Renesas UPD44325182BF5-E40-FQ1-A

Overview

UPD44325182BF5-E40-FQ1-A from Renesas Electronics is a 2,097,152-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) package. It supports concurrent read/write operations, burst-2 DDR transactions, and is used in high-bandwidth networking buffers and packet forwarding engines.

For engineers reviewing the UPD44325182BF5-E40-FQ1-A datasheet, UPD44325182BF5-E40-FQ1-A pinout, UPD44325182BF5-E40-FQ1-A application, or UPD44325182BF5-E40-FQ1-A equivalent, key selection considerations include its 2M × 18 organization, 250 MHz QDR II timing, HSTL I/O compliance, PLL-enabled output clock alignment, and user-programmable output impedance (35–70 Ω).

Technical Context

This device implements a dual-port synchronous architecture with independent read and write data paths, enabling true concurrent access without arbitration overhead. Its burst-2 operation delivers two words per clock cycle on both ports, achieving 100% bus utilization under DDR timing.

The internal PLL synchronizes C/C# output clocks to K/K# inputs for precise flight-time matching, while DLL# allows PLL bypass during debug. Echo clocks CQ/CQ# provide tightly matched data-valid timing references, and ZQ enables dynamic output impedance calibration against system trace impedance.

Key Specifications

Pinout & Package

165-pin plastic BGA (15 × 17 mm) with 0.8 mm pitch; top-side index mark per JEDEC MO-270. Package includes dedicated HSTL-compatible power (VDD, VDDQ), ground (VSS), reference (VREF), and impedance calibration (ZQ) pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-400BAXI and AS7C3256A-15JIN, UPD44325182BF5-E40-FQ1-A offers optimal balance of 250 MHz performance, industrial temperature support, and flexible 1.4–1.8 V VDDQ operation - making it suitable for new designs requiring reliable QDR II functionality without over-spec'ing speed or sacrificing voltage margin.

Availability

UPD44325182BF5-E40-FQ1-A is available at Aetrix Electronics and suitable for network packet buffering, high-speed test instrumentation, baseband processing, industrial PLC data exchange, and deterministic real-time control applications requiring stable component supply and long-term lifecycle support.

Supply support for UPD44325182BF5-E40-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD44325182BF5-E40-FQ1-A belongs to Renesas' QDR II SRAM product line, designed specifically for high-throughput, low-latency buffering in networking, telecommunications, and test equipment where concurrent dual-port access and precise DDR timing are critical.

FAQ

What is the maximum operating frequency of the UPD44325182BF5-E40-FQ1-A?

The UPD44325182BF5-E40-FQ1-A is rated for 250 MHz operation, corresponding to a 4.0 ns clock cycle time. This specification is guaranteed across the full 0 °C to +70 °C ambient temperature range and includes timing margins for setup/hold, clock jitter, and output validity. The device achieves this using an internal PLL that locks to the K/K# input clock and generates aligned C/C# output clocks.

Does the UPD44325182BF5-E40-FQ1-A support byte-level write masking?

Yes, the UPD44325182BF5-E40-FQ1-A supports byte-level write masking via two dedicated inputs: BW0# and BW1#. These active-low signals enable selective writing of D0–D8 (BW0# low) or D9–D17 (BW1# low) during each burst-2 write cycle. Both signals must be high to inhibit all writes. This feature allows efficient partial-word updates without read-modify-write overhead.

How does the ZQ pin function on the UPD44325182BF5-E40-FQ1-A?

The ZQ pin on the UPD44325182BF5-E40-FQ1-A serves as the output impedance calibration input. When connected to a precision resistor (typically 200 Ω) to ground, it configures the drive strength of Q, CQ, and CQ# outputs to 0.2 × RQ - yielding a calibrated range of 35–70 Ω. This eliminates external series termination and adapts dynamically every 20 μs to compensate for voltage and temperature drift.

Can the UPD44325182BF5-E40-FQ1-A operate without its internal PLL?

Yes, the UPD44325182BF5-E40-FQ1-A can operate without the internal PLL by asserting DLL# low. In this mode, the device uses K/K# directly as output timing references instead of C/C#, bypassing the PLL lock requirement. However, AC electrical characteristics including timing parameters and jitter tolerance are not guaranteed in PLL-bypass mode - it is intended only for debug or low-frequency validation.

What is the purpose of the CQ and CQ# pins on the UPD44325182BF5-E40-FQ1-A?

The CQ and CQ# pins on the UPD44325182BF5-E40-FQ1-A are synchronous echo clocks that track Q0–Q17 output data edges with tight skew (<0.35 ns). They remain active even when Q outputs are tristated and provide hardware-verified data-valid timing references for receiving logic - eliminating reliance on clock-to-output delay calculations and simplifying timing closure in high-speed interfaces.