Renesas UPD44325184BF5-E40-FQ1-A

Overview

UPD44325184BF5-E40-FQ1-A from Renesas Electronics is a 2,097,152-word × 18-bit synchronous quad data rate (QDR II) SRAM with 4-word burst operation, 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (15 × 17) packaging. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and targets high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the UPD44325184BF5-E40-FQ1-A datasheet, UPD44325184BF5-E40-FQ1-A pinout, UPD44325184BF5-E40-FQ1-A application, or UPD44325184BF5-E40-FQ1-A equivalent, key selection criteria include its QDR II timing architecture, dual-clock (K/K# and C/C#) synchronization, user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), and JTAG 1149.1 test access.

Technical Context

This QDR II SRAM implements separate independent read and write data paths enabling true concurrent transactions. Its internal PLL provides a wide output data valid window and supports future frequency scaling up to 300 MHz, while DLL# input allows PLL bypass for low-frequency debug operation.

The device uses two-phase input clocks (K and K#) for address/control registration on K's rising edge and data registration on both K and K# rising edges. Output timing is referenced to either C/C# (for flight-time matching) or K/K# (if C/C# are tied HIGH), with echo clocks CQ/CQ# tightly aligned to output data edges.

Key Specifications

Pinout & Package

UPD44325184BF5-E40-FQ1-A is housed in a 165-pin plastic BGA package (15 × 17 mm grid, ball pitch 0.8 mm). Pin functions follow the μPD44325184B-specific arrangement documented on page 6 of R10DS0039EJ0200 Rev.2.00.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-400BZI and AS7C336256P-15JIN, UPD44325184BF5-E40-FQ1-A offers optimal balance of 250 MHz performance, QDR II timing flexibility, and commercial temperature support - making it ideal for cost-sensitive, high-throughput telecom and networking hardware where 400 MHz headroom is unnecessary.

Availability

UPD44325184BF5-E40-FQ1-A is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and baseband processing memory requiring stable component supply, long-term lifecycle assurance, and lead-free compliance.

Supply support for UPD44325184BF5-E40-FQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The μPD44325xxx series is designed specifically for high-bandwidth, low-latency packet buffering in networking and telecom infrastructure - emphasizing QDR II timing precision, concurrent access, and robust signal integrity at 250 MHz.

FAQ

What is the memory organization and total density of UPD44325184BF5-E40-FQ1-A?

UPD44325184BF5-E40-FQ1-A has a 2,097,152-word × 18-bit organization, totaling 36 Mbits (2 M × 18). This configuration is explicitly defined in the Ordering Information table on page 2 of R10DS0039EJ0200 Rev.2.00 and confirmed in the Description section on page 1. The part belongs to the μPD44325184B family variant optimized for 18-bit data width applications such as packet buffering and baseband processing.

Does UPD44325184BF5-E40-FQ1-A support concurrent read and write operations?

Yes, UPD44325184BF5-E40-FQ1-A supports true concurrent read and write operations through physically separate read and write data ports. As stated in the Features section (page 1), it includes "Separate independent read and write data ports with concurrent transactions." The block diagram on page 11 confirms distinct data registry paths for read and write, and the Bus Cycle State Diagram on page 16 shows independent state machines that can operate simultaneously - though initiation of new read/write cycles must be staggered per clock edge.

What are the power supply requirements for UPD44325184BF5-E40-FQ1-A?

UPD44325184BF5-E40-FQ1-A requires two supplies: VDD = 1.7–1.9 V (nominal 1.8 ± 0.1 V) for core logic, and VDDQ = 1.4–1.8 V (nominal 1.5 V, 1.8 V also permissible) for I/O buffers. These values are specified in the Recommended DC Operating Conditions table (page 17). VDDQ must not exceed VDD during operation, and the power-on sequence mandates applying VDD before VDDQ to prevent latch-up, as detailed on page 12.

How does the ZQ pin function in UPD44325184BF5-E40-FQ1-A?

The ZQ pin on UPD44325184BF5-E40-FQ1-A is an input used for output impedance calibration. It connects to an external resistor to ground (RQ), setting Q, CQ, and CQ# output impedance to 0.2 × RQ. Supported range is 175–350 Ω, yielding 35–70 Ω output impedance. Calibration occurs automatically every 20 μs after power-up to compensate for voltage/temperature drift, as described on page 9. ZQ must never be left floating or tied directly to GND or VDD.

Is UPD44325184BF5-E40-FQ1-A compatible with JTAG boundary-scan testing?

Yes, UPD44325184BF5-E40-FQ1-A includes a fully compliant IEEE 1149.1 JTAG test access port with TMS, TDI, TCK, and TDO pins operating at 1.8 V I/O level (page 9). The JTAG interface supports boundary-scan testing and diagnostics, and unused JTAG pins may be left unconnected except TCK, which must be tied to VSS if not used. This capability is confirmed in the Features list (page 1) and Pin Description table (page 8).