Renesas UPD44324362BF5-E40X-FQ1-A

Overview

UPD44324362BF5-E40X-FQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous double data rate (DDR) SRAM with pipelined burst operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports two-word linear burst reads/writes, and operates across industrial temperature range (−40°C to +85°C). This device serves as high-bandwidth buffer memory in network packet processors and FPGA-based acceleration subsystems.

For engineers reviewing the UPD44324362BF5-E40X-FQ1-A datasheet, UPD44324362BF5-E40X-FQ1-A pinout, UPD44324362BF5-E40X-FQ1-A application, or UPD44324362BF5-E40X-FQ1-A equivalent, key selection considerations include DDR timing compliance, HSTL Class I output drive capability, 165-pin plastic BGA (15 × 17 mm) mechanical fit, user-programmable output impedance (35–70 Ω), and JTAG 1149.1 test port integration.

Technical Context

This DDR II SRAM employs full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter, PLL-based clock recovery, and echo clock outputs (CQ/CQ#) tightly matched to data edges. All control and address inputs are registered on the rising edge of K/K#, while data I/O is synchronized to C/C# for flight-time compensation.

The architecture supports pipelined double data rate operation with two-tick burst, internally self-timed write control, clock-stop mode (20 μs recovery), and four independent byte-write enables (BW0#–BW3#) for selective 9-bit sub-word writes. Output impedance is calibrated via ZQ pin using external resistor-to-ground.

Key Specifications

Pinout & Package

UPD44324362BF5-E40X-FQ1-A is housed in a 165-pin plastic ball grid array (BGA) package measuring 15 mm × 17 mm with 0.8 mm pitch. The package uses standard JEDEC MO-245AC footprint and supports lead-free reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SRAM applications.

Compared with CY7C2663KV18 and AS7C336000B, UPD44324362BF5-E40X-FQ1-A uniquely combines 250 MHz DDR operation, echo clock outputs for data validity, and programmable output impedance-enabling robust timing closure in high-speed industrial and networking systems without layout iteration.

Availability

UPD44324362BF5-E40X-FQ1-A is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processing memory, industrial motion controller cache, and test equipment pattern memory requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature grade (-40°C to +85°C).

Supply support for UPD44324362BF5-E40X-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44324362BF5-E40X-FQ1-A belongs to Renesas' DDR II SRAM product line, designed specifically for high-throughput, low-latency buffering in networking, test equipment, and real-time control systems demanding deterministic DDR timing and industrial reliability.

FAQ

What is the operating temperature range for UPD44324362BF5-E40X-FQ1-A?

The UPD44324362BF5-E40X-FQ1-A is rated for industrial ambient temperature operation from −40°C to +85°C. This range is confirmed in the Ordering Information table (R10DS0036EJ0200 Rev.2.00 Page 3) under the "E40Y" suffix variant, which corresponds to the "-E40X-FQ1-A" marking indicating extended temperature qualification. Thermal resistance values (θja = 20.2°C/W) are specified for this range.

Does UPD44324362BF5-E40X-FQ1-A support true DDR timing with separate read/write clocks?

No. UPD44324362BF5-E40X-FQ1-A uses a single input clock pair (K/K#) for all register sampling and a separate output clock pair (C/C#) for data timing. As stated in the Pin Description (Page 7), C/C# provide "user controlled means of tuning device output data," and if unused, must be fixed HIGH. True bidirectional DDR clocks are not implemented; instead, it uses echo clocks (CQ/CQ#) for data validity.

How is output impedance calibrated on UPD44324362BF5-E40X-FQ1-A?

Output impedance is calibrated via the ZQ pin, which connects to an external resistor (RQ) to ground. The device sets DQ, CQ, and CQ# output impedance to 0.2 × RQ. Typical RQ values of 175–350 Ω yield 35–70 Ω output drive strength. Calibration occurs every 20 μs after power-up and tracks supply/temperature drift, as detailed on Page 8 of the datasheet.

Can UPD44324362BF5-E40X-FQ1-A operate without its PLL enabled?

Yes. Pulling DLL# LOW disables the PLL, allowing operation at frequencies below the minimum PLL lock threshold (120 MHz). However, AC/DC characteristics are not guaranteed in this mode, and read latency changes to 1.0 clock cycle. For full specification compliance, DLL# must be tied HIGH (e.g., to VDDQ via ≤10 kΩ resistor), as stated on Page 8.

What burst length does UPD44324362BF5-E40X-FQ1-A support?

The UPD44324362BF5-E40X-FQ1-A supports only fixed two-word linear burst operation. This is explicitly defined in the Description (Page 1), Features (Page 1), and Burst Sequence (Page 11) sections. There is no provision for configurable burst lengths or sequential/interleaved addressing modes - the architecture is optimized for minimal transaction overhead in high-speed buffering applications.