Renesas UPD44324362BF5-E40-FQ1

Overview

UPD44324362BF5-E40-FQ1 from Renesas Electronics is a 1,048,576-word × 36-bit synchronous double data rate (DDR) SRAM with pipelined burst operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports two-tick burst reads/writes, and integrates PLL-based timing control for precise output data valid window alignment. It is used in high-speed networking packet buffers and FPGA co-processor memory subsystems requiring low-latency, wide-data-width synchronous access.

For engineers reviewing the UPD44324362BF5-E40-FQ1 datasheet, UPD44324362BF5-E40-FQ1 pinout, UPD44324362BF5-E40-FQ1 application, or UPD44324362BF5-E40-FQ1 equivalent, key selection considerations include its 1M × 36 organization, 165-pin plastic BGA (15 × 17) package, HSTL I/O compliance, user-programmable output impedance (35–70 Ω), and dual-clock architecture (K/K# input, C/C# output clocks) enabling flight-time-matched clock-and-data delivery.

Technical Context

This DDR II SRAM employs full-CMOS six-transistor memory cells and integrates synchronous peripheral logic including a burst counter, DLL/PLL circuitry for jitter-tolerant timing scaling, and echo clocks (CQ/CQ#) tightly matched to data outputs. All inputs are registered on the rising edge of K, while data outputs are synchronized to C/C# rising edges-enabling precise skew matching between clock and data paths at system level.

It implements a two-word linear burst protocol with A0 controlling internal address advancement, supports byte-write masking via four independent BW0#–BW3# signals, and features clock-stop capability with full functional recovery within 20 μs. The device uses separate VDD (1.8 V) and VDDQ (1.4–1.8 V) supplies, with HSTL Class I-compliant I/Os referenced to VREF = VDDQ/2.

Key Specifications

Pinout & Package

UPD44324362BF5-E40-FQ1 is housed in a 165-pin plastic ball grid array (BGA) package measuring 15 mm × 17 mm with 0.8 mm pitch. The package supports automated assembly and provides low-inductance grounding via 36 dedicated VSS balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SRAM applications.

Compared with CY7C2663KV18 and IS45S32800J, UPD44324362BF5-E40-FQ1 delivers superior timing control via integrated PLL and echo clocks, supports higher 250 MHz operation, and enables tighter system-level timing closure-making it optimal for new high-performance embedded and networking designs demanding deterministic DDR performance.

Availability

UPD44324362BF5-E40-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and guaranteed lead-free compliance.

Supply support for UPD44324362BF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The μPD44324xxx family was designed specifically for high-speed, low-power synchronous memory applications in networking equipment and programmable logic systems requiring DDR II SRAM with HSTL compatibility and precise timing control.

FAQ

What is the operating temperature range for UPD44324362BF5-E40-FQ1?

UPD44324362BF5-E40-FQ1 is rated for commercial temperature operation from 0°C to +70°C. This is confirmed by the "FQ1" suffix in the part number and the ordering information table on page 2 of the datasheet, which lists "Ta = 0 to 70°C" for all FQ1 variants (non-Y suffix). Industrial-grade alternatives with −40°C to +85°C range use the "FQ1-A" or "FQ1-Y" suffix.

Does UPD44324362BF5-E40-FQ1 support true DDR (double data rate) operation on its data bus?

Yes, UPD44324362BF5-E40-FQ1 performs true double data rate operation: input data is latched on both rising edges of the K and K# clock pair, and output data is delivered on both rising edges of the C and C# output clock pair. This is explicitly stated in the "Description" section (page 1) and verified in the "Burst Sequence" truth table (page 11), where data is registered and transferred across two consecutive clock edges per transaction.

How many byte-write enable signals does UPD44324362BF5-E40-FQ1 provide, and what is their function?

UPD44324362BF5-E40-FQ1 provides four byte-write enable signals: BW0#, BW1#, BW2#, and BW3#. As a 36-bit device, it supports independent write control of four 9-bit byte lanes. The "Byte Write Operation" table on page 12 confirms that asserting any combination of these active-low signals enables writing to corresponding DQ groups (e.g., BW0#=0/BW1#=1/BW2#=1/BW3#=1 writes only DQ0–DQ8), allowing partial-word updates without read-modify-write cycles.

What is the purpose of the CQ and CQ# pins on UPD44324362BF5-E40-FQ1?

The CQ and CQ# pins on UPD44324362BF5-E40-FQ1 are synchronous echo clock outputs whose rising edges are tightly matched to the corresponding DQ output data transitions. As defined in the "Pin Description" (page 7), they serve as hardware data-valid indicators-providing a reliable timing reference for the receiving device to sample output data, independent of whether C/C# clocks are actively toggling or held high. They continue running even when DQ tristates.

Can UPD44324362BF5-E40-FQ1 operate without its internal PLL enabled?

Yes, UPD44324362BF5-E40-FQ1 can operate with the PLL disabled by holding DLL# LOW, as documented on page 8 ("DLL# Input") and page 10 ("PLL Constraints"). In this mode, the device functions at reduced clock frequencies (<120 MHz), read latency changes to 1.0 clock cycle, and AC/DC characteristics are not guaranteed. For full-specification operation at 250 MHz, DLL# must be HIGH (typically tied to VDDQ).