Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas UPD44325184BF5-E33-FQ1

Part No.:
UPD44325184BF5-E33-FQ1
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD44325184BF5-E33-FQ1.pdf
Description:
QDR SRAM, 2MX18, 0.45NS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:23,687

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

UPD44325184BF5-E33-FQ1 from Renesas Electronics is a 2,097,152-word × 18-bit synchronous quad data rate (QDR II) SRAM with 3.3 ns clock cycle time (300 MHz), 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) package. It supports concurrent read/write operations, four-word burst, and PLL-based output timing for high-speed networking buffer applications.

For engineers reviewing the UPD44325184BF5-E33-FQ1 datasheet, UPD44325184BF5-E33-FQ1 pinout, UPD44325184BF5-E33-FQ1 application, or UPD44325184BF5-E33-FQ1 equivalent, key selection criteria include QDR II burst timing compliance, HSTL-1 I/O compatibility, 18-bit wide data path, 300 MHz operation under 0–70°C ambient, and impedance-programmable outputs via ZQ pin.

Technical Context

This QDR II SRAM uses dual-clock architecture: K/K# registers address/control on rising edges and latches input data across both K and K# edges, while C/C# control output timing with precise flight-time matching. Its internal burst counter and separate read/write data ports enable true concurrent transactions without arbitration delay.

The device integrates a PLL for jitter-tolerant output data valid window extension and supports clock-stop mode with 20 μs recovery. User-programmable output impedance (35–70 Ω) via external ZQ resistor enables dynamic bus termination matching to system trace impedance.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization2,097,152 words × 18 bits = 36 Mbit total density; supports 18-bit parallel data path for high-throughput packet buffering.
Clock Cycle Time3.3 ns (300 MHz); defines minimum clock period for full-speed operation in high-bandwidth switch fabric interfaces.
Supply VoltageVDD = 1.7–1.9 V; VDDQ = 1.4–VDD V; strict 1.8 V nominal core ensures low-power, noise-immune operation in dense PCB layouts.
I/O InterfaceHSTL Class I compliant; matches JEDEC JESD8-6; enables direct interfacing with FPGA/ASIC memory controllers without level-shifting.
Burst OperationFixed 4-word burst per transaction; reduces address bus frequency by 4×, simplifying controller design and minimizing routing congestion.
Operating Temperature0°C to +70°C ambient; validated for commercial-grade telecom and industrial embedded systems with stable thermal profiles.
Package165-pin plastic BGA (15 × 17 mm); RoHS-compliant lead-free construction with standard 0.8 mm ball pitch for manufacturable assembly.

Pinout & Package

165-pin plastic BGA (15 × 17 mm), 0.8 mm ball pitch, RoHS-compliant lead-free construction. Pin mapping follows μPD44325184B-specific top-view arrangement with dedicated address, data, control, clock, and power balls.

Pin/TerminalCircuit RoleDesign Meaning
A[0:18]Synchronous Address Input19-bit registered address bus; latched on rising edge of K; enables 2M-word addressing with internal LSBs for burst sequencing.
D[0:17]Synchronous Data Input18-bit write data path; registered on rising edges of both K and K#; supports byte-write via BW0#/BW1# for partial-word updates.
Q[0:17]Synchronous Data Output18-bit read data path; synchronized to C/C# rising edges (or K/K# if C/C# tied HIGH); delivers burst data with echo clock alignment.
K, K#Input Clock PairDifferential input clock; registers all control and address inputs on K rising edge; K# phase-aligned for dual-edge data capture.
C, C#Output Clock PairUser-controlled timing reference; C# clocks first/third output words, C clocks second/fourth; enables flight-time skew compensation.
R#, W#Read/Write CommandActive-low synchronous commands; initiate burst read or write on next K rising edge; mutually exclusive per cycle (read takes precedence).
BW0#, BW1#Byte Write SelectActive-low controls 9-bit byte segments; BW0#=LOW writes D[0:8], BW1#=LOW writes D[9:17]; both LOW enables full 18-bit write.
ZQImpedance Calibration InputConnects to external resistor to ground; sets Q/CQ/CQ# output impedance to 0.2 × RQ; supports 35–70 Ω tuning for signal integrity.
VDD, VDDQ, VSSPower SuppliesVDD = 1.8 V core; VDDQ = isolated 1.5 V (or 1.8 V) I/O supply; VSS = common ground; decoupling required per JEDEC guidelines.
CQ, CQ#Echo Clock OutputOutput-synchronized clocks tightly matched to Q data edges; used as data-valid strobes at receiving end; continue running during tristate.

