, 3.3 ns min cycle (300 MHz), 165-pin FBGAHigher voltage (2.5 V) and faster speed; not drop-in compatible due to VDD/VDDQ mismatch and different AC timingSelect when system requires 300 MHz operation and 2.5 V supply infrastructure is already in place.
AS7C33618B36-Mbit DDR II SRAM, 2M×18 organization, 1.8 V core, 4.0 ns cycle (250 MHz), 165-pin BGA, no echo clock or ZQ calibrationLacks CQ/CQ# echo clocks and ZQ impedance tuning; simplified timing but reduced board-level timing margin flexibilityChoose for cost-sensitive designs where echo clock precision and dynamic termination are not required.

Compared with CY7C1551KV18 and AS7C33618B, the UPD44324185BF5-E40-FQ1 uniquely combines 1.8 V operation, echo clock timing alignment, and programmable output impedance-enabling tighter signal integrity control in space-constrained, high-speed industrial and telecom PCB layouts.

Availability

UPD44324185BF5-E40-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and industrial motion control requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across temperature.

Supply support for UPD44324185BF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD44324xxxB family was designed specifically for high-bandwidth, low-latency DDR II buffering in telecom infrastructure and test equipment, emphasizing precise timing control, HSTL compatibility, and robust thermal performance in compact BGA packages.

FAQ

What is the maximum guaranteed clock frequency for UPD44324185BF5-E40-FQ1?

The UPD44324185BF5-E40-FQ1 is rated for a maximum clock cycle time of 4.0 ns, corresponding to a guaranteed 250 MHz operation under commercial temperature conditions (0 °C to +70 °C). This rating is validated across all AC parameters including setup/hold times, output valid/hold, and PLL lock behavior per R10DS0037EJ0200 Rev.2.00.

Does UPD44324185BF5-E40-FQ1 support JTAG boundary-scan testing?

Yes, UPD44324185BF5-E40-FQ1 implements IEEE 1149.1-compliant JTAG test access port with dedicated TCK, TMS, TDI, and TDO pins. The interface operates at 1.8 V I/O level and supports basic boundary-scan functionality; TCK must be tied to VSS if unused, per datasheet recommendations.

How does the ZQ pin function in UPD44324185BF5-E40-FQ1?

The ZQ pin in UPD44324185BF5-E40-FQ1 serves as an output impedance calibration input. When connected to a precision resistor to ground, it sets Q, CQ, and CQ# driver strength to 0.2 × RQ. Calibration occurs automatically every 20 µs after power-up and adjusts for VDDQ and temperature drift, enabling dynamic bus termination without external resistors.

Can UPD44324185BF5-E40-FQ1 operate without the PLL enabled?

Yes, UPD44324185BF5-E40-FQ1 can operate with the PLL disabled by pulling DLL# LOW, allowing sub-250 MHz clock frequencies for debug or low-power modes. However, AC/DC characteristics are not guaranteed in this mode, and read latency changes to 1.0 clock cycle; DLL# must be HIGH for production operation per specification.

What is the purpose of CQ and CQ# signals in UPD44324185BF5-E40-FQ1?

CQ and CQ# in UPD44324185BF5-E40-FQ1 are synchronous echo clock outputs tightly matched to data outputs (±0.1 ns). They provide a reliable, on-die data-valid indication referenced to the same timing domain as Q outputs, enabling precise capture at the receiving device regardless of PCB flight time variations.

UPD44324185BF5-E40-FQ1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
4ns
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

UPD44324185BF5-E40-FQ1 FAQ

1.How can I place an order for UPD44324185BF5-E40-FQ1 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44324185BF5-E40-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44324185BF5-E40-FQ1 reliable?

The price and inventory of UPD44324185BF5-E40-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44324185BF5-E40-FQ1 is usually 5 days.

3.What payment methods are accepted for UPD44324185BF5-E40-FQ1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44324185BF5-E40-FQ1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44324185BF5-E40-FQ1?

UPD44324185BF5-E40-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44324185BF5-E40-FQ1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44324185BF5-E40-FQ1?

For technical support, including UPD44324185BF5-E40-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44324185BF5-E40-FQ1 requirements.

6.How does Aetrix verify that UPD44324185BF5-E40-FQ1 is sourced from the original manufacturer or authorized distributors?

All UPD44324185BF5-E40-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44324185BF5-E40-FQ1 meets industry standards.

7.What is the process for return or replacement of UPD44324185BF5-E40-FQ1?

All UPD44324185BF5-E40-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44324185BF5-E40-FQ1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44324185BF5-E40-FQ1 part is unused and in its original packaging.

Return procedure for UPD44324185BF5-E40-FQ1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

UPD44324185BF5-E40-FQ1 Tags

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