Renesas UPD44325084BF5-E33-FQ1

Overview

UPD44325084BF5-E33-FQ1 from Renesas Electronics is a 4,194,304-word × 8-bit synchronous Quad Data Rate II (QDR II) SRAM with 3.3 ns clock cycle time, 300 MHz operation, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) packaging. It delivers concurrent read/write ports and four-word burst for high-bandwidth networking buffer applications.

For engineers reviewing the UPD44325084BF5-E33-FQ1 datasheet, UPD44325084BF5-E33-FQ1 pinout, UPD44325084BF5-E33-FQ1 application, or UPD44325084BF5-E33-FQ1 equivalent, key selection criteria include DDR timing compliance, HSTL-1 I/O compatibility, burst-addressing behavior, PLL-enabled output data valid window, and impedance-programmable outputs for signal integrity tuning.

Technical Context

The UPD44325084BF5-E33-FQ1 implements a dual-clock architecture with K/K# for input registration and C/C# for output timing control, enabling precise flight-time matching between clock and data. Its internal PLL supports wide output data valid windows and frequency scaling up to 300 MHz.

It features separate read and write data paths with concurrent transaction capability, internally self-timed write control, and clock-stop recovery in ≤20 μs. Burst addressing is fixed at four words per transaction, with address incrementing automatically across consecutive K/K# rising edges.

Key Specifications

Pinout & Package

UPD44325084BF5-E33-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm, 0.8 mm pitch), with balls arranged in a grid indexed A–R (11 columns) and 1–11 (11 rows). Power, ground, reference, and JTAG pins follow JEDEC-standard placement for thermal and signal integrity optimization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-333BZC and AS7C33256PFSIG-333BIN, UPD44325084BF5-E33-FQ1 offers identical 4M × 8 organization and pin-compatible footprint but lacks QDR II+ enhancements and has narrower PLL lock range-making it optimal for cost-sensitive, volume-deployed systems operating strictly within 300 MHz spec.

Availability

UPD44325084BF5-E33-FQ1 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card memory, baseband processing memory, and test equipment pattern memory requiring stable component supply across production lifecycles.

Supply support for UPD44325084BF5-E33-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power management, and high-performance memory solutions for automotive, industrial, and communications markets.

The UPD44325084BF5-E33-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write throughput and precise timing control are critical.

FAQ

What is the maximum guaranteed clock frequency for UPD44325084BF5-E33-FQ1?

The UPD44325084BF5-E33-FQ1 is rated for 300 MHz operation with a 3.3 ns clock cycle time. This specification is guaranteed across the full commercial temperature range (0 °C to +70 °C) and 1.8 V ± 0.1 V supply, provided all setup/hold timing constraints and power sequencing requirements are met per the R10DS0039EJ0200 datasheet.

Does UPD44325084BF5-E33-FQ1 support true concurrent read and write operations?

Yes, UPD44325084BF5-E33-FQ1 supports true concurrent read and write operations using physically separate data paths. The device can execute a READ cycle on one address and a WRITE cycle on another address simultaneously-provided they are initiated on separate clock edges and do not conflict in arbitration, as confirmed in the Bus Cycle State Diagram (Page 16) and Truth Table (Page 13) of the UPD44325084BF5-E33-FQ1 datasheet.

How is output impedance calibrated on UPD44325084BF5-E33-FQ1?

Output impedance on UPD44325084BF5-E33-FQ1 is calibrated via the ZQ pin, which connects to an external resistor (RQ) to ground. The device sets Q, CQ, and CQ# output impedance to 0.2 × RQ, supporting 35–70 Ω tuning. Calibration occurs automatically every 20 μs after power-up and tracks supply and temperature drift, as specified in the Pin Description section (Page 9) of the UPD44325084BF5-E33-FQ1 datasheet.

Can UPD44325084BF5-E33-FQ1 operate without its PLL enabled?

Yes-UPD44325084BF5-E33-FQ1 can operate with the PLL disabled by pulling DLL# LOW. However, this mode is intended only for debug or low-frequency evaluation; AC electrical characteristics (including timing parameters and jitter tolerance) are not guaranteed, and operation below 120 MHz is unsupported. For production use, DLL# must be tied HIGH (e.g., to VDDQ via ≤10 kΩ), as stated in the Pin Description (Page 9) and PLL Constraints (Page 12) of the UPD44325084BF5-E33-FQ1 datasheet.

What is the function of CQ and CQ# pins on UPD44325084BF5-E33-FQ1?

The CQ and CQ# pins on UPD44325084BF5-E33-FQ1 are synchronous echo clock outputs that track the timing of Q0–Q7 data outputs with minimal skew. They provide a hardware data-valid indication for receiving logic and remain active even when Q outputs are tristated. Their rising edges align precisely with corresponding data transitions, enabling robust source-synchronous capture in high-speed interfaces, as detailed in the Pin Description (Page 9) and Block Diagram (Page 10) of the UPD44325084BF5-E33-FQ1 datasheet.