Key Features

FeatureDesign Value
Concurrent Read/Write PortsIndependent 18-bit read and write data paths enable simultaneous access-critical for full-duplex packet buffering in network processors.
PLL-Based Output TimingIntegrated PLL widens data valid window and supports future frequency scaling up to 300 MHz without external timing margining.
Four-Tick Burst ArchitectureFixed 4-word burst reduces effective address bus frequency by 75%, lowering controller complexity and PCB routing density.
User-Programmable Output ImpedanceZQ pin allows real-time 35–70 Ω output driver tuning to match PCB trace impedance-eliminates need for external series resistors.
IEEE 1149.1 JTAG SupportFull boundary-scan test access (TMS, TDI, TCK, TDO) enables production testability and debug visibility in high-density systems.

Applications

High-Speed Network Switch BufferTelecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches with line-rate forwarding.

IC Role / Device Role / Timing Role: Dual-port QDR II SRAM serving as shared buffer between ingress parser and egress scheduler; operates at 300 MHz with zero wait-state latency.

Use Value: Concurrent read/write eliminates arbitration stalls, enabling sustained 6 Gbps (18-bit × 300 MHz) throughput per port for non-blocking fabric designs.

Use Scenario: Buffering ATM or IP cells in carrier-grade DSLAMs and OLT line cards requiring deterministic latency and burst resilience.

IC Role / Device Role / Timing Role: High-density 36 Mbit memory providing deep FIFO storage for traffic shaping and QoS queuing engines.

Use Value: 4-word burst and HSTL interface ensure sub-ns timing margins against FPGA memory controllers, reducing jitter-induced cell loss.

Baseband Processor L2 CacheIndustrial Real-Time Control FIFO

Use Scenario: Off-chip L2 cache extension for multicore baseband processors in 4G/LTE femtocells handling real-time channel decoding.

IC Role / Device Role / Timing Role: Low-latency, high-bandwidth memory co-located with processor die; accessed via dedicated AXI/QDR bridge logic.

Use Value: 3.3 ns cycle time and clock-stop capability support burst-mode processing with 20 μs wake-up-enabling aggressive power gating.

Use Scenario: Deterministic data staging between motion controller ASIC and servo drive interface in CNC machines.

IC Role / Device Role / Timing Role: Synchronous FIFO buffer ensuring jitter-free transfer of position setpoints and encoder feedback at 10 kHz update rates.

Use Value: Separate read/write ports and HSTL signaling guarantee <1 ns skew between command and data paths-meeting IEC 61800-3 EMC requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C2663KV182M × 18, 300 MHz, 1.8 V, 165-ball BGA; Cypress (now Infineon) QDR II+ variant with enhanced DLL and lower IDD.Supports QDR II+ features including programmable burst length and extended temperature range (−40°C to +85°C).Preferred for new designs requiring extended temp range or tighter AC timing specs; requires minor layout review due to different pinout.
AS7C33618B2M × 18, 250 MHz, 1.8 V, 165-ball BGA; Alliance Memory QDR II drop-in replacement with identical pinout and timing.Limited to 4.0 ns cycle time (250 MHz); no clock-stop or ZQ calibration; simpler feature set.Cost-optimized alternative for non-critical 250 MHz applications where full QDR II feature set is unused.

Compared with UPD44325184BF5-E33-FQ1, CY7C2663KV18 offers higher reliability margins and extended temperature support but requires firmware adaptation for QDR II+ modes, while AS7C33618B provides pin-compatible cost reduction at the expense of 17% bandwidth and missing impedance tuning.

Availability

UPD44325184BF5-E33-FQ1 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and industrial real-time control FIFOs requiring stable component supply across multi-year production cycles.

