Renesas UPD44324362BF5-E40-FQ1-A

Overview

UPD44324362BF5-E40-FQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous double data rate (DDR) static RAM with pipelined burst operation, 1.8 V core supply, HSTL I/O interface, and 165-pin plastic BGA (15 × 17 mm) packaging. It delivers 250 MHz clock frequency, 4.0 ns cycle time, and supports two-word linear burst reads/writes for high-bandwidth memory buffering in network packet processors.

For engineers reviewing the UPD44324362BF5-E40-FQ1-A datasheet, UPD44324362BF5-E40-FQ1-A pinout, UPD44324362BF5-E40-FQ1-A application, or UPD44324362BF5-E40-FQ1-A equivalent, key selection considerations include DDR II SRAM timing compliance, HSTL Class I signal integrity, 36-bit wide data path suitability for parallel bus architectures, and PLL-enabled output clock skew matching for source-synchronous interfaces.

Technical Context

This device implements a fully synchronous DDR architecture with dual input clocks (K/K#) registering address/control on K's rising edge and data on both K and K# rising edges. Its internal burst counter and pipelined read/write paths enable deterministic 2-word burst transactions without external address sequencing logic.

The integrated PLL generates tightly matched C/C# output clocks and CQ/CQ# echo clocks, supporting precise flight-time compensation and clock–data alignment at the receiver. Output impedance is programmable via ZQ pin (35–70 Ω), and DLL# allows PLL bypass for low-frequency debug operation-though AC/DC specs are not guaranteed in that mode.

Key Specifications

Pinout & Package

UPD44324362BF5-E40-FQ1-A is housed in a 165-pin plastic BGA package (15 × 17 mm grid, 0.8 mm pitch), with ball layout optimized for signal integrity, power distribution, and thermal dissipation in high-density DDR memory subsystems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C1551KV18-250BZI and IS42S32160F-6BL, UPD44324362BF5-E40-FQ1-A uniquely delivers 36-bit width, echo clocks for timing recovery, and on-die impedance tuning-making it optimal for high-reliability, source-synchronous DDR memory subsystems demanding zero-refresh operation and sub-nanosecond timing control.

Availability

UPD44324362BF5-E40-FQ1-A is available at Aetrix Electronics and suitable for network packet buffering, high-speed frame storage, and protocol accelerator cache applications requiring stable component supply, long-term lifecycle support, and guaranteed commercial-temperature performance.

Supply support for UPD44324362BF5-E40-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44324362BF5-E40-FQ1-A belongs to Renesas' DDR II SRAM product line, engineered specifically for high-bandwidth, low-latency, zero-refresh memory buffering in networking, telecom, and real-time signal processing systems.

FAQ

What is the memory organization and operating voltage of UPD44324362BF5-E40-FQ1-A?

UPD44324362BF5-E40-FQ1-A is organized as 1,048,576 words × 36 bits (36 M-bit total), operating from a 1.8 V ±0.1 V core supply (VDD) and a 1.4–1.8 V I/O supply (VDDQ). It uses HSTL Class I I/O standards with VREF = VDDQ/2, ensuring compatibility with high-speed FPGA and ASIC interfaces while maintaining signal integrity at 250 MHz.

Does UPD44324362BF5-E40-FQ1-A support burst read/write operations, and what is the burst length?

Yes, UPD44324362BF5-E40-FQ1-A supports fixed 2-word linear burst operations for both read and write cycles. Each transaction accesses two consecutive memory locations in one clock period, eliminating the need for external burst counters and guaranteeing deterministic 2.0-cycle read latency. The burst order is defined internally and requires no address incrementing by the controller.

How does the ZQ pin function in UPD44324362BF5-E40-FQ1-A, and what impedance range does it support?

The ZQ pin in UPD44324362BF5-E40-FQ1-A serves as the reference input for on-die output impedance calibration. When connected to a precision resistor (typically 240 Ω) to ground, it sets DQ, CQ, and CQ# driver impedance to 0.2 × RQ - yielding a calibrated range of 35–70 Ω. This eliminates external series termination and adapts to voltage/temperature drift, recalibrating automatically every 20 μs after power-up.

What are the roles of C/C# and CQ/CQ# clocks in UPD44324362BF5-E40-FQ1-A?

In UPD44324362BF5-E40-FQ1-A, C/C# are user-controlled output clocks used as timing references for data sampling at the receiver, enabling flight-time tuning. CQ/CQ# are echo clocks tightly aligned to DQ outputs and serve as data-valid indicators. Unlike C/C#, CQ/CQ# remain active even when DQ is tristated, supporting reliable source-synchronous timing recovery in high-speed interfaces.

Can UPD44324362BF5-E40-FQ1-A operate without its internal PLL, and what are the implications?

Yes, UPD44324362BF5-E40-FQ1-A can operate with the PLL disabled by pulling DLL# LOW, allowing clock frequencies below 120 MHz for system debug. However, AC and DC electrical characteristics-including timing parameters, output drive strength, and jitter tolerance-are not guaranteed in this mode. For production operation, DLL# must be tied HIGH to ensure full specification compliance and PLL-enabled clock skew matching.