Renesas UPD44324365BF5-E40-FQ1
- Part No.:
- UPD44324365BF5-E40-FQ1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
UPD44324365BF5-E40-FQ1.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
UPD44324365BF5-E40-FQ1 from Renesas Electronics is a 1,048,576-word × 36-bit synchronous DDR II SRAM with 4.0 ns clock cycle time (250 MHz), HSTL interface, separate read/write data ports, and 165-pin plastic BGA (15 × 17) packaging. It delivers pipelined double data rate operation for high-bandwidth buffering in network packet processors and FPGA-based protocol accelerators.
For engineers reviewing the UPD44324365BF5-E40-FQ1 datasheet, UPD44324365BF5-E40-FQ1 pinout, UPD44324365BF5-E40-FQ1 application, or UPD44324365BF5-E40-FQ1 equivalent, key selection criteria include burst-2 DDR timing compliance, user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), and JTAG 1149.1 test access for production validation.
Technical Context
This device implements a synchronous DDR architecture with dual-clock domain control: K/K# registers address/control/data on rising edges, while C/C# govern output timing with echo clocks CQ/CQ# tightly matched to data valid windows. The integrated PLL enables wide output data valid window and supports frequency scaling up to 300 MHz.
It features independent read and write data paths, two-tick burst operation, and internally self-timed write control. Byte write enable (BW0#–BW3#) allows selective 9-bit segment writes across its 36-bit data bus, and DLL# input disables the PLL for low-frequency debug operation with 1-cycle read latency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1,048,576 words × 36 bits (36 Mbit total) |
| Clock Cycle Time | 4.0 ns - supports 250 MHz system clock with guaranteed AC timing margins |
| Supply Voltage | VDD = 1.7–1.9 V, VDDQ = 1.4–VDD - dual-rail 1.8 V core / 1.5 V I/O operation |
| Interface Standard | HSTL Class I - compatible with JEDEC-compliant memory controllers and termination schemes |
| Operating Temperature | 0 °C to +70 °C - commercial-grade ambient range per ordering suffix FQ1 |
| Package | 165-pin plastic BGA (15 mm × 17 mm) - RoHS-compliant, lead-free finish |
| Output Impedance | User-programmable 35–70 Ω via ZQ pin - enables precise trace impedance matching |
Pinout & Package
UPD44324365BF5-E40-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm) with ball pitch of 0.8 mm. Pin functions are defined per top-view layout in datasheet pages 4–6, with dedicated address, data, clock, control, power, and test terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[0:18] | Synchronous Address Input | 19-bit address registered on K rising edge; supports 1M-word addressing |
| D[0:35] | Synchronous Data Input | 36-bit write data latched on K and K# rising edges during WRITE cycles |
| Q[0:35] | Synchronous Data Output | 36-bit read data aligned to C/C# rising edges (or K/K# if C/C# tied HIGH) |
| K, K# | Input Clock Pair | Differential clock inputs registering all control and data on K rising edge; 180° phase alignment required |
| C, C# | Output Clock Pair | User-controlled timing reference for output data; C# triggers first data, C triggers second data |
| CQ, CQ# | Echo Clock Output | Tightly matched to Q outputs (±0.1 ns); provides hardware-validated data valid indication |
| BW0#–BW3# | Byte Write Enable | Four active-low signals enabling independent 9-bit segment writes across 36-bit bus |
| LD#, R, W# | Load & Read/Write Control | LD# initiates bus cycle; R,W# defines direction (HIGH = READ, LOW = WRITE) |
| ZQ | Impedance Calibration Input | Connects to external resistor to ground to set Q/CQ/CQ# output impedance to 0.2×RQ |
| DLL# | PLL Disable | Active-low input disabling internal PLL for low-frequency debug (1-cycle RL mode) |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined DDR operation | Two consecutive data transfers per clock cycle with no turnaround penalty between reads/writes |
| Separate I/O architecture | Independent 36-bit read and write data buses eliminate contention and enable simultaneous access |
| Programmable output impedance | ZQ pin adjusts Q/CQ/CQ# drive strength to match PCB trace impedance (35–70 Ω), reducing signal integrity issues |
| Integrated echo clock (CQ/CQ#) | Hardware-synchronized strobes delivered with <±0.1 ns skew to Q outputs-enables deterministic capture at receiver |
| IEEE 1149.1 JTAG support | Full TAP controller (TCK/TMS/TDI/TDO) for boundary-scan testing and production diagnostics |
| Low-power clock-stop mode | Enters standby with zero current draw on clocks; resumes full operation within 20 μs of clock restart |
Applications
| Network Packet Buffering | FPGA-Based Protocol Acceleration |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed DDR II SRAM acting as line-rate buffer between MAC and switch fabric, synchronized to 250 MHz PHY clock. Use Value: 36-bit wide bus and burst-2 operation deliver 18 Gbps sustained bandwidth, eliminating bottlenecks in 10GbE+ datapaths. |
Use Scenario: Offloading TCP/IP, TLS, or video encoding tasks from host CPU using FPGA co-processing. IC Role / Device Role / Timing Role: Dual-port SRAM providing low-latency, deterministic memory for FPGA logic implementing state machines and lookup tables. Use Value: Separate read/write ports and self-timed write control enable concurrent instruction fetch and data update without arbitration delay. |
| Telecom Line Card Memory | High-Performance Test Equipment |
Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers requiring jitter-tolerant, deterministic access. IC Role / Device Role / Timing Role: Synchronous DDR II SRAM interfacing directly to framer ASICs via HSTL I/O, clocked by recovered line clock. Use Value: PLL-based clock recovery and echo clocks (CQ/CQ#) ensure sub-nanosecond timing alignment critical for OC-192+ systems. |
