Renesas UPD44325182BF5-E40-FQ1

Overview

UPD44325182BF5-E40-FQ1 from Renesas Electronics is a 2,097,152-word × 18-bit synchronous quad data rate (QDR II) SRAM with 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17 mm) package. It supports concurrent read/write operations, burst-2 transfers, and clock-stop mode for low-power idle states - deployed in high-speed packet buffering for network switches and FPGA-based protocol accelerators.

For engineers reviewing the UPD44325182BF5-E40-FQ1 datasheet, UPD44325182BF5-E40-FQ1 pinout, UPD44325182BF5-E40-FQ1 application, or UPD44325182BF5-E40-FQ1 equivalent, key selection criteria include its dual-port DDR timing architecture, user-programmable output impedance (35–70 Ω), JTAG 1149.1 test access, and guaranteed 20 μs PLL lock after clock resumption.

Technical Context

This QDR II SRAM uses full-CMOS six-transistor memory cells and integrates a PLL for jitter-tolerant output timing, with separate K/K# input clocks for address/control registration and C/C# output clocks for precise data delivery. Its burst-2 operation delivers two words per transaction with 100% bus utilization on both read and write cycles.

The device implements independent read and write data ports, enabling simultaneous access without arbitration delay. Internally self-timed write control eliminates external write pulse generation, while clock-stop capability suspends all internal activity except PLL reset - restoring full operation within 20 μs of clock resumption.

Key Specifications

Pinout & Package

UPD44325182BF5-E40-FQ1 is housed in a 165-pin plastic BGA (15 × 17 mm, 1.0 mm pitch) with standard ball grid layout optimized for signal integrity and thermal dissipation in high-speed memory subsystems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18 and AS7C33256P, UPD44325182BF5-E40-FQ1 delivers optimal balance of 250 MHz performance, HSTL signal integrity, and JTAG debug support in a drop-in-compatible 165-pin BGA footprint - making it ideal for new designs targeting telecom and networking infrastructure.

Availability

UPD44325182BF5-E40-FQ1 is available at Aetrix Electronics and suitable for network switch buffering, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for UPD44325182BF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44325182BF5-E40-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking equipment, base stations, and test instrumentation where deterministic DDR timing and concurrent access are critical.

FAQ

What is the maximum guaranteed clock frequency for UPD44325182BF5-E40-FQ1?

The UPD44325182BF5-E40-FQ1 is rated for 250 MHz operation, corresponding to a 4.0 ns clock cycle time. This specification is guaranteed across the full commercial temperature range (0 to 70°C) and includes all AC timing parameters such as TAVKH, TKHAX, and TCHQV. The device supports lower frequencies down to 120 MHz when DLL# is asserted, but AC characteristics are not guaranteed below 250 MHz unless explicitly validated per application.

Does UPD44325182BF5-E40-FQ1 support true concurrent read and write operations?

Yes, UPD44325182BF5-E40-FQ1 implements physically independent read and write data paths, allowing simultaneous access to the memory array without arbitration delay. The block diagram confirms separate address registries, data registries, and output buffers for each port. This enables real-time applications like network packet buffering where ingress data is written while egress data is read in the same clock cycle.

How is output impedance calibrated on UPD44325182BF5-E40-FQ1?

Output impedance calibration on UPD44325182BF5-E40-FQ1 is performed via the ZQ pin, which connects to an external resistor (175–350 Ω) to ground. The internal circuitry sets Q, CQ, and CQ# output impedance to 0.2×RQ. Calibration occurs automatically every 20 μs after power-up and tracks voltage/temperature drift. Direct connection of ZQ to VDDQ minimizes impedance; grounding or leaving ZQ floating is prohibited.

Can UPD44325182BF5-E40-FQ1 operate without using the C and C# output clocks?

Yes, UPD44325182BF5-E40-FQ1 can operate with C and C# fixed HIGH, causing data outputs to align with K and K# rising edges instead of C/C#. However, this mode sacrifices the flight-time matching benefit of echo clocks and reduces timing margin. The datasheet mandates that C and C# be fixed HIGH - not left floating - to ensure guaranteed operation when bypassing the output clock path.

What JTAG functionality does UPD44325182BF5-E40-FQ1 provide?

UPD44325182BF5-E40-FQ1 implements IEEE 1149.1 JTAG test access with TCK, TMS, TDI, and TDO pins operating at 1.8 V I/O level. These signals support boundary-scan testing and device identification. If JTAG is unused, TCK must be tied to VSS; TMS and TDI may be left unconnected. TDO should be pulled up to VDD when externally driven. No internal JTAG instruction set beyond standard BYPASS and SAMPLE/PRELOAD is documented for this SRAM.