Renesas UPD44325092BF5-E40-FQ1

Overview

UPD44325092BF5-E40-FQ1 from Renesas Electronics is a 4,194,304-word × 9-bit (36 Mbit) synchronous Quad Data Rate II (QDR-II) SRAM with HSTL interface, 1.8 V core supply, 4.0 ns clock cycle time (250 MHz), and 165-pin plastic BGA package. It delivers concurrent read/write operations, burst-2 data transfers, and PLL-based output timing control for high-bandwidth memory subsystems in network packet buffers and baseband processors.

For engineers reviewing the UPD44325092BF5-E40-FQ1 datasheet, UPD44325092BF5-E40-FQ1 pinout, UPD44325092BF5-E40-FQ1 application, or UPD44325092BF5-E40-FQ1 equivalent, key selection considerations include its QDR-II dual-port architecture, HSTL I/O compliance, 250 MHz operation at 1.8 V, user-programmable output impedance (35–70 Ω), and JTAG 1149.1 test access support.

Technical Context

The UPD44325092BF5-E40-FQ1 implements a true dual-port synchronous SRAM architecture with independent read and write data paths, enabling simultaneous read and write transactions on the same clock cycle. Its internal burst counter and edge-triggered input registers synchronize all address, control, and data inputs to the rising edges of complementary K/K# clocks.

Output timing is precisely controlled via dedicated C/C# output clocks - delivering first data on C# rising edge and second on C rising edge - or optionally referenced to K/K# when C/C# are held high. The integrated PLL ensures wide data valid windows and supports future frequency scaling while maintaining tight skew matching between echo clocks (CQ/CQ#) and output data.

Key Specifications

Pinout & Package

UPD44325092BF5-E40-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm) with standard ball pitch and index mark per Renesas package drawing. Pin functions are validated per datasheet Page 4 (μPD44325092B pin arrangement) and confirmed for this exact ordering variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with CY7C2663KV18-400BZI and AS7C33618B-400BIN, the UPD44325092BF5-E40-FQ1 offers optimized 9-bit width and guaranteed 250 MHz operation with Renesas-specific HSTL drive characteristics, making it ideal for cost-sensitive, narrow-bus telecom buffer applications where pin count and power efficiency are prioritized over maximum bandwidth.

Availability

UPD44325092BF5-E40-FQ1 is available at Aetrix Electronics and suitable for network packet buffering, baseband processor caching, and telecom switch fabric interfaces requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for UPD44325092BF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44325092BF5-E40-FQ1 belongs to Renesas' QDR-II SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking and wireless infrastructure equipment.

FAQ

What is the operating temperature range for UPD44325092BF5-E40-FQ1?

The UPD44325092BF5-E40-FQ1 is rated for commercial temperature operation from 0°C to +70°C, as specified in the ordering information table (E** series). It does not support extended industrial range (−40°C to +85°C), which is designated by the "Y" suffix (e.g., E40Y). This makes UPD44325092BF5-E40-FQ1 appropriate for controlled-environment telecom chassis and enterprise networking gear.

Does UPD44325092BF5-E40-FQ1 support true concurrent read and write operations?

Yes, UPD44325092BF5-E40-FQ1 implements a true dual-port architecture with physically separate read and write data paths. It allows simultaneous initiation of a read cycle (R# low) and write cycle (W# low) on the same clock edge, enabling full-duplex memory access without arbitration delay - a core requirement for QDR-II compliance and verified in the device's bus cycle state diagram.

How is output impedance calibrated on UPD44325092BF5-E40-FQ1?

Output impedance on UPD44325092BF5-E40-FQ1 is calibrated using the ZQ pin: connecting an external resistor RQ from ZQ to ground sets driver impedance to 0.2 × RQ. Typical values yield 35–70 Ω outputs. Calibration occurs automatically every 20 μs after power-up and tracks supply/temperature drift - no software command or external controller is required for UPD44325092BF5-E40-FQ1 impedance tuning.

Can UPD44325092BF5-E40-FQ1 operate without the PLL enabled?

Yes, UPD44325092BF5-E40-FQ1 can operate with the PLL disabled by asserting DLL# low, allowing functional verification at reduced clock frequencies below the minimum PLL lock threshold (120 MHz). However, AC/DC electrical characteristics are not guaranteed in this mode, and full timing compliance - including CQ/CQ# skew and data valid windows - requires DLL# = HIGH and stable clock input for ≥20 μs to achieve PLL lock.

What is the role of C and C# pins on UPD44325092BF5-E40-FQ1?

The C and C# pins on UPD44325092BF5-E40-FQ1 serve as user-controlled output clocks that define data timing: the first burst word is synchronized to C#↑ and the second to C↑. When C and C# are tied HIGH, outputs default to K/K# timing. This dual-clock scheme enables precise flight-time compensation and eliminates skew between clock and data at the receiver - a critical feature for UPD44325092BF5-E40-FQ1 in high-speed backplane applications.