Use Scenario: Pattern generation and response capture in automated test equipment (ATE) for high-speed digital ICs. IC Role / Device Role / Timing Role: Programmable memory element storing stimulus vectors and expected responses, accessed at 250 MHz with precise timing control. Use Value: User-configurable output impedance and tight CQ-to-Q skew (<0.1 ns) guarantee repeatable signal edge placement at DUT pins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2663KV18 | 2M × 18 organization, 3.3 ns cycle time, same 165-pin BGA but different pinout and HSTL-II interface | Higher density per byte but narrower 18-bit bus requires depth expansion for 36-bit systems | Select when system uses 18-bit data path and requires 300 MHz operation; not pin-compatible with UPD44324365BF5-E40-FQ1 |
| AS7C3365B | 1M × 36 organization, 5.0 ns cycle time, 200 MHz max, 165-pin BGA with identical footprint but non-identical pin mapping | Lower speed grade reduces timing margin in 250 MHz designs; lacks echo clock outputs and DLL# control | Choose for cost-sensitive, lower-frequency applications where CQ/CQ# timing validation is unnecessary |
Compared with CY7C2663KV18 and AS7C3365B, UPD44324365BF5-E40-FQ1 uniquely combines 36-bit width, 250 MHz DDR performance, echo clock timing validation, and programmable impedance in a single package-making it optimal for high-integrity, high-throughput buffering where deterministic timing and signal integrity are critical.
Availability
UPD44324365BF5-E40-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, telecom line card memory, and high-performance test equipment requiring stable component supply, long-term lifecycle support, and consistent electrical performance across temperature.
Supply support for UPD44324365BF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications infrastructure.
The μPD44324xxx family was designed specifically for high-speed, low-latency DDR II SRAM applications in networking and telecom equipment where precise timing, signal integrity, and burst-mode efficiency are essential.
FAQ
What is the maximum operating frequency supported by UPD44324365BF5-E40-FQ1?
UPD44324365BF5-E40-FQ1 supports a maximum clock frequency of 250 MHz, corresponding to its 4.0 ns clock cycle time rating. This is validated across the full commercial temperature range (0 °C to +70 °C) and includes guaranteed setup/hold timing margins for all control and data signals under HSTL Class I loading conditions.
Does UPD44324365BF5-E40-FQ1 support true dual-port operation?
UPD44324365BF5-E40-FQ1 does not support simultaneous independent read and write operations on the same address. It implements separate read and write data buses (Q[0:35] and D[0:35]) with pipelined DDR timing, enabling high-efficiency burst-2 transfers-but read and write cycles are controlled by LD# and R,W# and occur sequentially per bus cycle.
How is output impedance calibrated on UPD44324365BF5-E40-FQ1?
Output impedance calibration on UPD44324365BF5-E40-FQ1 is performed via the ZQ pin, which connects to an external resistor (RQ) to ground. The device sets Q, CQ, and CQ# output impedance to 0.2 × RQ, supporting 35–70 Ω adjustment. Calibration occurs automatically every 20 μs after power-up and tracks voltage/temperature drift.
Can UPD44324365BF5-E40-FQ1 operate without the PLL enabled?
Yes - UPD44324365BF5-E40-FQ1 can operate with the PLL disabled by asserting DLL# LOW. In this mode, read latency reduces to 1.0 clock cycle and operation is supported down to 120 MHz, though AC/DC characteristics are not guaranteed per datasheet specifications.
What is the purpose of CQ and CQ# pins on UPD44324365BF5-E40-FQ1?
CQ and CQ# are echo clock outputs tightly matched to Q[0:35] data transitions (±0.1 ns skew). They provide hardware-validated timing references for the receiving device to sample output data, eliminating reliance on board-level clock routing accuracy and simplifying high-speed interface design.
UPD44324365BF5-E40-FQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- 4ns
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
UPD44324365BF5-E40-FQ1 FAQ
1.How can I place an order for UPD44324365BF5-E40-FQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD44324365BF5-E40-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD44324365BF5-E40-FQ1 reliable?
The price and inventory of UPD44324365BF5-E40-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44324365BF5-E40-FQ1 is usually 5 days.
3.What payment methods are accepted for UPD44324365BF5-E40-FQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44324365BF5-E40-FQ1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPD44324365BF5-E40-FQ1?
UPD44324365BF5-E40-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD44324365BF5-E40-FQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD44324365BF5-E40-FQ1?
For technical support, including UPD44324365BF5-E40-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44324365BF5-E40-FQ1 requirements.
6.How does Aetrix verify that UPD44324365BF5-E40-FQ1 is sourced from the original manufacturer or authorized distributors?
All UPD44324365BF5-E40-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44324365BF5-E40-FQ1 meets industry standards.
7.What is the process for return or replacement of UPD44324365BF5-E40-FQ1?
All UPD44324365BF5-E40-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44324365BF5-E40-FQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD44324365BF5-E40-FQ1 part is unused and in its original packaging.
Return procedure for UPD44324365BF5-E40-FQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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