Supply support for UPD44325184BF5-E33-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD44325xxx family targets high-performance packet buffering in networking and telecom equipment, delivering QDR II architecture optimized for deterministic latency, concurrent access, and HSTL interoperability with FPGA-based controllers.

FAQ

What is the maximum guaranteed clock frequency for UPD44325184BF5-E33-FQ1?

The UPD44325184BF5-E33-FQ1 is rated for 300 MHz operation with a 3.3 ns clock cycle time, validated across 0°C to +70°C ambient temperature and 1.7–1.9 V VDD supply. This frequency is guaranteed per the R10DS0039EJ0200 datasheet Rev.2.00 timing specifications under standard HSTL loading conditions.

Does UPD44325184BF5-E33-FQ1 support independent read and write operations simultaneously?

Yes, UPD44325184BF5-E33-FQ1 implements true concurrent read and write ports with separate 18-bit data paths. The device allows overlapping read and write bursts without arbitration delay, provided R# and W# are not asserted on the same K clock edge-read commands take precedence when both are active.

How is output impedance calibrated on UPD44325184BF5-E33-FQ1?

UPD44325184BF5-E33-FQ1 uses the ZQ pin to calibrate output driver impedance. A precision resistor (RQ) is connected from ZQ to ground, setting Q, CQ, and CQ# output impedance to 0.2 × RQ. Supported range is 35–70 Ω, corresponding to RQ = 175–350 Ω, with automatic recalibration every 20 μs after power-up.

What is the function of the C and C# pins on UPD44325184BF5-E33-FQ1?

The C and C# pins on UPD44325184BF5-E33-FQ1 serve as user-controlled output clocks. C# times the first and third words of a 4-word burst, while C times the second and fourth. They enable precise flight-time matching between clock and data at the receiver, and must be held HIGH if K/K# are used instead for output timing.

Can UPD44325184BF5-E33-FQ1 operate with stopped clocks, and what is the recovery time?

Yes, UPD44325184BF5-E33-FQ1 supports clock-stop mode: when K/K# are halted, the device retains state and resumes normal operation within 20 μs after clock restart. During stop, C/C# and CQ/CQ# also halt, but output drivers remain in last state-not tristated-ensuring deterministic behavior in low-power states.

UPD44325184BF5-E33-FQ1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD44325184BF5-E33-FQ1 FAQ

1.How can I place an order for UPD44325184BF5-E33-FQ1 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD44325184BF5-E33-FQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD44325184BF5-E33-FQ1 reliable?

The price and inventory of UPD44325184BF5-E33-FQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD44325184BF5-E33-FQ1 is usually 5 days.

3.What payment methods are accepted for UPD44325184BF5-E33-FQ1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD44325184BF5-E33-FQ1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD44325184BF5-E33-FQ1?

UPD44325184BF5-E33-FQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD44325184BF5-E33-FQ1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD44325184BF5-E33-FQ1?

For technical support, including UPD44325184BF5-E33-FQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD44325184BF5-E33-FQ1 requirements.

6.How does Aetrix verify that UPD44325184BF5-E33-FQ1 is sourced from the original manufacturer or authorized distributors?

All UPD44325184BF5-E33-FQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD44325184BF5-E33-FQ1 meets industry standards.

7.What is the process for return or replacement of UPD44325184BF5-E33-FQ1?

All UPD44325184BF5-E33-FQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD44325184BF5-E33-FQ1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD44325184BF5-E33-FQ1 part is unused and in its original packaging.

Return procedure for UPD44325184BF5-E33-FQ1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

UPD44325184BF5-E33-FQ1 Tags

  • UPD44325184BF5-E33-FQ1
  • UPD44325184BF5-E33-FQ1 PDF
  • UPD44325184BF5-E33-FQ1 Datasheet
  • UPD44325184BF5-E33-FQ1 Specifications
  • UPD44325184BF5-E33-FQ1 Images
  • Renesas
  • Renesas UPD44325184BF5-E33-FQ1
  • Buy UPD44325184BF5-E33-FQ1
  • UPD44325184BF5-E33-FQ1 Price
  • UPD44325184BF5-E33-FQ1 Distributor
  • UPD44325184BF5-E33-FQ1 Supplier
  • UPD44325184BF5-E33-FQ1 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER