Renesas UPD44325184BF5-E40-FQ1

Overview

UPD44325184BF5-E40-FQ1 from Renesas Electronics is a 2,097,152-word × 18-bit synchronous Quad Data Rate II (QDR II) SRAM with 4-word burst operation, HSTL interface, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and is packaged in a 165-pin plastic BGA (15 × 17 mm) for high-density memory subsystems in networking switches and packet buffers.

For engineers reviewing the UPD44325184BF5-E40-FQ1 datasheet, UPD44325184BF5-E40-FQ1 pinout, UPD44325184BF5-E40-FQ1 application, or UPD44325184BF5-E40-FQ1 equivalent, key selection considerations include its dual-clock timing architecture (K/K# input, C/C# output), user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), and JTAG 1149.1 test access.

Technical Context

The UPD44325184BF5-E40-FQ1 implements a true dual-port QDR II architecture with physically separate read and write data paths, enabling simultaneous read and write transactions without bus contention. Its internal burst counter and synchronous peripheral logic register all address/control inputs on the rising edge of K and data on both K and K# edges.

It integrates a PLL for output data valid window extension and frequency scaling, uses HSTL Class I I/O with VREF = VDDQ/2 reference, and supports byte-write control via BW0# and BW1# signals - enabling selective 9-bit writes within the 18-bit data width.

Key Specifications

Pinout & Package

UPD44325184BF5-E40-FQ1 is housed in a 165-pin plastic ball grid array (BGA) package measuring 15 mm × 17 mm with 0.8 mm pitch. The package supports automated assembly and thermal dissipation suitable for high-speed memory modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2663KV18-400BZXC and AS7C3256A-15JIN, the UPD44325184BF5-E40-FQ1 uniquely balances 250 MHz performance, 1.8 V flexibility, and integrated impedance tuning - making it optimal for mid-tier networking gear where power, layout simplicity, and timing robustness are prioritized over peak frequency.

Availability

UPD44325184BF5-E40-FQ1 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch memory subsystems, and baseband processor L2 cache applications requiring stable component supply, long-term lifecycle assurance, and lead-free compliance.

Supply support for UPD44325184BF5-E40-FQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD44325184BF5-E40-FQ1 belongs to Renesas' QDR II SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in packet-switched infrastructure where deterministic burst access and concurrent read/write are mandatory.

FAQ

What is the memory organization and total density of the UPD44325184BF5-E40-FQ1?

The UPD44325184BF5-E40-FQ1 is organized as 2,097,152 words × 18 bits, delivering a total density of 36 Mbit. This configuration supports wide-data-path applications such as packet buffering and forwarding table storage while maintaining compatibility with standard 18-bit memory controllers. Its 4-word burst mode further optimizes bandwidth efficiency.

Does the UPD44325184BF5-E40-FQ1 support independent read and write operations?

Yes, the UPD44325184BF5-E40-FQ1 implements true dual-port QDR II architecture with physically separate read and write data paths. This allows concurrent read and write transactions without arbitration delay, achieving 100% bus utilization - a critical feature for real-time packet processing in networking silicon.

What are the voltage requirements for VDD and VDDQ on the UPD44325184BF5-E40-FQ1?

The UPD44325184BF5-E40-FQ1 requires VDD = 1.7–1.9 V (nominal 1.8 V) for core logic and VDDQ = 1.4 V to VDD for I/O buffers. VDDQ must never exceed VDD during operation or power sequencing. This split-rail design isolates noise-sensitive I/O from core logic, improving signal integrity at 250 MHz.

How does the ZQ pin function on the UPD44325184BF5-E40-FQ1?

The ZQ pin on the UPD44325184BF5-E40-FQ1 serves as an output impedance calibration input. When connected to a precision resistor to ground, it configures Q, CQ, and CQ# driver impedance to 0.2 × RQ - enabling programmable 35–70 Ω matching to PCB traces. Calibration occurs automatically every 20 μs after power-up to compensate for voltage/temperature drift.

Is the UPD44325184BF5-E40-FQ1 compatible with JTAG boundary-scan testing?

Yes, the UPD44325184BF5-E40-FQ1 integrates a fully compliant IEEE 1149.1 JTAG test access port (TAP) with TCK, TMS, TDI, and TDO pins operating at 1.8 V I/O levels. This enables in-system verification, interconnect testing, and debug without requiring additional test circuitry - streamlining production test and field diagnostics.